公开(公告)号：US09748332B1

公开(公告)日：2017-08-29

申请号：US15374515

申请日：2016-12-09

Applicant: Macronix International Co., Ltd.

Inventor： Chih Kai Yang ,  Chen Yu Cheng ,  Shih Chin Lee ,  Ching Hung Wang ,  Tzung-Ting Han

IPC: H01L27/115 ,  H01L29/06 ,  H01L29/788 ,  H01L29/66 ,  H01L27/11521

CPC classification number: H01L29/0649 ,  H01L21/7682 ,  H01L27/11524 ,  H01L29/7883

Abstract: A semiconductor device includes a semiconductor substrate, multiple memory cells on the semiconductor substrate arranged along a first dimension and along a second dimension that is orthogonal to the first dimension, in which each memory cell of the multiple memory cells includes a channel region in the semiconductor substrate, a tunnel dielectric layer on the channel region, and a first electrode layer on the tunnel dielectric layer. Along the first dimension, the channel region of each memory cell of the multiple memory cells is separated from the channel region of an adjacent memory cell of the multiple memory cells by a corresponding first air gap, each first air gap extending from below an upper surface of the semiconductor substrate up to an inter-electrode dielectric layer.