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公开(公告)号:US20230251305A1
公开(公告)日:2023-08-10
申请号:US17608632
申请日:2020-12-30
发明人: Teck Huat TAN , Chun Hong LOW
IPC分类号: G01R31/28
CPC分类号: G01R31/2867 , G01R31/2862 , G01R31/2863 , G01R31/287
摘要: The present disclosure relates to burn-in apparatus, transfer method, burn-in chamber, and interchangeable frame thereof for semiconductor devices burn-in process. The burn-in apparatus comprises of a burn-in chamber with an incomplete base which is adapted to be completed and thermally insulated in cooperation with a thermal insulation base of at least one interchangeable frame which is adapted to be removably moved into and docked in the burn-in chamber to complete the burn-in apparatus. The burn-in apparatus comprises the burn-in chamber and at least one frame. The apparatus is complete and thermally insulated when the frame is moved into the burn-in chamber and docked therein. The apparatus is incomplete and thermally uninsulated when the frame is moved out of the burn-in chamber and undocked therefrom.