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公开(公告)号：US07554157B2
公开(公告)日：2009-06-30
申请号：US11527760
申请日：2006-09-26
申请人： Uwe Wahl , Ralf Rudolf , Dirk Priefert
发明人： Uwe Wahl , Ralf Rudolf , Dirk Priefert
CPC分类号： H01L29/78624 , H01L29/0623 , H01L29/0692 , H01L29/0878 , H01L29/402 , H01L29/404 , H01L29/407 , H01L29/7803 , H01L29/7808 , H01L29/7818 , H01L29/7824 , H01L29/78639 , H01L29/861
摘要： An SOI semiconductor component comprises a semiconductor substrate having a basic doping, a dielectric layer arranged on the semiconductor substrate, and a semiconductor layer arranged on the dielectric layer. The semiconductor layer includes a drift zone of a first conduction type, a junction between the drift zone and a further component zone which is configured in such a way that a space charge zone is formed in the drift zone when a reverse voltage is applied to the junction, and a terminal zone adjacent to the drift zone. A first terminal electrode is connected to the further component zone, and a second terminal electrode is connected to the terminal zone. In the semiconductor substrate a first semiconductor zone is doped complementarily with respect to a basic doping of the semiconductor substrate, and the first terminal electrode is connected to the first semiconductor zone. A rectifier element is connected between the first terminal electrode and the first semiconductor zone.
摘要翻译： SOI半导体部件包括具有基本掺杂的半导体衬底，布置在半导体衬底上的电介质层和布置在电介质层上的半导体层。 半导体层包括第一导电类型的漂移区域，漂移区域和另一组件区域之间的结，该区域构造成使得当反向电压施加到漂移区域时在漂移区域中形成空间电荷区域 结和与漂移区相邻的终端区。 第一端子电极连接到另一组件区域，并且第二端子电极连接到端子区域。 在半导体衬底中，第一半导体区相对于半导体衬底的基本掺杂互补地掺杂，并且第一端电极连接到第一半导体区。 整流元件连接在第一端子电极和第一半导体区域之间。
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公开(公告)号：US20070075367A1
公开(公告)日：2007-04-05
申请号：US11462161
申请日：2006-08-03
申请人： Remigiusz Boguszewics , Ralf Rudolf
发明人： Remigiusz Boguszewics , Ralf Rudolf
CPC分类号： H01L29/78606 , H01L29/0619 , H01L29/404 , H01L29/407 , H01L29/7824 , H01L29/78603 , H01L29/78624 , H01L29/78648 , H01L2924/0002 , H01L2924/00
摘要： An SOI semi-conductor element has field electrodes and/or field zones which are arranged between a first and a second semi-conductor zone. Electric coupling is possible between the field electrodes and the field zones.
摘要翻译： SOI半导体元件具有设置在第一和第二半导体区之间的场电极和/或场区。 在场电极和场区之间可以进行电耦合。
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公开(公告)号：US20070080395A1
公开(公告)日：2007-04-12
申请号：US11527760
申请日：2006-09-26
申请人： Uwe Wahl , Ralf Rudolf , Dirk Priefert
发明人： Uwe Wahl , Ralf Rudolf , Dirk Priefert
IPC分类号： H01L29/76
CPC分类号： H01L29/78624 , H01L29/0623 , H01L29/0692 , H01L29/0878 , H01L29/402 , H01L29/404 , H01L29/407 , H01L29/7803 , H01L29/7808 , H01L29/7818 , H01L29/7824 , H01L29/78639 , H01L29/861
摘要： An SOI semiconductor component comprises a semiconductor substrate having a basic doping, a dielectric layer arranged on the semiconductor substrate, and a semiconductor layer arranged on the dielectric layer. The semiconductor layer includes a drift zone of a first conduction type, a junction between the drift zone and a further component zone which is configured in such a way that a space charge zone is formed in the drift zone when a reverse voltage is applied to the junction, and a terminal zone adjacent to the drift zone. A first terminal electrode is connected to the further component zone, and a second terminal electrode is connected to the terminal zone. In the semiconductor substrate a first semiconductor zone is doped complementarily with respect to a basic doping of the semiconductor substrate, and the first terminal electrode is connected to the first semiconductor zone. A rectifier element is connected between the first terminal electrode and the first semiconductor zone.
摘要翻译： SOI半导体部件包括具有基本掺杂的半导体衬底，布置在半导体衬底上的电介质层和布置在电介质层上的半导体层。 半导体层包括第一导电类型的漂移区域，漂移区域和另一组件区域之间的结，该区域构造成使得当反向电压施加到漂移区域时在漂移区域中形成空间电荷区域 结和与漂移区相邻的终端区。 第一端子电极连接到另一组件区域，并且第二端子电极连接到端子区域。 在半导体衬底中，第一半导体区相对于半导体衬底的基本掺杂互补地掺杂，并且第一端电极连接到第一半导体区。 整流元件连接在第一端子电极和第一半导体区域之间。
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公开(公告)号：US08686505B2
公开(公告)日：2014-04-01
申请号：US13560109
申请日：2012-07-27
IPC分类号： H01L29/06 , H01L29/78 , H01L21/301 , H01L21/335
CPC分类号： H01L29/7816 , H01L29/063 , H01L29/0653 , H01L29/0878 , H01L29/1095 , H01L29/66681
摘要： A method produces a semiconductor device including a semiconductor body, an electrode thereon, and an insulating structure insulating the electrode from the semiconductor body. The semiconductor body includes a first contact region of a first conductivity type, a body region of a second conductivity type, a drift region of the first conductivity type, and a second contact region having a higher maximum doping concentration than the drift region. The insulating structure includes a gate dielectric portion forming a first horizontal interface. with the drift region and has a first maximum vertical extension A field dielectric portion forms with the drift region second and third horizontal interfaces arranged below the main surface. A second maximum vertical extension of the field dielectric portion is larger than the first maximum vertical extension. A third maximum vertical extension of the field dielectric portion is larger than the second maximum vertical extension.
