公开(公告)号：US20220005674A1

公开(公告)日：2022-01-06

申请号：US17480993

申请日：2021-09-21

Applicant: MKS Instruments, Inc. ,  LAM RESEARCH CORPORATION

Inventor： Aaron T. RADOMSKI ,  Benjamin J. GITLIN ,  Larry J. FISK, II ,  Mariusz OLDZIEJ ,  Aaron M. BURRY ,  Jonathan W. SMYKA ,  Alexei MARAKHTANOV ,  Bing JI ,  Felix Leib KOZAKEVICH ,  John HOLLAND ,  Ranadeep BHOWMICK

IPC: H01J37/32

Abstract: A radio frequency (RF) generator system includes first and second RF power sources, each RF power source applying a respective RF signal and second RF signal to a load. The first RF signal is applied in accordance with the application of the second RF signal. The application of the first RF signal is synchronized to application of the second RF signal. The first RF signal may be amplitude modulated in synchronization with the second RF signal, and the amplitude modulation can include blanking of the first RF signal. A frequency offset may be applied to the first RF signal in synchronization with the second RF signal. A variable actuator associated with the first RF power source may be controlled in accordance with the second RF signal.

公开(公告)号：US20150017809A1

公开(公告)日：2015-01-15

申请号：US13937930

申请日：2013-07-09

Applicant: Lam Research Corporation

Inventor： Ranadeep BHOWMICK ,  Eric A. HUDSON

IPC: H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/31144 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32139

Abstract: A method for etching features into an etch layer disposed below a patterned mask is provided. At least three cycles are provided, where each cycle comprises providing an ion bombardment, by creating a plasma, of the etch layer to create activated sites of surface radicals in parts of the etch layer exposed by the patterned mask, extinguishing the plasma, exposing the etch layer to a plurality of fluorocarbon containing molecules, which causes the fluorocarbon containing molecules to selectively bind to the activated sites, wherein the selective binding is self limiting, and providing an ion bombardment of the etch layer to initiate an etch reaction between the fluorocarbon containing molecule and the etch layer, wherein the ion bombardment of the etch layer to initiate an etch reaction causes the formation of volatile etch products formed from the etch layer and the fluorocarbon containing molecule.

Abstract translation: 提供了一种用于将特征蚀刻到设置在图案化掩模下方的蚀刻层中的方法。 提供至少三个循环，其中每个循环包括通过产生等离子体提供蚀刻层的离子轰击，以在被图案化掩模暴露的部分蚀刻层中产生表面自由基的活化位点，使等离子体暴露 蚀刻层到多个含碳氟化合物的分子，其使含碳氟化合物的分子选择性地结合到活化位点，其中选择性结合是自限性的，并且提供蚀刻层的离子轰击以引发含氟碳含量 分子和蚀刻层，其中蚀刻层的离子轰击以引发蚀刻反应导致形成由蚀刻层和含碳氟化合物分子形成的挥发性蚀刻产物。