公开(公告)号：US20160020216A1

公开(公告)日：2016-01-21

申请号：US14333893

申请日：2014-07-17

Applicant: Macronix International Co., Ltd.

Inventor： Shang-Wei Lin ,  Yu-Wei Hsu ,  Yu-Min Hung ,  Tzung-Ting Han

IPC: H01L27/115 ,  H01L21/28

CPC classification number: H01L27/11521 ,  H01L29/40114 ,  H01L29/42324 ,  H01L29/66825

Abstract: A memory device is provided having a plurality of floating gates and control gates, which at least one control gate has been removed after applying a flowable material to the semiconductor which prevents damage to the substrate when the control gate is removed. Methods of manufacturing such a memory device are also provided.

Abstract translation: 提供具有多个浮动栅极和控制栅极的存储器件，在将可流动材料施加到半导体之后，至少一个控制栅极被去除，这防止了在控制栅极被去除时损坏衬底。 还提供了制造这种存储器件的方法。