公开(公告)号：US20090095399A1

公开(公告)日：2009-04-16

申请号：US11722115

申请日：2005-12-22

申请人： Marc Zussy ,  Bernard Aspar ,  Chrystelle Lagahe-Blanchard ,  Hubert Moriceau

发明人： Marc Zussy ,  Bernard Aspar ,  Chrystelle Lagahe-Blanchard ,  Hubert Moriceau

IPC分类号： B32B37/02

CPC分类号： H01L21/02008 ,  H01L21/76251 ,  H01L21/76254 ,  Y10T156/10

摘要： A method for trimming a structure obtained by bonding a first wafer to a second waver on contact faces and thinning the first waver, wherein at least either the first wafer or the second wafer is chamfered and thus exposes the edge of the contact face of the first wafer, wherein the trimming concerns the first wafer. The method includes a) selecting the second wafer from among wafers with a resistance to a chemical etching planned in b) that is sufficient with respect to the first wafer to allow b) to be carried out; b) after bonding the first wafer to the second wafer, chemical etching the edge of the first wafer to form in the first wafer a pedestal resting entirely on the contact face of the second wafer and supporting the remaining of the first wafer; and c) thinning the first wafer until the pedestal is reached and attacked, to provide a thinned part of the first wafer.

摘要翻译： 一种用于修整通过将第一晶片接合在接触面上的第二摆动件并使第一摇摆器变薄而获得的结构的方法，其中至少第一晶片或第二晶片被倒角，从而使第一晶片或第二晶片的接触面的边缘暴露在第一 晶片，其中修整涉及第一晶片。 该方法包括：a）从具有对b）中计划的化学蚀刻的抗性的晶片中选择第二晶片，相对于第一晶片来说足以允许b）被执行; b）在将第一晶片接合到第二晶片之后，化学蚀刻第一晶片的边缘，以在第一晶片中形成完全搁置在第二晶片的接触面上并支撑第一晶片的剩余部分的基座; 以及c）使所述第一晶片变薄直到所述基座到达并受到攻击，以提供第一晶片的变薄部分。

公开(公告)号：US08329048B2

公开(公告)日：2012-12-11

申请号：US11722115

申请日：2005-12-22

申请人： Marc Zussy ,  Bernard Aspar ,  Chrystelle Lagahe-Blanchard ,  Hubert Moriceau

发明人： Marc Zussy ,  Bernard Aspar ,  Chrystelle Lagahe-Blanchard ,  Hubert Moriceau

IPC分类号： B23B37/02

CPC分类号： H01L21/02008 ,  H01L21/76251 ,  H01L21/76254 ,  Y10T156/10

摘要： A method for trimming a structure obtained by bonding a first wafer to a second waver on contact faces and thinning the first waver, wherein at least either the first wafer or the second wafer is chamfered and thus exposes the edge of the contact face of the first wafer, wherein the trimming concerns the first wafer. The method includes a) selecting the second wafer from among wafers with a resistance to a chemical etching planned in b) that is sufficient with respect to the first wafer to allow b) to be carried out; b) after bonding the first wafer to the second wafer, chemical etching the edge of the first wafer to form in the first wafer a pedestal resting entirely on the contact face of the second wafer and supporting the remaining of the first wafer; and c) thinning the first wafer until the pedestal is reached and attacked, to provide a thinned part of the first wafer.

摘要翻译： 一种用于修整通过将第一晶片接合在接触面上的第二摆动件并使第一摇摆器变薄而获得的结构的方法，其中至少第一晶片或第二晶片被倒角，从而使第一晶片或第二晶片的接触面的边缘暴露在第一 晶片，其中修整涉及第一晶片。 该方法包括：a）从具有对b）中计划的化学蚀刻的抗性的晶片中选择第二晶片，相对于第一晶片来说足以允许b）被执行; b）在将第一晶片接合到第二晶片之后，化学蚀刻第一晶片的边缘，以在第一晶片中形成完全搁置在第二晶片的接触面上并支撑第一晶片的剩余部分的基座; 以及c）使所述第一晶片变薄直到所述基座到达并受到攻击，以提供第一晶片的变薄部分。

公开(公告)号：US20050029224A1

公开(公告)日：2005-02-10

申请号：US10468223

申请日：2002-04-11

申请人： Bernard Aspar ,  Hubert Moriceau ,  Marc Zussy ,  Olivier Rayssac

发明人： Bernard Aspar ,  Hubert Moriceau ,  Marc Zussy ,  Olivier Rayssac

IPC分类号： H01L21/02 ,  H01L21/68 ,  H01L21/762 ,  H01L21/78 ,  H01L27/12 ,  B44C1/22

CPC分类号： H01L21/7813 ,  H01L21/6835 ,  H01L21/76254 ,  H01L21/76259 ,  H01L2221/68318 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2924/19041 ,  Y10T156/11

摘要： The invention relates to the preparation of a thin layer comprising a step in which an interface is created between a layer used to create said thin layer and a substrate, characterized in that said interface is made in such way that it is provided with at least one first zone (Z1) which has a first level of mechanical strength, and a second zone (Z2) which has a level of mechanical strength which is substantially lower than that of the first zone. Said interface can be created by glueing surfaces which are prepared in a differentiated manner, by a layer which is buried and embrittled in a differentiated manner in said zones, or by an intermediate porous layer.

