公开(公告)号：US6444569B2

公开(公告)日：2002-09-03

申请号：US83527601

申请日：2001-04-16

Applicant: MOTOROLA INC

Inventor： FARKAS JANOS ,  ANTHONY BRIAN G ,  GUVENILIR ABBAS ,  ISLAM MOHAMMED RABIUL ,  KOLAGUNTA VENKAT ,  MENDONCA JOHN ,  TIWARI RAJESH ,  VENKATESAN SURESH

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/768 ,  H01L21/4763

CPC classification number: H01L21/7684 ,  H01L21/02074 ,  H01L21/31053 ,  H01L21/3212

Abstract: A copper interconnect polishing process begins by polishing (17) a bulk thickness of copper (63) using a first platen. A second platen is then used to remove (19) a thin remaining interfacial copper layer to expose a barrier film (61). Computer control (21) monitors polish times of the first and second platen and adjusts these times to improve wafer throughput. One or more platens and/or the wafer is rinsed (20) between the interfacial copper polish and the barrier polish to reduce slurry cross contamination. A third platen and slurry is then used to polish away exposed portions of the barrier (61) to complete polishing of the copper interconnect structure. A holding tank that contains anti-corrosive fluid is used to queue the wafers until subsequent scrubbing operations (25). A scrubbing operation (25) that is substantially void of light is used to reduce photovoltaic induced corrosion of copper in the drying chamber of the scubber.

Abstract translation: 铜互连抛光工艺通过使用第一压板抛光（17）铜（63）的体积厚度开始。 然后使用第二压板来去除（19）薄的剩余界面铜层以暴露阻挡膜（61）。 计算机控制（21）监测第一和第二压板的抛光时间并调整这些时间以提高晶片的吞吐量。 一个或多个压板和/或晶片在界面铜抛光剂和阻隔抛光剂之间漂洗（20），以减少淤浆交叉污染。 然后使用第三压板和浆料抛光掉屏障（61）的暴露部分以完成铜互连结构的抛光。 使用含有防腐蚀液体的储存罐将晶片排队，直到后续的擦洗操作（25）。 使用基本上无光的擦洗操作（25）来减少在该干燥室中的铜的光伏感应腐蚀。