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1.发明申请公开(公告)号：US20100175043A1
公开(公告)日：2010-07-08
申请号：US12349108
申请日：2009-01-06
IPC分类号： G06F17/50
摘要： A method is provided for modeling lithographic processes in the design of photomasks for the manufacture of semiconductor integrated circuits, and more particularly for simulating intermediate range flare effects. For a region of influence (ROI) from first ROI1 of about 5λ/NA to distance ROI2 when the point spread function has a slope that is slowly varying according to a predetermined criterion, then mask shapes at least within the distance range from ROI1 to ROI2 are smoothed prior to computing the SOCS convolutions. The method provides a fast method for simulating intermediate range flare effects with sufficient accuracy.
摘要翻译： 提供了一种用于在用于制造半导体集成电路的光掩模的设计中对光刻工艺进行建模的方法，更具体地说，用于模拟中间范围闪光效应。 对于当点扩散函数具有根据预定标准缓慢变化的斜率时，从约5λ/ NA的第一ROI1到距离ROI2的影响区域（ROI），则至少在从ROI1到ROI2的距离范围内的掩模形状 在计算SOCS卷积之前进行平滑处理。 该方法提供了一种用于以足够的精度模拟中等范围闪光效果的快速方法。
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2.发明授权Methodology and system for determining numerical errors in pixel-based imaging simulation in designing lithographic masks 有权在设计光刻掩模时，基于像素的成像仿真中确定数值误差的方法和系统公开(公告)号：US07975244B2
公开(公告)日：2011-07-05
申请号：US12019125
申请日：2008-01-24
IPC分类号： G06F17/50
摘要： A method is provided for designing a mask that includes the use of a pixel-based simulation of a lithographic process model, in which test structures are designed for determining numerical and discretization errors associated with the pixel grid as opposed to other model inaccuracies. The test structure has a plurality of rows of the same sequence of features, but each row is offset from other rows along an x-direction by a multiple of a minimum step size, such as used in modifying masks during optical proximity correction. The images for each row are simulated with a lithographic model that uses the selected pixel-grid size and the differences between row images are compared. If the differences between rows exceed or violate a predetermined criterion, the pixel grid size may be modified to minimize discretization and/or numerical errors due to the choice of pixel grid size.
摘要翻译： 提供了一种用于设计包括使用光刻处理模型的基于像素的仿真的掩模的方法，其中测试结构被设计用于确定与像素网格相关的数值和离散化误差，而不是其他模型不准确。 测试结构具有相同序列特征的多行，但是每一行都沿着x方向与其他行偏移最小步长的倍数，例如在光学邻近校正期间用于修改掩模。 使用所选择的像素网格大小的光刻模型来模拟每行的图像，并比较行图像之间的差异。 如果行之间的差异超过或违反预定标准，则可以修改像素网格大小以使由于像素网格大小的选择而导致的离散化和/或数值误差最小化。
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公开(公告)号：US08161422B2
公开(公告)日：2012-04-17
申请号：US12349108
申请日：2009-01-06
IPC分类号： G06F17/50
摘要： A method is provided for modeling lithographic processes in the design of photomasks for the manufacture of semiconductor integrated circuits, and more particularly for simulating intermediate range flare effects. For a region of influence (ROI) from first ROI1 of about 5λ/NA to distance ROI2 when the point spread function has a slope that is slowly varying according to a predetermined criterion, then mask shapes at least within the distance range from ROI1 to ROI2 are smoothed prior to computing the SOCS convolutions. The method provides a fast method for simulating intermediate range flare effects with sufficient accuracy.
摘要翻译： 提供了一种用于在用于制造半导体集成电路的光掩模的设计中对光刻工艺进行建模的方法，更具体地说，用于模拟中间范围闪光效应。 对于当点扩散函数具有根据预定标准缓慢变化的斜率时，从约5λ/ NA的第一ROI1到距离ROI2的影响区域（ROI），则至少在从ROI1到ROI2的距离范围内的掩模形状 在计算SOCS卷积之前进行平滑处理。 该方法提供了一种用于以足够的精度模拟中等范围闪光效果的快速方法。
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4.发明申请METHODOLOGY AND SYSTEM FOR DETERMINING NUMERICAL ERRORS IN PIXEL-BASED IMAGING SIMULATION IN DESIGNING LITHOGRAPHIC MASKS 有权用于确定基于像素的成像模拟中的数值误差的方法和系统设计LITHOGRAPHIC MASKS公开(公告)号：US20090193387A1
公开(公告)日：2009-07-30
申请号：US12019125
申请日：2008-01-24
IPC分类号： G06F17/50
摘要： A method is provided for designing a mask that includes the use of a pixel-based simulation of a lithographic process model, in which test structures are designed for determining numerical and discretization errors associated with the pixel grid as opposed to other model inaccuracies. The test structure has a plurality of rows of the same sequence of features, but each row is offset from other rows along an x-direction by a multiple of a minimum step size, such as used in modifying masks during optical proximity correction. The images for each row are simulated with a lithographic model that uses the selected pixel-grid size and the differences between row images are compared. If the differences between rows exceed or violate a predetermined criterion, the pixel grid size may be modified to minimize discretization and/or numerical errors due to the choice of pixel grid size.
