公开(公告)号：US20090095399A1

公开(公告)日：2009-04-16

申请号：US11722115

申请日：2005-12-22

申请人： Marc Zussy ,  Bernard Aspar ,  Chrystelle Lagahe-Blanchard ,  Hubert Moriceau

发明人： Marc Zussy ,  Bernard Aspar ,  Chrystelle Lagahe-Blanchard ,  Hubert Moriceau

IPC分类号： B32B37/02

CPC分类号： H01L21/02008 ,  H01L21/76251 ,  H01L21/76254 ,  Y10T156/10

摘要： A method for trimming a structure obtained by bonding a first wafer to a second waver on contact faces and thinning the first waver, wherein at least either the first wafer or the second wafer is chamfered and thus exposes the edge of the contact face of the first wafer, wherein the trimming concerns the first wafer. The method includes a) selecting the second wafer from among wafers with a resistance to a chemical etching planned in b) that is sufficient with respect to the first wafer to allow b) to be carried out; b) after bonding the first wafer to the second wafer, chemical etching the edge of the first wafer to form in the first wafer a pedestal resting entirely on the contact face of the second wafer and supporting the remaining of the first wafer; and c) thinning the first wafer until the pedestal is reached and attacked, to provide a thinned part of the first wafer.

摘要翻译： 一种用于修整通过将第一晶片接合在接触面上的第二摆动件并使第一摇摆器变薄而获得的结构的方法，其中至少第一晶片或第二晶片被倒角，从而使第一晶片或第二晶片的接触面的边缘暴露在第一 晶片，其中修整涉及第一晶片。 该方法包括：a）从具有对b）中计划的化学蚀刻的抗性的晶片中选择第二晶片，相对于第一晶片来说足以允许b）被执行; b）在将第一晶片接合到第二晶片之后，化学蚀刻第一晶片的边缘，以在第一晶片中形成完全搁置在第二晶片的接触面上并支撑第一晶片的剩余部分的基座; 以及c）使所述第一晶片变薄直到所述基座到达并受到攻击，以提供第一晶片的变薄部分。

公开(公告)号：US08329048B2

公开(公告)日：2012-12-11

申请号：US11722115

申请日：2005-12-22

申请人： Marc Zussy ,  Bernard Aspar ,  Chrystelle Lagahe-Blanchard ,  Hubert Moriceau

发明人： Marc Zussy ,  Bernard Aspar ,  Chrystelle Lagahe-Blanchard ,  Hubert Moriceau

IPC分类号： B23B37/02

CPC分类号： H01L21/02008 ,  H01L21/76251 ,  H01L21/76254 ,  Y10T156/10

摘要： A method for trimming a structure obtained by bonding a first wafer to a second waver on contact faces and thinning the first waver, wherein at least either the first wafer or the second wafer is chamfered and thus exposes the edge of the contact face of the first wafer, wherein the trimming concerns the first wafer. The method includes a) selecting the second wafer from among wafers with a resistance to a chemical etching planned in b) that is sufficient with respect to the first wafer to allow b) to be carried out; b) after bonding the first wafer to the second wafer, chemical etching the edge of the first wafer to form in the first wafer a pedestal resting entirely on the contact face of the second wafer and supporting the remaining of the first wafer; and c) thinning the first wafer until the pedestal is reached and attacked, to provide a thinned part of the first wafer.

摘要翻译： 一种用于修整通过将第一晶片接合在接触面上的第二摆动件并使第一摇摆器变薄而获得的结构的方法，其中至少第一晶片或第二晶片被倒角，从而使第一晶片或第二晶片的接触面的边缘暴露在第一 晶片，其中修整涉及第一晶片。 该方法包括：a）从具有对b）中计划的化学蚀刻的抗性的晶片中选择第二晶片，相对于第一晶片来说足以允许b）被执行; b）在将第一晶片接合到第二晶片之后，化学蚀刻第一晶片的边缘，以在第一晶片中形成完全搁置在第二晶片的接触面上并支撑第一晶片的剩余部分的基座; 以及c）使所述第一晶片变薄直到所述基座到达并受到攻击，以提供第一晶片的变薄部分。

