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公开(公告)号：US08686505B2
公开(公告)日：2014-04-01
申请号：US13560109
申请日：2012-07-27
IPC分类号： H01L29/06 , H01L29/78 , H01L21/301 , H01L21/335
CPC分类号： H01L29/7816 , H01L29/063 , H01L29/0653 , H01L29/0878 , H01L29/1095 , H01L29/66681
摘要： A method produces a semiconductor device including a semiconductor body, an electrode thereon, and an insulating structure insulating the electrode from the semiconductor body. The semiconductor body includes a first contact region of a first conductivity type, a body region of a second conductivity type, a drift region of the first conductivity type, and a second contact region having a higher maximum doping concentration than the drift region. The insulating structure includes a gate dielectric portion forming a first horizontal interface. with the drift region and has a first maximum vertical extension A field dielectric portion forms with the drift region second and third horizontal interfaces arranged below the main surface. A second maximum vertical extension of the field dielectric portion is larger than the first maximum vertical extension. A third maximum vertical extension of the field dielectric portion is larger than the second maximum vertical extension.
摘要翻译： 一种方法产生半导体器件，其包括半导体本体，其上的电极以及将电极与半导体本体绝缘的绝缘结构。 半导体本体包括第一导电类型的第一接触区域，第二导电类型的体区域，第一导电类型的漂移区域和具有比漂移区域更高的最大掺杂浓度的第二接触区域。 绝缘结构包括形成第一水平界面的栅介质部分。 具有漂移区域并且具有第一最大垂直延伸部A场介电部分形成，漂移区域布置在主表面下方的第二和第三水平界面。 场介电部分的第二最大垂直延伸大于第一最大垂直延伸。 场电介质部分的第三最大垂直延伸大于第二最大垂直延伸。
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公开(公告)号：US20140027848A1
公开(公告)日：2014-01-30
申请号：US13560109
申请日：2012-07-27
CPC分类号： H01L29/7816 , H01L29/063 , H01L29/0653 , H01L29/0878 , H01L29/1095 , H01L29/66681
摘要： A method produces a semiconductor device including a semiconductor body, an electrode thereon, and an insulating structure insulating the electrode from the semiconductor body. The semiconductor body includes a first contact region of a first conductivity type, a body region of a second conductivity type, a drift region of the first conductivity type, and a second contact region having a higher maximum doping concentration than the drift region. The insulating structure includes a gate dielectric portion forming a first horizontal interface. with the drift region and has a first maximum vertical extension A field dielectric portion forms with the drift region second and third horizontal interfaces arranged below the main surface. A second maximum vertical extension of the field dielectric portion is larger than the first maximum vertical extension. A third maximum vertical extension of the field dielectric portion is larger than the second maximum vertical extension.
摘要翻译： 一种方法产生半导体器件，其包括半导体本体，其上的电极以及将电极与半导体本体绝缘的绝缘结构。 半导体本体包括第一导电类型的第一接触区域，第二导电类型的体区域，第一导电类型的漂移区域和具有比漂移区域更高的最大掺杂浓度的第二接触区域。 绝缘结构包括形成第一水平界面的栅介质部分。 具有漂移区域并且具有第一最大垂直延伸部A场介电部分形成，漂移区域布置在主表面下方的第二和第三水平界面。 场介电部分的第二最大垂直延伸大于第一最大垂直延伸。 场电介质部分的第三最大垂直延伸大于第二最大垂直延伸。
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