公开(公告)号：US09460928B2

公开(公告)日：2016-10-04

申请号：US14612359

申请日：2015-02-03

Applicant: Macronix International Co., Ltd.

Inventor： Chen-Han Chou ,  I-Chen Yang ,  Yao-Wen Chang ,  Tao-Cheng Lu

IPC: H01L21/70 ,  H01L21/265 ,  H01L21/66 ,  H01L29/167 ,  H01L27/115 ,  H01L21/8232

CPC classification number: H01L21/26586 ,  H01L21/8232 ,  H01L22/12 ,  H01L22/20 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/66825 ,  H01L29/66833

Abstract: A semiconductor device manufacturing method includes preparing a wafer having projections formed on a substrate. The projections project upward from a surface of the substrate and have a height measured from the surface of the substrate. The method further includes determining an interval distribution representing a distribution of intervals between neighboring projections and calculating an implantation angle based on the height and the interval distribution. The implantation angle is an angle between a normal direction of the substrate and an implantation direction. The method also includes implanting ions at the calculated implantation angle.

Abstract translation: 半导体器件制造方法包括制备具有形成在基板上的突起的晶片。 所述突出部从所述基板的表面向上突出，并且具有从所述基板的表面测量的高度。 该方法还包括确定表示相邻投影之间的间隔的分布的间隔分布，并基于高度和间隔分布计算植入角度。 注入角度是基板的法线方向与注入方向之间的角度。 该方法还包括以所计算的植入角度注入离子。