公开(公告)号：US20050029224A1

公开(公告)日：2005-02-10

申请号：US10468223

申请日：2002-04-11

申请人： Bernard Aspar ,  Hubert Moriceau ,  Marc Zussy ,  Olivier Rayssac

发明人： Bernard Aspar ,  Hubert Moriceau ,  Marc Zussy ,  Olivier Rayssac

IPC分类号： H01L21/02 ,  H01L21/68 ,  H01L21/762 ,  H01L21/78 ,  H01L27/12 ,  B44C1/22

CPC分类号： H01L21/7813 ,  H01L21/6835 ,  H01L21/76254 ,  H01L21/76259 ,  H01L2221/68318 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2924/19041 ,  Y10T156/11

摘要： The invention relates to the preparation of a thin layer comprising a step in which an interface is created between a layer used to create said thin layer and a substrate, characterized in that said interface is made in such way that it is provided with at least one first zone (Z1) which has a first level of mechanical strength, and a second zone (Z2) which has a level of mechanical strength which is substantially lower than that of the first zone. Said interface can be created by glueing surfaces which are prepared in a differentiated manner, by a layer which is buried and embrittled in a differentiated manner in said zones, or by an intermediate porous layer.

摘要翻译： 本发明涉及薄层的制备，其包括在用于产生所述薄层的层与基底之间形成界面的步骤，其特征在于，所述界面制成使得其具有至少一个 具有第一级机械强度的第一区域（Z1）和具有基本上低于第一区域的机械强度水平的第二区域（Z2）。 所述界面可以通过以不同的方式制备的表面，通过在所述区域中以不同的方式被掩埋和脆化的层或通过中间多孔层来胶合表面而形成。

公开(公告)号：US07713369B2

公开(公告)日：2010-05-11

申请号：US10468223

申请日：2002-04-11

申请人： Bernard Aspar ,  Hubert Moriceau ,  Marc Zussy ,  Olivier Rayssac

发明人： Bernard Aspar ,  Hubert Moriceau ,  Marc Zussy ,  Olivier Rayssac

IPC分类号： B32B38/10

CPC分类号： H01L21/7813 ,  H01L21/6835 ,  H01L21/76254 ,  H01L21/76259 ,  H01L2221/68318 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2924/19041 ,  Y10T156/11

摘要： The invention relates to the preparation of a thin layer comprising a step in which an interface is created between a layer used to create said thin layer and a substrate, characterized in that said interface is made in such a way that it is provided with at least one first zone (Z1) which has a first level of mechanical strength, and a second zone (Z2) which has a level of mechanical strength which is substantially lower than that of the first zone. Said interface can be created by glueing surfaces which are prepared in a differentiated manner, by a layer which is buried and embrittled in a differentiated manner in said zones, or by an intermediate porous layer.

摘要翻译： 本发明涉及薄层的制备，其包括在用于产生所述薄层的层与基底之间形成界面的步骤，其特征在于所述界面以至少提供至少 具有第一级机械强度的第一区域（Z1）和具有基本上低于第一区域的机械强度水平的第二区域（Z2）。 所述界面可以通过以不同的方式制备的表面，通过在所述区域中以不同的方式被掩埋和脆化的层或通过中间多孔层来胶合表面而形成。

公开(公告)号：US07494897B2

公开(公告)日：2009-02-24

申请号：US10540303

申请日：2003-12-22

申请人： Franck Fournel ,  Hubert Moriceau ,  Bernard Aspar ,  Marc Zussy

发明人： Franck Fournel ,  Hubert Moriceau ,  Bernard Aspar ,  Marc Zussy

IPC分类号： H01L21/30

CPC分类号： H01L21/76264 ,  H01L21/187 ,  H01L21/76275

摘要： The inventive method includes a preparation step during which the substrate is covered with a layer, a pressing step in which a mould including a pattern of recesses and protrusions is pressed into part of the thickness of the aforementioned layer, at least one etching step in which the layer is etched until parts of the surface of the substrate have been stripped, and a substrate etching step whereby the substrate is etched using an etching pattern which is defined from the mould pattern. The preparation step includes a sub-step consisting of the formation of a lower sub-layer of curable material, a step involving the curing of said layer and a sub-step including the formation of an outer sub-layer which is adjacent to the cured sub-layer. Moreover, during the pressing step, the above-mentioned protrusions in the mould penetrate the outer sub-layer until contact is reached with the cured sub-layer.

