公开(公告)号：US20040150043A1

公开(公告)日：2004-08-05

申请号：US10356549

申请日：2003-02-03

Applicant: MOTOROLA, INC.

Inventor： Paige M. Holm ,  Barbara Foley Barenburg ,  Joyce K. Yamamoto ,  Fred V. Richard

IPC: H01L027/01

CPC classification number: H01L27/0605 ,  H01L21/8258

Abstract: High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy and epitaxial growth of single crystal silicon onto single crystal oxide materials. A microresonator device is formed overlying the monocrystalline substrate. Portions or an entirety of the microresonator device can also overly the accommodating buffer layer, or the monocrystalline material layer.

Abstract translation: 通过形成用于生长单晶层的顺应性衬底，可以将单晶材料（26）的高质量外延层生长成覆盖在单晶衬底（22）如大硅晶片上。 容纳缓冲层（24）包括通过氧化硅的非晶界面层（28）与硅晶片隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的单晶硅在单晶氧化物材料上的外延和外延生长。 在单晶衬底上形成微谐振器器件。 部分或整个微谐振器装置也可以过度地容纳缓冲层或单晶材料层。

公开(公告)号：US20030030062A1

公开(公告)日：2003-02-13

申请号：US09924481

申请日：2001-08-09

Applicant: MOTOROLA, INC.

Inventor： Paige M. Holm ,  Barbara Foley Barenburg ,  Fred Richard ,  Joyce Yamamoto

IPC: H01L027/15

CPC classification number: H01S5/026 ,  H01S5/0202 ,  H01S5/021 ,  H01S5/0261 ,  H01S2301/173

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. The foregoing is utilized for fabricating a laser cavity of a laser.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 上述用于制造激光器的激光腔。

公开(公告)号：US20030036217A1

公开(公告)日：2003-02-20

申请号：US09985757

申请日：2001-11-06

Applicant: MOTOROLA, INC.

Inventor： Fred V. Richard ,  Paige M. Holm

IPC: H01S005/00

CPC classification number: H01S5/021 ,  H01S5/0218 ,  H01S5/026 ,  H01S5/1032 ,  H01S5/1075 ,  H01S5/22

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The foregoing is utilized for a microcavity semiconductor laser coupled to a waveguide.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 实现顺应性衬底的形成的一种方式包括首先在硅晶片上生长容纳缓冲层。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 上述用于耦合到波导的微腔半导体激光器。

公开(公告)号：US20030035964A1

公开(公告)日：2003-02-20

申请号：US09930243

申请日：2001-08-16

Applicant: Motorola, Inc.

Inventor： Fred Richard ,  Paige M. Holm

IPC: B32B009/00 ,  H01S003/05

CPC classification number: H01S5/021 ,  H01S5/0218 ,  H01S5/026 ,  H01S5/1032 ,  H01S5/1075 ,  H01S5/22 ,  Y10T428/24942

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant-enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. The foregoing is utilized for a microcavity semiconductor laser.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 实现顺应性衬底的形成的一种方式包括首先在硅晶片上生长容纳缓冲层。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 上述用于微腔半导体激光器。

公开(公告)号：US20030020104A1

公开(公告)日：2003-01-30

申请号：US09911484

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Albert A. Talin ,  Alexander A. Demkov ,  Paige M. Holm

IPC: H01L031/0328 ,  H01L021/336 ,  H01L029/76

CPC classification number: H01L27/0688 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8221 ,  H01L21/8258 ,  H01L27/0605 ,  H01L2924/00011 ,  H01L2224/80001

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Dual gate field effect transistors exhibiting increased transconductance are fabricated using planar processing techniques.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 表现出增加的跨导的双栅场效应晶体管使用平面处理技术制造。

公开(公告)号：US20030017626A1

公开(公告)日：2003-01-23

申请号：US09909941

申请日：2001-07-23

Applicant: MOTOROLA INC.

Inventor： Lyndee L. Hilt ,  Jay A. Curless ,  Paige M. Holm

IPC: H01L021/00 ,  H01L021/336

CPC classification number: C30B25/18 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02658

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. The strain relief provided by the amorphous interface layer reduces the amount of defects, such as dislocations, occurring in the semiconductor structure and allows a higher crystalline quality to be obtained. The propagation of dislocations can further be controlled by applying a strain controlling element to the semiconductor structure. The strain controlling element may include a distorting material applied to the substrate and having a different thermal property than the substrate so that the distorting material can induce a strain in the semiconductor structure to compensate for strain induced in the semiconductor structure during its manufacture. The strain controlling element may also include a pattern growth for controlling the location of dislocations in the semiconductor structure.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 由非晶界面层提供的应变消除减少在半导体结构中发生的诸如位错的缺陷的量，并且允许获得更高的结晶质量。 通过向半导体结构施加应变控制元件可以进一步控制位错的传播。 应变控制元件可以包括施加到衬底上并且具有与衬底不同的热性能的变形材料，使得变形材料可以在半导体结构中引起应变以补偿在其制造期间在半导体结构中诱发的应变。 应变控制元件还可以包括用于控制半导体结构中位错位置的图案生长。

公开(公告)号：US20030016895A1

公开(公告)日：2003-01-23

申请号：US09909906

申请日：2001-07-23

Applicant: MOTOROLA, INC.

Inventor： Paige M. Holm ,  Kurt W. Eisenbeiser ,  Joyce Yamamoto

IPC: G02F001/035 ,  G02B006/10 ,  G02B006/12

CPC classification number: B82Y20/00 ,  G02B6/12004 ,  G02B6/1225 ,  G02B2006/12061 ,  G02B2006/12078 ,  G02B2006/12123 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0688

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Photonic crystal structures may be integrally provided with such semiconductor structures, which semiconductor structures may also include optically active devices and control circuitry.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 光子晶体结构可以与这种半导体结构一体地设置，该半导体结构还可以包括光学有源器件和控制电路。

公开(公告)号：US20030006470A1

公开(公告)日：2003-01-09

申请号：US09897968

申请日：2001-07-05

Applicant: MOTOROLA, INC.

Inventor： Steven James Franson ,  Daniel S. Marshall ,  Paige M. Holm ,  John E. Holmes ,  Bruce Allen Bosco ,  Rudy M. Emrick

IPC: H01L031/058

CPC classification number: H01L31/101 ,  H01L21/8258 ,  H01L23/38 ,  H01L27/0605 ,  H01L27/0688 ,  H01L27/15 ,  H01L27/16 ,  H01L31/1852 ,  H01L2924/0002 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/183 ,  Y02E10/544 ,  H01L2924/00

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A thermo-electric device is integrated into the semiconductor structure.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 半导体结构中集成有热电装置。