摘要翻译： 提供了一种用于设计包括使用光刻处理模型的基于像素的仿真的掩模的方法，其中测试结构被设计用于确定与像素网格相关的数值和离散化误差，而不是其他模型不准确。 测试结构具有相同序列特征的多行，但是每一行都沿x方向与其他行偏移最小步长的倍数，例如在光学邻近校正期间用于修改掩模。 使用所选择的像素网格大小的光刻模型来模拟每行的图像，并比较行图像之间的差异。 如果行之间的差异超过或违反预定标准，则可以修改像素网格大小以使由于像素网格大小的选择而导致的离散化和/或数值误差最小化。
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5.发明授权Performance in model-based OPC engine utilizing efficient polygon pinning method 失效在基于模型的OPC引擎中使用高效多边形钉扎方法的性能公开(公告)号：US07761839B2
公开(公告)日：2010-07-20
申请号：US11874274
申请日：2007-10-18
申请人： Gregg M. Gallatin , Emanuel Gofman , Kafai Lai , Mark A. Lavin , Maharaj Mukherjee , Dov Ramm , Alan E. Rosenbluth , Shlomo Shlafman
发明人： Gregg M. Gallatin , Emanuel Gofman , Kafai Lai , Mark A. Lavin , Maharaj Mukherjee , Dov Ramm , Alan E. Rosenbluth , Shlomo Shlafman
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： Methods, and a program storage device for executing such methods, for performing model-based optical proximity correction by providing a mask matrix having a region of interest (ROI) and locating a plurality of points of interest within the mask matrix. A first polygon having a number of vertices representative of the located points of interest is computed, followed by determining a spatial relation between its vertices and the ROI. The vertices of the first polygon are then pinned to boundaries of and within the ROI such that a second polygon is formed on the ROI. The process is repeated for all vertices of the first polygon such that the second polygon is collapsed onto the ROI. This collapsed second polygon is then used to correct for optical proximity.
摘要翻译： 方法和用于执行这种方法的程序存储装置，用于通过提供具有感兴趣区域（ROI）的掩模矩阵并且在掩模矩阵内定位多个感兴趣点来执行基于模型的光学邻近校正。 计算具有代表所述定位的兴趣点的顶点数的第一多边形，然后确定其顶点和ROI之间的空间关系。 然后将第一多边形的顶点固定在ROI的边界和内部，使得在ROI上形成第二多边形。 对第一多边形的所有顶点重复该过程，使得第二多边形折叠到ROI上。 然后使用这个折叠的第二个多边形来校正光学接近度。
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公开(公告)号：US07512927B2
公开(公告)日：2009-03-31
申请号：US11555854
申请日：2006-11-02
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A fast method of verifying a lithographic mask design is provided wherein catastrophic errors are identified by iteratively simulating and verifying images for the mask layout using progressively more accurate image models, including optical and resist models. Progressively accurate optical models include SOCS kernels that provide successively less influence. Corresponding resist models are constructed that may include only SOCS kernel terms corresponding to the optical model, or may include image trait terms of varying influence ranges. Errors associated with excessive light, such as bridging, side-lobe or SRAF printing errors, are preferably identified with bright field simulations, while errors associated with insufficient light, such as necking or line-end shortening overlay errors, are preferably identified with dark field simulations.
摘要翻译： 提供了一种验证光刻掩模设计的快速方法，其中通过使用逐渐更精确的图像模型（包括光学和抗蚀剂模型）迭代地模拟和验证用于掩模布局的图像来识别灾难性错误。 逐步准确的光学模型包括提供连续影响较小的SOCS内核。 构造相应的抗蚀剂模型，其可以仅包括对应于光学模型的SOCS核项，或者可以包括不同影响范围的图像特征项。 优选用亮场模拟来识别与过多光线相关的错误，例如桥接，旁瓣或SRAF打印错误，而与光线不足相关的错误，例如颈缩或线端缩短覆盖误差，优选地用暗场 模拟。
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7.发明授权Method and system for obtaining bounds on process parameters for OPC-verification 有权用于获取OPC验证过程参数界限的方法和系统公开(公告)号：US08059884B2
公开(公告)日：2011-11-15
申请号：US11937073
申请日：2007-11-08
IPC分类号： G06K9/20
CPC分类号： G06K9/036 , G03F7/70441
摘要： Embodiments of the present invention provide a method of performing printability verification of a mask layout. The method includes creating one or more tight clusters; computing a set of process parameters associated with a point on said mask; comparing said set of process parameters to said one or more tight clusters; and reporting an error when at least one of said process parameters is away from said one or more tight clusters.