摘要翻译： 本发明的方法包括一个制备步骤，在该步骤中衬底被一层覆盖，一个压制步骤，其中将包括凹凸图案的模具压入上述层的厚度的一部分中，至少一个蚀刻步骤，其中 蚀刻该层，直到基板的表面的一部分被剥离，以及基板蚀刻步骤，由此使用从模具图案限定的蚀刻图案来蚀刻该基板。 制备步骤包括由可固化材料的下层形成的子步骤，涉及所述层的固化的步骤和包括形成邻近固化的外部亚层的子步骤 子层。 此外，在挤压步骤中，模具中的上述突起穿透外部子层，直到与固化的子层接触。

公开(公告)号：US20060166461A1

公开(公告)日：2006-07-27

申请号：US10540303

申请日：2003-12-22

申请人： Franck Fournel ,  Hubert Moriceau ,  Bernard Aspar ,  Marc Zussy

发明人： Franck Fournel ,  Hubert Moriceau ,  Bernard Aspar ,  Marc Zussy

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76264 ,  H01L21/187 ,  H01L21/76275

摘要： The inventive method includes a preparation step during which the substrate is covered with a layer, a pressing step in which a mould including a pattern of recesses and protrusions is pressed into part of the thickness of the aforementioned layer, at least one etching step in which the layer is etched until parts of the surface of the substrate have been stripped, and a substrate etching step whereby the substrate is etched using an etching pattern which is defined from the mould pattern. The preparation step includes a sub-step consisting of the formation of a lower sub-layer of curable material, a step involving the curing of said layer and a sub-step including the formation of an outer sub-layer which is adjacent to the cured sub-layer. Moreover, during the pressing step, the above-mentioned protrusions in the mould penetrate the outer sub-layer until contact is reached with the cured sub-layer.

公开(公告)号：US20050101095A1

公开(公告)日：2005-05-12

申请号：US10450528

申请日：2001-12-27

申请人： Franck Fournel ,  Hubert Moriceau ,  Marc Zussy ,  Noel Magnea

发明人： Franck Fournel ,  Hubert Moriceau ,  Marc Zussy ,  Noel Magnea

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L21/18 ,  H01L21/762 ,  H01L21/336

CPC分类号： H01L21/187 ,  H01L21/76251

摘要： Method for producing a stacked structure by obtaining at least two crystalline parts by detaching them from a same initial structure, each crystalline part having one face created by the detachment having a tilt angle with a reference crystalline plane of the initial structure. Structures are formed from the crystalline parts, each structure having a face to be assembled that has a controlled tilt angle in relation to the tilt angle of the created face of the corresponding crystalline part. The structures are assembled while controlling their relative positions, rotating in an interface plane, in relation to relative positions of respective crystalline parts within the initial structure, to obtain a controlled resulting tilt angle at the interface between the structures. The method may find application particularly in microelectronics, optics, and optoelectronics.

摘要翻译： 通过从相同的初始结构中分离出至少两个结晶部分来制造层叠结构的方法，每个结晶部分具有通过与初始结构的参考晶面具有倾斜角度的分离产生的一个面。 结构由结晶部分形成，每个结构具有相对于相应结晶部分的产生面的倾斜角具有受控倾斜角的待组装面。 结构被组装，同时控制它们在界面平面中相对于初始结构内的各结晶部分的相对位置旋转的相对位置，以在结构之间的界面处获得受控的所得到的倾斜角。 该方法可以特别在微电子学，光学和光电子学中得到应用。

公开(公告)号：US07947564B2

公开(公告)日：2011-05-24

申请号：US11857130

申请日：2007-09-18

申请人： Marek Kostrzewa ,  Hubert Moriceau ,  Marc Zussy

发明人： Marek Kostrzewa ,  Hubert Moriceau ,  Marc Zussy

IPC分类号： H01L21/76

CPC分类号： H01L21/76254 ,  B81C1/00357

摘要： A method of fabricating a mixed microtechnology structure includes providing a provisional substrate including a sacrificial layer on which is formed a mixed layer including at least first patterns of a first material and second patterns of a second material different from the first material, where the first and second patterns reside adjacent the sacrificial layer. The sacrificial layer is removed exposing a mixed surface of the mixed layer, the mixed surface including portions of the first patterns and portions of the second patterns. A continuous is formed covering layer of a third material on the mixed surface by direct bonding.

