摘要:
Provided is a structure for housing an electrical junction box in a housing box by inserting the electrical junction box into the housing box from above and also for fixing the electrical junction box to the housing box so as to prevent slipping-off thereof by engagement between engagement parts provided on external side surfaces of the electrical junction box and engagement parts provided on internal side surfaces of the housing box, both of which face each other in parallel with an insertion direction in insertion of the electrical junction box. Moreover, groove-like depressions extended along the insertion direction into the housing box are provided in the external side surfaces of the electrical junction box, and engagement convex parts are provided in the depressions. Furthermore, engagement projections engaged with the engagement convex parts are provided on the internal side surfaces of the housing box. As depressions behind the engagement convex parts in the insertion direction, die-releasing holes for injection molding for forming locking parts of the electrical junction box are used.
摘要:
A box includes a first cover, a second cover, and an interior component housed in an internal space formed when the first cover and second cover are fit to each other. The first cover and the second cover have engaging mechanisms which engage the one end of the first cover to the one end of the second cover, and have retaining mechanisms which retain the other end of the first cover to the other end of the second cover. The first cover and the second cover are fit to each other in a normal state in a case that the engaging mechanisms are engaged with each other in a state where the retaining mechanisms are normally retained to each other. A projection is provided on at least one of the one end of the first cover and the one end of the second cover. When an engagement between the engaging mechanisms is in an abnormal state, the projection abuts against at least the other of the one end of the first cover and the one end of the second cover so that a gap between the one end of the first cover and the one end of the second cover is assured and the interior component housed in the internal space can be seen through the gap.
摘要:
A semiconductor device has a semiconductor substrate, a multi-layered wiring construction formed over the semiconductor device, and a metal-insulator-metal (MIM) capacitor arrangement established in the multi-layered wiring construction. The MIM capacitor arrangement includes first, second, third, fourth, fifth, and sixth electrode structures, which are arranged in order in parallel with each other at regular intervals. The first, second, fifth and sixth electrode structures are electrically connected to each other so as to define a first capacitor, and the third and fourth electrode structures are electrically connected to each other so as to define a second capacitor.
摘要:
A lower interconnection is provided on a semiconductor substrate. A MIM capacitive element is provided on a first interlayer insulation film in which the lower interconnection is buried, and includes a lower electrode, an upper electrode, and a dielectric film sandwiched therebetween. An upper interconnection is provided on a second interlayer insulation film in which the MIM capacitive element is buried. A contact electrically connects the lower electrode and the upper interconnection. The lower electrode is mainly formed of Al, so that they are lower in electrical resistance than barrier metal, and also low in stress value. Therefore, it becomes possible to widen the area of the lower electrode for electrically connecting the contact while restraining their influences on charge accumulation and close contact between the lower electrode and the insulation film. In addition, since the electrical resistance is lowered, the thickness of the lower electrode can be increased. Accordingly, the MIM capacitive element with a large capacitance can be manufactured with a high yield.
摘要:
A semiconductor device has a semiconductor substrate, a multi-layered wiring construction formed over the semiconductor device, and a metal-insulator-metal (MIM) capacitor arrangement established in the multi-layered wiring construction. The MIM capacitor arrangement includes first, second, third, fourth, fifth, and sixth electrode structures, which are arranged in order in parallel with each other at regular intervals. The first, second, fifth and sixth electrode structures are electrically connected to each other so as to define a first capacitor, and the third and fourth electrode structures are electrically connected to each other so as to define a second capacitor.
摘要:
A box for accommodating an electric connection box is provided. The box includes a lower cover which comprises a plurality of walls for surrounding a space to accommodate the electric connection box toward a predetermined insertion direction, and an upper cover. The plurality of walls includes: a first wall which extends along the insertion direction; second and third walls which extend from the first wall in a direction intersecting the insertion direction and faces each other; a fourth wall which extends from the first, second and third walls at a deep side of the insertion direction so as to support the electric connection box; and a fifth wall which extends from the second and third walls along the insertion direction, and is substantially parallel to the first wall so as to press-sandwich the electric connection box by the first and fifth walls.
摘要:
An electric distribution box includes a resin exterior cover which houses an interior component and has an opening for resin-molding the exterior cover on a bottom wall of the exterior cover, and a resin cap which is fit into the opening to close the opening. A flange formed on an outer periphery of the resin cap is kept in intimate contact with the bottom wall of the exterior cover. A molding hole for forming a locking piece by resin molding is provided on the flange. The locking piece locks the resin cap to the opening of the exterior cover. A swell is formed at an entire peripheral edge of the molding hole of the resin cap. An outer face of the interior component is kept in intimate contact with the swell so that the molding hole of the resin cap is closed by the outer face of the interior component and the flange is kept in intimate contact with the bottom wall of the exterior cover.