摘要翻译： 本发明涉及薄层的制备，其包括在用于产生所述薄层的层与基底之间形成界面的步骤，其特征在于，所述界面制成使得其具有至少一个 具有第一级机械强度的第一区域（Z1）和具有基本上低于第一区域的机械强度水平的第二区域（Z2）。 所述界面可以通过以不同的方式制备的表面，通过在所述区域中以不同的方式被掩埋和脆化的层或通过中间多孔层来胶合表面而形成。

公开(公告)号：US07713369B2

公开(公告)日：2010-05-11

申请号：US10468223

申请日：2002-04-11

申请人： Bernard Aspar ,  Hubert Moriceau ,  Marc Zussy ,  Olivier Rayssac

发明人： Bernard Aspar ,  Hubert Moriceau ,  Marc Zussy ,  Olivier Rayssac

IPC分类号： B32B38/10

CPC分类号： H01L21/7813 ,  H01L21/6835 ,  H01L21/76254 ,  H01L21/76259 ,  H01L2221/68318 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2924/19041 ,  Y10T156/11

摘要： The invention relates to the preparation of a thin layer comprising a step in which an interface is created between a layer used to create said thin layer and a substrate, characterized in that said interface is made in such a way that it is provided with at least one first zone (Z1) which has a first level of mechanical strength, and a second zone (Z2) which has a level of mechanical strength which is substantially lower than that of the first zone. Said interface can be created by glueing surfaces which are prepared in a differentiated manner, by a layer which is buried and embrittled in a differentiated manner in said zones, or by an intermediate porous layer.

摘要翻译： 本发明涉及薄层的制备，其包括在用于产生所述薄层的层与基底之间形成界面的步骤，其特征在于所述界面以至少提供至少 具有第一级机械强度的第一区域（Z1）和具有基本上低于第一区域的机械强度水平的第二区域（Z2）。 所述界面可以通过以不同的方式制备的表面，通过在所述区域中以不同的方式被掩埋和脆化的层或通过中间多孔层来胶合表面而形成。

公开(公告)号：US07494897B2

公开(公告)日：2009-02-24

申请号：US10540303

申请日：2003-12-22

申请人： Franck Fournel ,  Hubert Moriceau ,  Bernard Aspar ,  Marc Zussy

发明人： Franck Fournel ,  Hubert Moriceau ,  Bernard Aspar ,  Marc Zussy

IPC分类号： H01L21/30

CPC分类号： H01L21/76264 ,  H01L21/187 ,  H01L21/76275

摘要： The inventive method includes a preparation step during which the substrate is covered with a layer, a pressing step in which a mould including a pattern of recesses and protrusions is pressed into part of the thickness of the aforementioned layer, at least one etching step in which the layer is etched until parts of the surface of the substrate have been stripped, and a substrate etching step whereby the substrate is etched using an etching pattern which is defined from the mould pattern. The preparation step includes a sub-step consisting of the formation of a lower sub-layer of curable material, a step involving the curing of said layer and a sub-step including the formation of an outer sub-layer which is adjacent to the cured sub-layer. Moreover, during the pressing step, the above-mentioned protrusions in the mould penetrate the outer sub-layer until contact is reached with the cured sub-layer.

摘要翻译： 本发明的方法包括一个制备步骤，在该步骤中衬底被一层覆盖，一个压制步骤，其中将包括凹凸图案的模具压入上述层的厚度的一部分中，至少一个蚀刻步骤，其中 蚀刻该层，直到基板的表面的一部分被剥离，以及基板蚀刻步骤，由此使用从模具图案限定的蚀刻图案来蚀刻该基板。 制备步骤包括由可固化材料的下层形成的子步骤，涉及所述层的固化的步骤和包括形成邻近固化的外部亚层的子步骤 子层。 此外，在挤压步骤中，模具中的上述突起穿透外部子层，直到与固化的子层接触。

公开(公告)号：US20060166461A1

公开(公告)日：2006-07-27

申请号：US10540303

申请日：2003-12-22

申请人： Franck Fournel ,  Hubert Moriceau ,  Bernard Aspar ,  Marc Zussy

发明人： Franck Fournel ,  Hubert Moriceau ,  Bernard Aspar ,  Marc Zussy

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76264 ,  H01L21/187 ,  H01L21/76275

摘要： The inventive method includes a preparation step during which the substrate is covered with a layer, a pressing step in which a mould including a pattern of recesses and protrusions is pressed into part of the thickness of the aforementioned layer, at least one etching step in which the layer is etched until parts of the surface of the substrate have been stripped, and a substrate etching step whereby the substrate is etched using an etching pattern which is defined from the mould pattern. The preparation step includes a sub-step consisting of the formation of a lower sub-layer of curable material, a step involving the curing of said layer and a sub-step including the formation of an outer sub-layer which is adjacent to the cured sub-layer. Moreover, during the pressing step, the above-mentioned protrusions in the mould penetrate the outer sub-layer until contact is reached with the cured sub-layer.

