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1.发明授权公开(公告)号：US08329048B2
公开(公告)日：2012-12-11
申请号：US11722115
申请日：2005-12-22
IPC分类号： B23B37/02
CPC分类号： H01L21/02008 , H01L21/76251 , H01L21/76254 , Y10T156/10
摘要： A method for trimming a structure obtained by bonding a first wafer to a second waver on contact faces and thinning the first waver, wherein at least either the first wafer or the second wafer is chamfered and thus exposes the edge of the contact face of the first wafer, wherein the trimming concerns the first wafer. The method includes a) selecting the second wafer from among wafers with a resistance to a chemical etching planned in b) that is sufficient with respect to the first wafer to allow b) to be carried out; b) after bonding the first wafer to the second wafer, chemical etching the edge of the first wafer to form in the first wafer a pedestal resting entirely on the contact face of the second wafer and supporting the remaining of the first wafer; and c) thinning the first wafer until the pedestal is reached and attacked, to provide a thinned part of the first wafer.
摘要翻译： 一种用于修整通过将第一晶片接合在接触面上的第二摆动件并使第一摇摆器变薄而获得的结构的方法，其中至少第一晶片或第二晶片被倒角，从而使第一晶片或第二晶片的接触面的边缘暴露在第一 晶片，其中修整涉及第一晶片。 该方法包括：a）从具有对b）中计划的化学蚀刻的抗性的晶片中选择第二晶片，相对于第一晶片来说足以允许b）被执行; b）在将第一晶片接合到第二晶片之后，化学蚀刻第一晶片的边缘，以在第一晶片中形成完全搁置在第二晶片的接触面上并支撑第一晶片的剩余部分的基座; 以及c）使所述第一晶片变薄直到所述基座到达并受到攻击，以提供第一晶片的变薄部分。
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2.发明申请METHOD FOR PRODUCING PARTIAL SOI STRUCTURES COMPRISING ZONES CONNECTING A SUPERFICIAL LAYER AND A SUBSTRATE 有权用于生产包含连接超级层和基板的区域的部分SOI结构的方法公开(公告)号：US20100176397A1
公开(公告)日：2010-07-15
申请号：US12730636
申请日：2010-03-24
IPC分类号： H01L29/04
CPC分类号： B81C1/00357 , B81C1/0038 , B81C2201/019 , H01L21/02381 , H01L21/02532 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/76251 , H01L21/76254 , Y10T428/12674
摘要： The invention relates to a method for producing a semiconductor structure comprising a superficial layer, at least one embedded layer, and a support, which method comprises: a step of forming, on a first support, patterns in a first material, a step of forming a semiconductor layer, between and on said patterns, a step of assembling said semiconductor layer with a second support.
摘要翻译： 本发明涉及一种用于制造半导体结构的方法，该半导体结构包括表层，至少一个嵌入层和支撑体，该方法包括：在第一支撑件上形成第一材料中的图案，形成步骤 在所述图案之间和之间的半导体层，具有用第二支撑件组装所述半导体层的步骤。
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公开(公告)号：US20070122926A1
公开(公告)日：2007-05-31
申请号：US11668799
申请日：2007-01-30
申请人： Muriel Martinez , Thierry Barge , Alain Soubie , Chrystelle Lagahe-Blanchard , Cecile Berne , Olivier Rayssac
发明人： Muriel Martinez , Thierry Barge , Alain Soubie , Chrystelle Lagahe-Blanchard , Cecile Berne , Olivier Rayssac
CPC分类号： H01L21/67092 , B28D5/0011 , B28D5/0023 , B28D5/0064 , B28D5/0082 , Y10S156/921 , Y10T83/7607 , Y10T83/7667 , Y10T156/1142 , Y10T156/1179 , Y10T156/1967 , Y10T156/1983
摘要： An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch located below the weakened area. The positioning member maintains the position of the substrate on a moveable support. A cutting mechanism having at least one blade is provided for contacting the substrate and inducing a cleaving wave therein. The cutting mechanism is operatively associated with the positioning member so that the as at least one blade contacts the annular notch, the positioning member prevents movement of the substrate and the moveable support moves away from the substrate to allow the cleaving wave to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.
