公开(公告)号：US20050224458A1

公开(公告)日：2005-10-13

申请号：US10813390

申请日：2004-03-31

申请人： Marcel Gaudet ,  Aelan Mosden ,  Robert Soave

发明人： Marcel Gaudet ,  Aelan Mosden ,  Robert Soave

IPC分类号： B08B6/00 ,  B08B7/00 ,  C23C16/44

CPC分类号： H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/32082 ,  H01J2237/022

摘要： A system and method is provided for removing chamber residues from a plasma processing system in a dry cleaning process. The dry cleaning process includes introducing a process gas including a gas containing carbon and oxygen in a process chamber of the plasma processing system, generating a plasma from the process gas, exposing the chamber residue to the plasma in a dry cleaning process to form a volatile reaction product, and exhausting the reaction product from the process chamber. The plasma processing system may be monitored to determine status of the processing system, and based upon the status from the monitoring, the method includes either continuing the exposing and monitoring, or stopping the dry cleaning process. The dry cleaning process can be a waferless dry cleaning (WDC) process, or a substrate may present on the substrate holder in the process chamber during the dry cleaning process.

摘要翻译： 提供了用于在干洗过程中从等离子体处理系统中去除室残留物的系统和方法。 所述干洗方法包括在等离子体处理系统的处理室中引入包括含有碳和氧的气体的工艺气体，从所述工艺气体产生等离子体，在干式清洗过程中将所述室残留物暴露于等离子体以形成挥发性 反应产物，并从处理室中排出反应产物。 可以监测等离子体处理系统以确定处理系统的状态，并且基于来自监视的状态，该方法包括继续曝光和监视，或停止干洗过程。 干洗过程可以是无晶圆干洗（WDC）工艺，或者在干洗过程中，基板可能存在于处理室中的基板支架上。

公开(公告)号：US20050087516A1

公开(公告)日：2005-04-28

申请号：US10896995

申请日：2004-07-23

申请人： Kenneth Duerksen ,  David Wang ,  Robert Soave

发明人： Kenneth Duerksen ,  David Wang ,  Robert Soave

IPC分类号： C23F1/00 ,  H01L21/265 ,  H01L21/768

CPC分类号： H01L21/26586 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76832

摘要： A method for forming a mechanically strengthened feature in a low-k dielectric film on a substrate includes using either spin-on-dielectric (SOD) techniques, or chemical vapor deposition (CVD) techniques to form a low-k dielectric film on the substrate. A sidewall of the feature in the low-k dielectric film is then treated in order to increase the film's mechanical strength. Treatment of the sidewall of the feature in the low-k dielectric film comprises forming a hardened layer by subjecting the low-k dielectric film to low energy, high flux ion implantation. Process parameters of the ion implantation are selected such that the implantation process does not cause a substantial change in the dielectric constant of the low-k dielectric film.

摘要翻译： 在衬底上的低k电介质膜中形成机械强化特征的方法包括使用旋涂电介质（SOD）技术或化学气相沉积（CVD）技术在衬底上形成低k电介质膜 。 然后处理低k电介质膜中的特征的侧壁以增加膜的机械强度。 处理低k电介质膜中的特征的侧壁包括通过使低k电介质膜经受低能量，高通量离子注入而形成硬化层。 选择离子注入的工艺参数，使得注入工艺不会引起低k电介质膜的介电常数的显着变化。

公开(公告)号：US5087322A

公开(公告)日：1992-02-11

申请号：US602802

申请日：1990-10-24

申请人： David Lillienfeld ,  David Thomas ,  Paul Smith ,  Gerald Comeau ,  Robert Soave

发明人： David Lillienfeld ,  David Thomas ,  Paul Smith ,  Gerald Comeau ,  Robert Soave

IPC分类号： H01L21/04 ,  H01L21/285

CPC分类号： H01L29/66068 ,  H01L21/0485 ,  H01L21/0495 ,  H01L21/28518 ,  H01L21/28537 ,  H01L21/28575 ,  H01L21/28581

摘要： A method of selective metallization of high temperature semiconductors to produce ohmic or rectifying contacts includes modification of the surface of a high temperature semiconductor material and thereafter depositng metal thereon by chemical vapor deposition. The method includes a lithographic step to define the area on the semiconductor surface where the CVD material is to be deposited. Thereafter, a beam of refractory metal ions is directed onto the defined area to damage the semiconductor material surface so that it will react with CVD gases. The contact metal is then deposited on the damaged surface by chemical vapor deposition, so that the metal seeds on the damaged exposed surface of the semiconductor to permit direct formation of metallization on that surface.

摘要翻译： 选择性金属化高温半导体以制造欧姆或整流接触的方法包括改变高温半导体材料的表面，然后通过化学气相沉积在其上沉积金属。 该方法包括光刻步骤，以限定要沉积CVD材料的半导体表面上的区域。 此后，一束难熔金属离子被引导到限定区域上，以损坏半导体材料表面，使其与CVD气体反应。 然后通过化学气相沉积将接触金属沉积在损伤的表面上，使得半导体损坏的暴露表面上的金属晶种允许在该表面上直接形成金属化。