公开(公告)号：US20130087828A1

公开(公告)日：2013-04-11

申请号：US13805252

申请日：2010-06-21

申请人： Makoto Koshimizu ,  Hideki Niwayama ,  Kazuyuki Umezu ,  Hiroki Soeda ,  Atsushi Tachigami ,  Takeshi Iijima

发明人： Makoto Koshimizu ,  Hideki Niwayama ,  Kazuyuki Umezu ,  Hiroki Soeda ,  Atsushi Tachigami ,  Takeshi Iijima

IPC分类号： H01L29/06 ,  H01L21/762

CPC分类号： H01L29/0649 ,  H01L21/76205 ,  H01L21/76224 ,  H01L21/82385 ,  H01L21/823857 ,  H01L21/823878 ,  H01L27/0922 ,  H01L29/0638 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/41758 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7835

摘要： A terrace insulating film (SL) to be overridden by a gate electrode (G) of an nLDMOS device is configured by LOCOS, and a device isolation portion (SS) is configured by STI. Furthermore, on an outermost periphery of an active region where a plurality of nLDMOS devices are formed, a guard ring having the same potential as that of a drain region (D) is provided. And, via this guard ring, the device isolation portion (SS) is formed in a periphery of the active region, thereby not connecting but isolating the terrace insulating film (SL) and the device isolation portion (SS) from each other.

摘要翻译： 要由nLDMOS器件的栅电极（G）覆盖的平台绝缘膜（SL）由LOCOS构成，器件隔离部分（SS）由STI构成。 此外，在形成有多个nLDMOS器件的有源区的最外周设置有与漏区（D）具有相同电位的保护环。 并且，通过该保护环，在有源区域的周围形成有器件隔离部（SS），由此不使绝缘膜（SL）与器件隔离部（SS）隔离。