摘要翻译： 一种用于从半导体衬底分离层的自动高精度层切割装置。 该装置包括用于接收其中具有弱化区域的半导体衬底的至少一部分和位于弱化区域下方的周边环形凹口的固定定位构件。 定位构件将基板的位置保持在可移动支撑件上。 提供具有至少一个叶片的切割机构用于接触基底并在其中引入切割波。 所述切割机构与所述定位构件可操作地相关联，使得所述至少一个叶片接触所述环形切口，所述定位构件防止所述基板移动，并且所述可移动支撑件移动离开所述基板，以允许所述切割波将所述基板 在切口处形成第一和第二部分，并且沿着弱化区域从基板分离层。
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公开(公告)号：US20070072393A1
公开(公告)日：2007-03-29
申请号：US10574798
申请日：2004-10-14
CPC分类号： H01L21/304 , H01L21/76251 , H01L21/76254 , H01L21/76256
摘要： A method for assembling a first and a second wafer of material, including routing at least the first wafer and assembling the first and second wafer.
摘要翻译： 一种用于组装第一和第二材料晶片的方法，包括至少布置第一晶片并组装第一和第二晶片。
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5.发明授权Method for producing partial SOI structures comprising zones connecting a superficial layer and a substrate 有权用于制造部分SOI结构的方法，包括连接表面层和基底的区域公开(公告)号：US08044465B2
公开(公告)日：2011-10-25
申请号：US12730636
申请日：2010-03-24
IPC分类号： H01L29/786
CPC分类号： B81C1/00357 , B81C1/0038 , B81C2201/019 , H01L21/02381 , H01L21/02532 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/76251 , H01L21/76254 , Y10T428/12674
摘要： The invention relates to a method for producing a semiconductor structure comprising a superficial layer, at least one embedded layer, and a support, which method comprises: a step of forming, on a first support, patterns in a first material, a step of forming a semiconductor layer, between and on said patterns, a step of assembling said semiconductor layer with a second support.
摘要翻译： 本发明涉及一种用于制造半导体结构的方法，该半导体结构包括表层，至少一个嵌入层和支撑体，该方法包括：在第一支撑件上形成第一材料中的图案，形成步骤 在所述图案之间和之间的半导体层，具有用第二支撑件组装所述半导体层的步骤。
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公开(公告)号：US20110183495A1
公开(公告)日：2011-07-28
申请号：US13011267
申请日：2011-01-21
IPC分类号： H01L21/762
CPC分类号： H01L21/2007 , H01L21/187
摘要： The invention relates to a process for annealing a structure that includes at least one wafer, with the annealing process including conducting a first annealing of the structure in an oxidizing atmosphere while holding the structure in contact with a holder in a first position in order to oxidize at least portion of the exposed surface of the structure, shifting the structure on the holder into a second position in which non-oxidized regions of the structure are exposed, and conducting a second annealing of the structure in an oxidizing atmosphere while holding the structure in the second position. The process provides an oxide layer on the structure.
摘要翻译： 本发明涉及退火包括至少一个晶片的结构的方法，退火工艺包括在氧化气氛中进行结构的第一退火，同时保持结构与第一位置的保持器接触以氧化 所述结构的暴露表面的至少一部分将所述保持器上的结构移动到其中暴露所述结构的非氧化区域的第二位置，并且在保持所述结构的同时在所述结构的氧化气氛中进行所述结构的第二退火 第二个位置。 该过程在结构上提供氧化物层。
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公开(公告)号：US20110076849A1
公开(公告)日：2011-03-31
申请号：US12851227
申请日：2010-08-05
IPC分类号： H01L21/465 , B32B38/10
CPC分类号： H01L21/76256 , H01L21/304 , H01L21/30608 , Y10T29/49117 , Y10T29/49126
摘要： A method of fabricating a multilayer substrate may include bonding a front face of a donor substrate to a front face of a receiver substrate by molecular adhesion to form a stack and applying a heat treatment to the stack to consolidate a bond interface between the donor substrate and the receiver substrate. The method may further include thinning a back face of the donor substrate, trimming a periphery of the donor substrate and at least a portion of a periphery of the receiver substrate, and etching the back face of the donor substrate, the periphery of the donor substrate, and the at least a portion of the periphery of the receiver substrate subsequent to thinning the back face of the donor substrate and trimming the periphery of the donor substrate and the at least a portion of the periphery of the receiver substrate.