摘要翻译： 制造混合微技术结构的方法包括提供包括牺牲层的临时衬底，其上形成有至少包括第一材料的第一图案和不同于第一材料的第二材料的第二图案的混合层，其中第一和 第二图案位于牺牲层附近。 消除牺牲层暴露混合层的混合表面，混合表面包括第一图案的部分和第二图案的部分。 连续地通过直接粘合在混合表面上形成第三材料的覆盖层。

公开(公告)号：US09219004B2

公开(公告)日：2015-12-22

申请号：US13819993

申请日：2011-08-24

申请人： Hubert Moriceau ,  Maxime Argoud ,  Christophe Morales ,  Marc Zussy

发明人： Hubert Moriceau ,  Maxime Argoud ,  Christophe Morales ,  Marc Zussy

IPC分类号： H01L21/00 ,  H01L29/06 ,  H01L21/762 ,  H01L21/20 ,  H01L21/683 ,  H01L21/68

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L21/68 ,  H01L21/6835 ,  H01L21/762 ,  H01L21/76224

摘要： A method for obtaining a film made out of a first material on a polymer support, said method comprising bonding a first wafer to a second wafer, thereby defining a bonding interface between said first wafer and said second wafer, at least one of said first and second wafers comprising a layer of said first material situated in proximity to said bonding interface, in said first wafer, hollowing out a cavity, said cavity comprising a bottom parallel to said bonding interface that defines, in said first wafer, a bottom zone at a controlled distance relative to said second wafer, forming, in said cavity, a polymer layer on a thickness controlled from a bottom thereof to obtain a combined wafer portion, said combined wafer portion comprising a bottom zone formed by said polymer layer on said bottom and a peripheral zone, and eliminating said second wafer on a major portion of a thickness thereof, thereby releasing, beneath said polymer layer, a film comprising said layer of said first material.

摘要翻译： 一种用于获得由聚合物载体上的第一材料制成的膜的方法，所述方法包括将第一晶片接合到第二晶片，由此限定所述第一晶片和所述第二晶片之间的结合界面，所述第一和第二晶片中的至少一个 第二晶片包括位于所述接合界面附近的所述第一材料层，在所述第一晶片中，挖空出空腔，所述空腔包括平行于所述结合界面的底部，所述底部在所述第一晶片中在 在所述空腔中形成从其底部控制的厚度的聚合物层以获得组合的晶片部分，所述组合的晶片部分包括由所述底部上的所述聚合物层形成的底部区域和 周边区域，并且在其厚度的主要部分上消除所述第二晶片，从而在所述聚合物层下方释放包含所述第一材料层的膜 ial

公开(公告)号：US20090165277A1

公开(公告)日：2009-07-02

申请号：US12341645

申请日：2008-12-22

申请人： Marc Zussy ,  Lea Di Cioccio ,  Christophe Morales ,  Hubert Moriceau

发明人： Marc Zussy ,  Lea Di Cioccio ,  Christophe Morales ,  Hubert Moriceau

IPC分类号： B23P19/00

CPC分类号： B28D5/0017 ,  H01L21/67092 ,  Y10T29/49815 ,  Y10T29/49821 ,  Y10T29/49822 ,  Y10T29/53274 ,  Y10T29/53683 ,  Y10T29/54

摘要： A method of separating a structure including a fragile zone delimiting two substructures to be separated, where at least one plane blade is advanced in a separation plane corresponding to a median plane of the fragile zone, from an entry edge of the structure in a direction of advance toward an exit edge of the structure, so as to cause progressive separation of the two substructures, and where the inclination of the blade in the separation plane is varied relative to the direction of advance.

摘要翻译： 一种分离包括限定要分离的两个子结构的脆弱区域的结构的方法，其中至少一个平面叶片在对应于脆弱区域的中间平面的分离平面中前进到结构的入口边缘，方向为 朝向结构的出口边缘前进，以便引起两个子结构的逐渐分离，并且其中分离平面中的叶片的倾斜相对于前进方向变化。