公开(公告)号：US07923896B2

公开(公告)日：2011-04-12

申请号：US12813589

申请日：2010-06-11

申请人： Tetsuya Kimura ,  Michio Kadota ,  Mari Yaoi

发明人： Tetsuya Kimura ,  Michio Kadota ,  Mari Yaoi

IPC分类号： H03H9/25 ,  H01L41/047

CPC分类号： H03H9/02559 ,  H03H9/14538

摘要： A surface acoustic wave device including an SiO film has improved frequency temperature characteristics, prevents an increase in insertion loss, obtains a reflection coefficient of an electrode that is sufficiently high, and achieves more preferable resonant characteristics and filter characteristics. The surface acoustic wave device includes a LiNbO3 substrate having a plurality of grooves formed in an upper surface thereof, an IDT electrode primarily composed of Pt provided in the grooves, a SiO2 layer arranged so as to cover the upper surface of the LiNbO3 substrate and the IDT electrode, a surface of the SiO2 layer is planarized, a response of a Rayleigh wave is utilized, and Euler angles of the LiNbO3 substrate are in a range of (0°±5°, 208° to 228°, 0°±5°).

摘要翻译： 包括SiO膜的表面声波器件具有改善的频率温度特性，防止插入损耗增加，获得足够高的电极的反射系数，并且实现更优选的谐振特性和滤波器特性。 声表面波装置包括：LiNbO 3基板，其上表面具有多个槽，主要由设置在槽中的Pt构成的IDT电极，覆盖LiNbO 3基板的上表面的SiO 2层， IDT电极，SiO 2层的表面平坦化，利用瑞利波的响应，LiNbO 3基板的欧拉角在（0°±5°，208°〜228°，0°±5°）的范围内 °）。

公开(公告)号：US07626313B2

公开(公告)日：2009-12-01

申请号：US12341259

申请日：2008-12-22

申请人： Mari Yaoi ,  Tetsuya Kimura ,  Michio Kadota

发明人： Mari Yaoi ,  Tetsuya Kimura ,  Michio Kadota

IPC分类号： H01L41/08 ,  H03H9/145

CPC分类号： H03H3/08 ,  H03H9/02559

摘要： A surface acoustic wave device includes a LiNbO3 substrate having a plurality of grooves formed in the upper surface thereof, an IDT electrode formed by filling the grooves with a metal, and a SiO2 layer arranged to cover an upper surface of the LiNbO3 substrate and the IDT electrode and having a substantially flat surface. The surface acoustic wave device uses a response of a Rayleigh wave. The LiNbO3 substrate has Euler angles in the range of (0°±5°, 180° to 247°, 0°±5°).

摘要翻译： 表面声波装置包括：LiNbO 3基板，其上表面具有多个槽，通过用金属填充槽形成的IDT电极和覆盖LiNbO 3基板的上表面的IDT和IDT 电极并具有基本平坦的表面。 表面声波装置使用瑞利波的响应。 LiNbO3基板在（0°±5°，180°至247°，0°±5°）的范围内具有欧拉角。

公开(公告)号：US08169121B2

公开(公告)日：2012-05-01

申请号：US13161029

申请日：2011-06-15

申请人： Tetsuya Kimura ,  Michio Kadota

发明人： Tetsuya Kimura ,  Michio Kadota

IPC分类号： H03H9/25 ,  H01L41/04

CPC分类号： H03H9/02559 ,  H03H9/14541

摘要： A surface acoustic wave device has a large electromechanical coupling coefficient, a low insertion loss, and high resistance to static electricity. In the surface acoustic wave device, a piezoelectric substance includes a plurality of grooves. Each electrode finger of an IDT electrode includes a first electrode layer disposed in the grooves and a second electrode layer disposed on the first electrode layer and located at a position higher than the upper opening of the grooves. In a surface acoustic wave device, the one-half power of the product of the cube of the average density (ρa) of the first electrode layer and the average stiffness (C44a) of the first electrode layer [(ρa3×C44a)1/2] is larger than the one-half power of the product of the cube of the average density (ρb) of the second electrode layer and the average stiffness (C44b) of the second electrode layer [(ρb3×C44b)1/2].