公开(公告)号：US20070072393A1

公开(公告)日：2007-03-29

申请号：US10574798

申请日：2004-10-14

申请人： Bernard Aspar ,  Chrystelle Lagahe-Blanchard

发明人： Bernard Aspar ,  Chrystelle Lagahe-Blanchard

IPC分类号： H01L21/30 ,  H01L21/00 ,  H01L21/46

CPC分类号： H01L21/304 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76256

摘要： A method for assembling a first and a second wafer of material, including routing at least the first wafer and assembling the first and second wafer.

摘要翻译： 一种用于组装第一和第二材料晶片的方法，包括至少布置第一晶片并组装第一和第二晶片。

公开(公告)号：US20090301995A1

公开(公告)日：2009-12-10

申请号：US12087093

申请日：2006-12-27

申请人： Bernard Aspar ,  Chrystelle Lagahe-Blanchard

发明人： Bernard Aspar ,  Chrystelle Lagahe-Blanchard

IPC分类号： H01L21/70 ,  B32B38/00 ,  C23F1/04

CPC分类号： H01L21/76254 ,  C30B29/06 ,  C30B33/02 ,  Y10T156/1153

摘要： Process for fabricating a structure in the form of a wafer, including at least a substrate, a superstrate and at least one intermediate layer interposed between the substrate and the superstrate, the process including: forming, on a substrate, at least one intermediate layer including at least one base material in which extrinsic atoms or molecules are distributed, these differing from the atoms or molecules of the base material, so as to constitute a substructure; applying a base heat treatment to this substructure such that, in the temperature range of this heat treatment, the presence of the chosen extrinsic atoms or molecules in the chosen base material causes a structural transformation of said intermediate layer; and joining a superstrate to said heat-treated intermediate layer so as to obtain said structure in the form of a wafer.

摘要翻译： 用于制造晶片形式的结构的方法，所述结构至少包括衬底，上覆层和插入在所述衬底和所述衬底之间的至少一个中间层，所述方法包括：在衬底上形成至少一个中间层，所述中间层包括 至少一种其中外分子原子或分子分布的基质，这些不同于基材的原子或分子，以构成亚结构; 对该子结构进行基础热处理，使得在该热处理的温度范围内，所选基材中所选择的外在原子或分子的存在导致所述中间层的结构变换; 并将上层接合到所述热处理的中间层，以获得晶片形式的所述结构。

公开(公告)号：US08044465B2

公开(公告)日：2011-10-25

申请号：US12730636

申请日：2010-03-24

申请人： Bernard Aspar ,  Chrystelle Lagahe-Blanchard

发明人： Bernard Aspar ,  Chrystelle Lagahe-Blanchard

IPC分类号： H01L29/786

CPC分类号： B81C1/00357 ,  B81C1/0038 ,  B81C2201/019 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/76251 ,  H01L21/76254 ,  Y10T428/12674

摘要： The invention relates to a method for producing a semiconductor structure comprising a superficial layer, at least one embedded layer, and a support, which method comprises: a step of forming, on a first support, patterns in a first material, a step of forming a semiconductor layer, between and on said patterns, a step of assembling said semiconductor layer with a second support.

摘要翻译： 本发明涉及一种用于制造半导体结构的方法，该半导体结构包括表层，至少一个嵌入层和支撑体，该方法包括：在第一支撑件上形成第一材料中的图案，形成步骤 在所述图案之间和之间的半导体层，具有用第二支撑件组装所述半导体层的步骤。

公开(公告)号：US20110183495A1

公开(公告)日：2011-07-28

申请号：US13011267

申请日：2011-01-21

申请人： Nicolas Sousbie ,  Bernard Aspar ,  Thierry Barge ,  Chrystelle Lagahe Blanchard

发明人： Nicolas Sousbie ,  Bernard Aspar ,  Thierry Barge ,  Chrystelle Lagahe Blanchard

IPC分类号： H01L21/762

CPC分类号： H01L21/2007 ,  H01L21/187

摘要： The invention relates to a process for annealing a structure that includes at least one wafer, with the annealing process including conducting a first annealing of the structure in an oxidizing atmosphere while holding the structure in contact with a holder in a first position in order to oxidize at least portion of the exposed surface of the structure, shifting the structure on the holder into a second position in which non-oxidized regions of the structure are exposed, and conducting a second annealing of the structure in an oxidizing atmosphere while holding the structure in the second position. The process provides an oxide layer on the structure.

摘要翻译： 本发明涉及退火包括至少一个晶片的结构的方法，退火工艺包括在氧化气氛中进行结构的第一退火，同时保持结构与第一位置的保持器接触以氧化 所述结构的暴露表面的至少一部分将所述保持器上的结构移动到其中暴露所述结构的非氧化区域的第二位置，并且在保持所述结构的同时在所述结构的氧化气氛中进行所述结构的第二退火 第二个位置。 该过程在结构上提供氧化物层。