公开(公告)号：US20230369033A1

公开(公告)日：2023-11-16

申请号：US17983934

申请日：2022-11-09

Applicant: MKS Instruments, Inc.

Inventor： Keith K. Koai ,  Chenglong Yang ,  Guy Rosenzweig ,  Jimmy Liu ,  Michael Harris ,  James Blessing

IPC: H01J37/32 ,  G01N33/00

CPC classification number: H01J37/3299 ,  G01N33/0027 ,  H01J37/32449 ,  H01J2237/24585 ,  H01J37/32357

Abstract: An apparatus for feedback control in plasma processing systems using radical sensing, and a method for feedback control in plasma processing systems using radical sensing, the apparatus comprising at least one process gas supply system configured to output at least one process gas, at least one plasma source configured to receive the at least one process gas and generate at least one radical flow, at least one process chamber in communication with the at least one plasma source, wherein the process chamber receives the at least one radical flow and directs at least a portion of the at least one radical flow to one or more devices, the process chamber configured to output at least one process chamber output, at least one gas analyzer in communication with and configured to sample at least one of the at least one process gas, at least one radical flow, at least one radical flow within the at least one process chamber, and the at least one process chamber output, and at least one controller in communication with at least one of the process gas supply system, at least one plasma source, and at least one process chamber, the controller configured to generate at least one control signal based on data from the at least one gas analyzer and selectively control at least one of the process gas supply system, at least one plasma source, and at least one process chamber.