摘要翻译： 表面声波器件具有大的机电耦合系数，低插入损耗和高抗静电能力。 在声表面波装置中，压电体包括多个槽。 IDT电极的每个电极指包括设置在槽中的第一电极层和设置在第一电极层上并位于比槽的上开口高的位置的第二电极层。 在声表面波装置中，第一电极层的平均密度（μr）和立方体的乘积的二次幂与第一电极层的平均刚度（C44a）[（＆rgr; a3× C44a）1/2]大于第二电极层的平均密度（＆rgr; b）的立方体的乘积的半功率和第二电极层的平均刚度（C44b）[（＆rgr; b3×C44b）1/2]。

公开(公告)号：US07109634B2

公开(公告)日：2006-09-19

申请号：US10734228

申请日：2003-12-15

申请人： Takeshi Nakao ,  Kenji Nishiyama ,  Tetsuya Kimura ,  Michio Kadota

发明人： Takeshi Nakao ,  Kenji Nishiyama ,  Tetsuya Kimura ,  Michio Kadota

IPC分类号： H03H9/25

CPC分类号： H03H9/02834 ,  H03H9/02677

摘要： A surface acoustic wave device with improved reflection characteristics, in which an insulating film is formed so as to cover an electrode film, and the electrode film is made from Al or an Al alloy, includes a piezoelectric substrate, an electrode film which is formed of Al or an alloy including Al as a major component on the piezoelectric substrate and which defines at least one interdigital transducer, and an insulating film arranged on the piezoelectric substrate so as to cover the electrode film, the average density of the electrode film is less than or equal to about 1.5 times the density of the insulating film, wherein the top surface of the insulating film is planarized.

摘要翻译： 具有改善的反射特性的表面声波器件，其中形成绝缘膜以覆盖电极膜，并且所述电极膜由Al或Al合金制成，包括压电基片，电极膜，由 Al或包含Al作为主要成分的合金，并且限定至少一个叉指换能器，以及布置在压电基板上以覆盖电极膜的绝缘膜，电极膜的平均密度小于 或等于绝缘膜密度的约1.5倍，其中绝缘膜的顶表面被平坦化。

公开(公告)号：US07956512B2

公开(公告)日：2011-06-07

申请号：US12825520

申请日：2010-06-29

申请人： Michio Kadota ,  Tetsuya Kimura

发明人： Michio Kadota ,  Tetsuya Kimura

IPC分类号： H01L41/04 ,  H03H9/25

CPC分类号： H03H9/02559 ,  H03H9/14538

摘要： A surface acoustic wave device includes a LiNbO3 substrate and is constructed such that the reflection coefficient of an IDT is not only high but the electromechanical coupling coefficient K2 is also high, and the range of Euler angles of the LiNbO3 substrate can be increased to realize a wide range of the electromechanical coupling coefficient K2. A plurality of grooves are provided in an upper surface of the LiNbO3 substrate, an IDT including a plurality of electrode fingers is provided by filling a metal material in the plurality of grooves, and the metal material is Pt or W or an alloy primarily including at least one Pt or W.

摘要翻译： 表面声波装置包括LiNbO 3基板，并且被构造为使得IDT的反射系数不仅高，而且机电耦合系数K2也高，并且可以增加LiNbO 3基板的欧拉角的范围，以实现 机电耦合系数K2范围广。 在LiNbO 3基板的上表面设置有多个槽，通过在多个槽中填充金属材料来形成包含多个电极指的IDT，金属材料为Pt或W，或主要包含在 至少一个Pt或W.

公开(公告)号：US07902718B2

公开(公告)日：2011-03-08

申请号：US12862843

申请日：2010-08-25

申请人： Michio Kadota ,  Tetsuya Kimura

发明人： Michio Kadota ,  Tetsuya Kimura

IPC分类号： H01L41/08

CPC分类号： H03H9/0222 ,  H03H3/08 ,  H03H9/02559 ,  H03H9/02661 ,  H03H9/02834

摘要： A boundary acoustic wave device includes a LiNbO3 substrate having a plurality of grooves provided in the upper surface thereof, electrode layers which are defined by a metal material filled in the grooves and which include IDT electrodes, and a dielectric layer, such as a SiO2 layer, provided over the upper surface of the piezoelectric substrate and the electrodes. The upper surface of the dielectric layer is flat or substantially flat. The thickness of the electrodes, θ of the Euler angles (0°, θ, −45° to +45°) of the LiNbO3 substrate, and the thickness of the dielectric layer are within any of the ranges shown in Table 1.

公开(公告)号：US07888841B2

公开(公告)日：2011-02-15

申请号：US12420944

申请日：2009-04-09

申请人： Michio Kadota ,  Tetsuya Kimura

发明人： Michio Kadota ,  Tetsuya Kimura

IPC分类号： H01L41/08

CPC分类号： H03H9/0222 ,  H03H3/08 ,  H03H9/02559 ,  H03H9/02661 ,  H03H9/02834

摘要： A boundary acoustic wave device includes a LiNbO3 substrate having a plurality of grooves provided in the upper surface thereof, electrode layers which are defined by a metal material filled in the grooves and which include IDT electrodes, and a dielectric layer, such as a SiO2 layer, provided over the upper surface of the piezoelectric substrate and the electrodes. The upper surface of the dielectric layer is flat or substantially flat. The thickness of the electrodes, θ of the Euler angles (0°, θ, −45° to +45°) of the LiNbO3 substrate, and the thickness of the dielectric layer are within any of the ranges shown in Table 1.