摘要翻译： 本发明的实施例提供了一种执行掩模布局的可印刷性验证的方法。 该方法包括创建一个或多个紧密簇; 计算与所述掩模上的点相关联的一组过程参数; 将所述一组过程参数与所述一个或多个紧密簇进行比较; 并且当至少一个所述过程参数远离所述一个或多个紧密簇时报告错误。
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公开(公告)号：US20080127027A1
公开(公告)日：2008-05-29
申请号：US11555854
申请日：2006-11-02
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A fast method of verifying a lithographic mask design is provided wherein catastrophic errors are identified by iteratively simulating and verifying images for the mask layout using progressively more accurate image models, including optical and resist models. Progressively accurate optical models include SOCS kernels that provide successively less influence. Corresponding resist models are constructed that may include only SOCS kernel terms corresponding to the optical model, or may include image trait terms of varying influence ranges. Errors associated with excessive light, such as bridging, side-lobe or SRAF printing errors, are preferably identified with bright field simulations, while errors associated with insufficient light, such as necking or line-end shortening overlay errors, are preferably identified with dark field simulations.
摘要翻译： 提供了一种验证光刻掩模设计的快速方法，其中通过使用逐渐更精确的图像模型（包括光学和抗蚀剂模型）迭代地模拟和验证用于掩模布局的图像来识别灾难性错误。 逐步准确的光学模型包括提供连续影响较小的SOCS内核。 构造相应的抗蚀剂模型，其可以仅包括对应于光学模型的SOCS核项，或者可以包括不同影响范围的图像特征项。 优选用亮场模拟来识别与过多光线相关的错误，例如桥接，旁瓣或SRAF打印错误，而与光线不足相关的错误，例如颈缩或线端缩短覆盖误差，优选地用暗场 模拟。
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9.发明授权Incorporation of a phase map into fast model-based optical proximity correction simulation kernels to account for near and mid-range flare 有权将相位图并入基于快速模型的光学邻近校正模拟内核，以解决近距离和中等范围的闪光公开(公告)号：US07343271B2
公开(公告)日：2008-03-11
申请号：US10694465
申请日：2003-10-27
申请人： Gregg M. Gallatin , Emanuel Gofman , Kafai Lai , Mark A. Lavin , Maharaj Mukherjee , Dov Ramm , Alan E. Rosenbluth , Shlomo Shlafman
发明人： Gregg M. Gallatin , Emanuel Gofman , Kafai Lai , Mark A. Lavin , Maharaj Mukherjee , Dov Ramm , Alan E. Rosenbluth , Shlomo Shlafman
CPC分类号： G03F7/70441 , G03F1/36 , G03F1/70 , G03F7/705
摘要： A first method to compute a phase map within an optical proximity correction simulation kernel utilizes simulated wavefront information from randomly generated data. A second method uses measured data from optical tools. A phase map is created by analytically embedding a randomly generated two-dimensional array of complex numbers of wavefront information, and performing an inverse Fourier Transform on the resultant array. A filtering function requires the amplitude of each element of the array to be multiplied by a Gaussian function. A power law is then applied to the array. The elements of the array are shuffled, and converted from the phasor form to real/imaginary form. A two-dimensional Fast Fourier Transform is applied. The array is then unshuffled, and converted back to phasor form.
摘要翻译： 计算光学邻近校正模拟核心内的相位图的第一种方法利用来自随机产生的数据的模拟波阵面信息。 第二种方法使用来自光学工具的测量数据。 通过分析地嵌入复数数目的波阵面信息的随机生成的二维阵列并在所得到的阵列上执行逆傅里叶变换来创建相位图。 滤波函数要求阵列的每个元素的幅度乘以高斯函数。 然后将幂律应用于阵列。 数组的元素被洗牌，并从相量形式转换为实数/虚数形式。 应用二维快速傅立叶变换。 然后数组被清洗，并转换回到相量形式。
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公开(公告)号：US08073288B2
公开(公告)日：2011-12-06
申请号：US12015084
申请日：2008-01-16
IPC分类号： G06K9/20
摘要： A method, system and computer program product for rendering a mask are disclosed. A method of rendering a mask may comprise: providing an initial mask design for a photolithographic process, the initial mask design including polygons; initially rendering the initial mask design as a coarse mask representation in a pixel based image calculation; identifying an overhang portion; and rendering the overhang portion using a set of subpixels whose artifacts from spatial-localization lie outside a practical resolution of a pseudo lens having a numerical aperture larger than that of a projection lens used in the photolithographic process; and updating the initial rendering based on the overhang portion rendering.
摘要翻译： 公开了一种用于渲染掩模的方法，系统和计算机程序产品。 渲染掩模的方法可以包括：提供用于光刻工艺的初始掩模设计，初始掩模设计包括多边形; 最初在基于像素的图像计算中将初始掩模设计呈现为粗糙掩模表示; 识别突出部分; 并且使用一组子空间渲染悬伸部分，其中来自空间定位的伪像位于具有大于在光刻工艺中使用的投影透镜的数值孔径的假透镜的实际分辨率之外; 并基于突出部分呈现来更新初始呈现。
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