公开(公告)号：US20030021014A1

公开(公告)日：2003-01-30

申请号：US09911420

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Barbara Foley Barenburg ,  Fred V. Richard

IPC: H01S003/00

CPC classification number: H01S5/4031 ,  H01S5/021 ,  H01S5/4056 ,  H01S5/50 ,  H01S2301/173

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. The compliant substrate includes an optical laser array configured as a linear optical amplifier.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 柔性衬底包括配置为线性光放大器的光学激光器阵列。

公开(公告)号：US20040150043A1

公开(公告)日：2004-08-05

申请号：US10356549

申请日：2003-02-03

Applicant: MOTOROLA, INC.

Inventor： Paige M. Holm ,  Barbara Foley Barenburg ,  Joyce K. Yamamoto ,  Fred V. Richard

IPC: H01L027/01

CPC classification number: H01L27/0605 ,  H01L21/8258

Abstract: High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy and epitaxial growth of single crystal silicon onto single crystal oxide materials. A microresonator device is formed overlying the monocrystalline substrate. Portions or an entirety of the microresonator device can also overly the accommodating buffer layer, or the monocrystalline material layer.

Abstract translation: 通过形成用于生长单晶层的顺应性衬底，可以将单晶材料（26）的高质量外延层生长成覆盖在单晶衬底（22）如大硅晶片上。 容纳缓冲层（24）包括通过氧化硅的非晶界面层（28）与硅晶片隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的单晶硅在单晶氧化物材料上的外延和外延生长。 在单晶衬底上形成微谐振器器件。 部分或整个微谐振器装置也可以过度地容纳缓冲层或单晶材料层。

公开(公告)号：US20030036217A1

公开(公告)日：2003-02-20

申请号：US09985757

申请日：2001-11-06

Applicant: MOTOROLA, INC.

Inventor： Fred V. Richard ,  Paige M. Holm

IPC: H01S005/00

CPC classification number: H01S5/021 ,  H01S5/0218 ,  H01S5/026 ,  H01S5/1032 ,  H01S5/1075 ,  H01S5/22

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The foregoing is utilized for a microcavity semiconductor laser coupled to a waveguide.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 实现顺应性衬底的形成的一种方式包括首先在硅晶片上生长容纳缓冲层。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 上述用于耦合到波导的微腔半导体激光器。