摘要翻译： 声界面波装置包括具有设置在其上表面的多个槽的LiNbO 3基板，由填充在槽中的金属材料限定并且包括IDT电极的电极层，以及介电层，例如SiO 2层 设置在压电基板的上表面和电极上。 电介质层的上表面是平坦的或基本平坦的。 电极的厚度， 的欧拉角（0°，...，-45°至+ 45°），介电层的厚度在表1所示的范围内。

公开(公告)号：US20090189483A1

公开(公告)日：2009-07-30

申请号：US12420944

申请日：2009-04-09

申请人： Michio Kadota ,  Tetsuya Kimura

发明人： Michio Kadota ,  Tetsuya Kimura

IPC分类号： H01L41/047

CPC分类号： H03H9/0222 ,  H03H3/08 ,  H03H9/02559 ,  H03H9/02661 ,  H03H9/02834

摘要： A boundary acoustic wave device includes a LiNbO3 substrate having a plurality of grooves provided in the upper surface thereof, electrode layers which are defined by a metal material filled in the grooves and which include IDT electrodes, and a dielectric layer, such as a SiO2 layer, provided over the upper surface of the piezoelectric substrate and the electrodes. The upper surface of the dielectric layer is flat or substantially flat. The thickness of the electrodes, θ of the Euler angles (0°, θ, −45° to +45°) of the LiNbO3 substrate, and the thickness of the dielectric layer are within any of the ranges shown in Table 1.

摘要翻译： 声界面波装置包括具有设置在其上表面的多个槽的LiNbO 3基板，由填充在槽中的金属材料限定并且包括IDT电极的电极层，以及介电层，例如SiO 2层 设置在压电基板的上表面和电极上。 电介质层的上表面是平坦的或基本平坦的。 电极的厚度，LiNbO 3衬底的欧拉角（0°，θ，-45°至+ 45°）以及介电层的厚度在表1所示的范围内。

公开(公告)号：US07956511B2

公开(公告)日：2011-06-07

申请号：US12825517

申请日：2010-06-29

申请人： Michio Kadota ,  Tetsuya Kimura

发明人： Michio Kadota ,  Tetsuya Kimura

IPC分类号： H01L41/04 ,  H03H9/25

CPC分类号： H03H9/02559 ,  H03H9/14538

摘要： A surface acoustic wave device includes a LiNbO3 substrate and is constructed such that a reflection coefficient of an IDT is not only high but the electromechanical coupling coefficient K2 is also high, and the range of Euler angles of the LiNbO3 substrate which obtains a wide range of the electromechanical coupling coefficient K2 is increased. A plurality of grooves are provided in the upper surface of the LiNbO3 substrate, and an IDT including a plurality of electrode fingers is provided and defined by a metal material filled in the plurality of grooves, and the metal material is made of Ag, Ni, or Cr or an alloy primarily including at least one Ag, Ni, or Cr.

摘要翻译： 表面声波装置包括LiNbO 3基板，并且被构造为使得IDT的反射系数不仅高，而且机电耦合系数K2也高，并且获得宽范围的LiNbO 3基板的欧拉角范围 机电耦合系数K2增加。 在LiNbO 3基板的上表面设置有多个槽，并且由填充在多个槽中的金属材料形成并限定包括多个电极指的IDT，金属材料由Ag，Ni， 或Cr或主要包含至少一种Ag，Ni或Cr的合金。

公开(公告)号：US20100259129A1

公开(公告)日：2010-10-14

申请号：US12825520

申请日：2010-06-29

申请人： Michio Kadota ,  Tetsuya KIMURA

发明人： Michio Kadota ,  Tetsuya KIMURA

IPC分类号： H01L41/047

CPC分类号： H03H9/02559 ,  H03H9/14538

摘要： A surface acoustic wave device includes a LiNbO3 substrate and is constructed such that the reflection coefficient of an IDT is not only high but the electromechanical coupling coefficient K2 is also high, and the range of Euler angles of the LiNbO3 substrate can be increased to realize a wide range of the electromechanical coupling coefficient K2. A plurality of grooves are provided in an upper surface of the LiNbO3 substrate, an IDT including a plurality of electrode fingers is provided by filling a metal material in the plurality of grooves, and the metal material is Pt or W or an alloy primarily including at least one Pt or W.

摘要翻译： 表面声波装置包括LiNbO 3基板，并且被构造为使得IDT的反射系数不仅高，而且机电耦合系数K2也高，并且可以增加LiNbO 3基板的欧拉角的范围，以实现 机电耦合系数K2范围广。 在LiNbO 3基板的上表面设置有多个槽，通过在多个槽中填充金属材料来形成包含多个电极指的IDT，金属材料为Pt或W，或主要包含在 至少一个Pt或W.