-
公开(公告)号:US20140162436A1
公开(公告)日:2014-06-12
申请号:US14009000
申请日:2012-03-30
申请人: Marco Rolandi , Michael Brasino , Adnan Kapetanovic , Vamsi Talla , Stephanie Vasko , Hideki Sato
发明人: Marco Rolandi , Michael Brasino , Adnan Kapetanovic , Vamsi Talla , Stephanie Vasko , Hideki Sato
IPC分类号: H01L21/02
CPC分类号: H01L21/02636 , B81C1/00492 , B81C2201/0154 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/02532 , H01L21/02656
摘要: Methods for forming inorganic nanostructures are provided. The methods create the inorganic nanostructures by positioning a writing electrode (e.g., a conductive “stamp”) spaced nanometers above a substrate such that a precursor is intermediate the two. Applying an electric field, a voltage bias, an ionic current, or an electronic current between the writing electrode and the substrate converts the precursor into an inorganic solid material (e.g., a semiconductor such as silicon or germanium) in the area of the writing electrode.
摘要翻译: 提供了形成无机纳米结构的方法。 这些方法通过将位于衬底上方的纳米级的写入电极(例如,导电“印模”)定位,使得前体在两者之间,从而产生无机纳米结构。 在写入电极和衬底之间施加电场,电压偏置,离子电流或电子电流在写入电极的区域中将前体转化为无机固体材料(例如半导体,例如硅或锗) 。
-
公开(公告)号:US09153437B2
公开(公告)日:2015-10-06
申请号:US14009000
申请日:2012-03-30
申请人: Marco Rolandi , Hideki Sato , Stephanie Vasko , Michael Brasino , Adnan Kapetanovic , Vamsi Talla
发明人: Marco Rolandi , Hideki Sato , Stephanie Vasko , Michael Brasino , Adnan Kapetanovic , Vamsi Talla
CPC分类号: H01L21/02636 , B81C1/00492 , B81C2201/0154 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/02532 , H01L21/02656
摘要: Methods for forming inorganic nanostructures are provided. The methods create the inorganic nanostructures by positioning a writing electrode (e.g., a conductive “stamp”) spaced nanometers above a substrate such that a precursor is intermediate the two. Applying an electric field, a voltage bias, an ionic current, or an electronic current between the writing electrode and the substrate converts the precursor into an inorganic solid material (e.g., a semiconductor such as silicon or germanium) in the area of the writing electrode.
摘要翻译: 提供了形成无机纳米结构的方法。 这些方法通过将位于衬底上方的纳米级的写入电极(例如,导电“印模”)定位,使得前体在两者之间,形成无机纳米结构。 在写入电极和衬底之间施加电场,电压偏置,离子电流或电子电流在写入电极的区域中将前体转化为无机固体材料(例如半导体,例如硅或锗) 。
-