摘要翻译： 一种方法产生半导体器件，其包括半导体本体，其上的电极以及将电极与半导体本体绝缘的绝缘结构。 半导体本体包括第一导电类型的第一接触区域，第二导电类型的体区域，第一导电类型的漂移区域和具有比漂移区域更高的最大掺杂浓度的第二接触区域。 绝缘结构包括形成第一水平界面的栅介质部分。 具有漂移区域并且具有第一最大垂直延伸部A场介电部分形成，漂移区域布置在主表面下方的第二和第三水平界面。 场介电部分的第二最大垂直延伸大于第一最大垂直延伸。 场电介质部分的第三最大垂直延伸大于第二最大垂直延伸。
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公开(公告)号：US08598655B1
公开(公告)日：2013-12-03
申请号：US13566742
申请日：2012-08-03
申请人： Till Schloesser , Rolf Weis , Ralf Rudolf
发明人： Till Schloesser , Rolf Weis , Ralf Rudolf
IPC分类号： H01L29/08 , H01L29/417 , H01L29/78
CPC分类号： H01L27/0883 , H01L21/823412 , H01L21/823487 , H01L29/0634 , H01L29/42368 , H01L29/7809 , H01L29/781 , H01L29/7813 , H01L29/7828 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first transistor with a first drift zone, and a plurality of second transistors, each second transistor comprising a source region, a drain region and a gate electrode. The second transistors are electrically coupled in series to form a series circuit that is electrically coupled to the first transistor, the first and the plurality of second transistors being at least partially disposed in a semiconductor substrate including a buried doped layer, wherein the source or the drain regions of the second transistors are disposed in the buried doped layer.
摘要翻译： 半导体器件包括具有第一漂移区的第一晶体管和多个第二晶体管，每个第二晶体管包括源极区，漏极区和栅电极。 第二晶体管串联电耦合以形成电耦合到第一晶体管的串联电路，第一和第二晶体管至少部分地设置在包括掩埋掺杂层的半导体衬底中，其中源极或 第二晶体管的漏极区域设置在掩埋掺杂层中。
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公开(公告)号：US06693327B2
公开(公告)日：2004-02-17
申请号：US10074605
申请日：2002-02-12
IPC分类号： H01L2701
CPC分类号： H01L29/7393 , H01L27/1203 , H01L29/861
摘要： A lateral semiconductor element (10) in thin-film SOI technology comprises an insulator layer (14) which rests on a substrate (12) and is buried under a thin silicon film (16), on top of which the source, or anode, contact (18) and the drain, or cathode, contact (22) are mounted. The anode contact (18) and the cathode contact (22) each lie over separate shield regions (28,30) within substrate (12), with the anode contact (18) being electrically connected with substrate (12).
摘要翻译： 薄膜SOI技术中的横向半导体元件（10）包括沉积在衬底（12）上并被埋在薄硅膜（16）下面的绝缘体层（14），其上的源极或阳极， 触点（18）和漏极（或阴极）触点（22）被安装。 阳极接触件（18）和阴极接触件（22）各自位于衬底（12）内的分离的屏蔽区域（28,30）上，阳极接触件（18）与衬底（12）电连接。
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公开(公告)号：US20140027848A1
公开(公告)日：2014-01-30
申请号：US13560109
申请日：2012-07-27
CPC分类号： H01L29/7816 , H01L29/063 , H01L29/0653 , H01L29/0878 , H01L29/1095 , H01L29/66681
摘要： A method produces a semiconductor device including a semiconductor body, an electrode thereon, and an insulating structure insulating the electrode from the semiconductor body. The semiconductor body includes a first contact region of a first conductivity type, a body region of a second conductivity type, a drift region of the first conductivity type, and a second contact region having a higher maximum doping concentration than the drift region. The insulating structure includes a gate dielectric portion forming a first horizontal interface. with the drift region and has a first maximum vertical extension A field dielectric portion forms with the drift region second and third horizontal interfaces arranged below the main surface. A second maximum vertical extension of the field dielectric portion is larger than the first maximum vertical extension. A third maximum vertical extension of the field dielectric portion is larger than the second maximum vertical extension.
摘要翻译： 一种方法产生半导体器件，其包括半导体本体，其上的电极以及将电极与半导体本体绝缘的绝缘结构。 半导体本体包括第一导电类型的第一接触区域，第二导电类型的体区域，第一导电类型的漂移区域和具有比漂移区域更高的最大掺杂浓度的第二接触区域。 绝缘结构包括形成第一水平界面的栅介质部分。 具有漂移区域并且具有第一最大垂直延伸部A场介电部分形成，漂移区域布置在主表面下方的第二和第三水平界面。 场介电部分的第二最大垂直延伸大于第一最大垂直延伸。 场电介质部分的第三最大垂直延伸大于第二最大垂直延伸。
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