摘要翻译： 制造多层基板的方法可以包括通过分子粘合将供体基板的前表面粘合到接收器基板的前表面以形成堆叠并对堆叠施加热处理以巩固施主基板与供体基板之间的键合界面 接收器基板。 该方法可以进一步包括使施主衬底的背面变薄，修整施主衬底的周边和接收器衬底的周边的至少一部分，以及蚀刻施主衬底的背面，施主衬底的周边 以及接收器基板的外围的至少一部分，然后使施主衬底的背面变薄并且修整施主衬底的周边和接收器衬底的周边的至少一部分。
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公开(公告)号：US20090149005A1
公开(公告)日：2009-06-11
申请号：US11719834
申请日：2005-11-25
CPC分类号： C30B33/02 , C30B25/04 , C30B33/00 , H01L21/02381 , H01L21/02532 , H01L21/02625 , H01L21/02639 , H01L21/02647 , H01L21/02664
摘要： The invention concerns a method for forming a growth mask on the surface of an initial crystalline substrate, comprising the following steps: formation of a layer of second material on one of the faces of the initial substrate of first material, formation of a pattern in the thickness of the layer of second material so as to expose the zones of said face of the initial substrate, said zones forming growth windows on the initial substrate, the method being characterised in that the formation of the pattern is obtained by ion implantation carried out in the surface layer of the initial substrate underlying the layer of second material, the implantation conditions being such that they cause, directly or after a heat treatment, on said face of the initial substrate, the appearance of exfoliated zones of first material leading to the localised removal of the zones of second material covering the exfoliated zones of first material, thereby locally exposing the initial substrate and forming growth windows on the initial substrate. The invention further concerns methods for forming a crystalline thin film and transferring this thin film onto a host substrate.
摘要翻译： 本发明涉及一种用于在初始晶体衬底的表面上形成生长掩模的方法，包括以下步骤：在第一材料的初始衬底的一个面上形成第二材料层，在第一材料的表面形成图案 第二材料层的厚度以露出初始衬底的所述面的区域，所述区域在初始衬底上形成生长窗口，该方法的特征在于，通过离子注入在 在第二材料层下面的初始衬底的表面层，注入条件使得它们直接或在热处理之后在初始衬底的所述表面上引起导致局部化的第一材料的剥离区域的出现 去除覆盖第一材料的剥离区域的第二材料的区域，从而局部暴露初始衬底并形成g 初始底物上的第一个窗口。 本发明还涉及形成结晶薄膜并将该薄膜转移到主体衬底上的方法。
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公开(公告)号：US20080254596A1
公开(公告)日：2008-10-16
申请号：US11628615
申请日：2005-06-02
IPC分类号： H01L21/30
CPC分类号： H01L21/6835 , H01L2221/68359 , H01L2221/68368
摘要： The invention concerns a method for preparing a thin layer (28) or a chip to be transferred onto another substrate, this method including the realization, above the surface of said thin layer or said chip, of at least one layer, called adhesive layer (25), and of at least one layer, called first barrier layer (22), the adhesive layer being made of a material of which etching presents selectivity in relation to the material of the barrier layer.
摘要翻译： 本发明涉及一种用于制备要转移到另一基板上的薄层（28）或芯片的方法，该方法包括在所述薄层或所述芯片的表面上方实现至少一层称为粘合层（ 25）和至少一层称为第一阻挡层（22）的粘合剂层，所述粘合剂层由蚀刻相对于阻挡层的材料具有选择性的材料制成。
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公开(公告)号：US20080176381A1
公开(公告)日：2008-07-24
申请号：US11827709
申请日：2007-07-13
CPC分类号： B81C1/00952 , B81B3/001 , B81C2201/115
摘要： A process of forming a rough interface in a semiconductor substrate. The process includes the steps of depositing a material on a surface of the substrate, forming a zone of irregularities in the material, and forming a rough interface in the semiconductor substrate by a thermal oxidation of the material and a part of the substrate. Additionally, the surface of the oxidized material may be prepared and the surface may be assembled with a second substrate.
摘要翻译： 在半导体衬底中形成粗糙界面的工艺。 该方法包括以下步骤：在衬底的表面上沉积材料，在材料中形成不规则区域，并通过材料和衬底的一部分的热氧化在半导体衬底中形成粗糙界面。 此外，可以制备氧化材料的表面，并且表面可以与第二衬底组装。
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