公开(公告)号：US07388418B2

公开(公告)日：2008-06-17

申请号：US11337818

申请日：2006-01-23

Applicant: Marius Reffay

Inventor： Marius Reffay

IPC: H01L35/00

CPC classification number: G05F3/245

Abstract: A circuit generates a reference voltage that is independent of temperature. The circuit is built on a substrate according to a CMOS technology, and includes a first stage for generating a first current proportional to temperature and a second stage for generating a second current inversely proportional to temperature. These first and second currents are summed in a resistor connected to a voltage distinct from the ground of the first and second stages and formed by the voltage of the substrate on which the circuit is built.

Abstract translation: 电路产生独立于温度的参考电压。 电路根据CMOS技术构建在衬底上，并且包括用于产生与温度成比例的第一电流的第一级和用于产生与温度成反比的第二电流的第二级。 这些第一和第二电流在连接到不同于第一和第二级的地的电压的电阻器中相加，并且由其上构建电路的衬底的电压形成。

公开(公告)号：US5936471A

公开(公告)日：1999-08-10

申请号：US893247

申请日：1997-07-15

Applicant: Marius Reffay ,  Michel Barou

Inventor： Marius Reffay ,  Michel Barou

IPC: G05F3/26 ,  H03F3/345 ,  H03F3/16

CPC classification number: H03F3/345 ,  G05F3/267

Abstract: The present invention relates to a current amplifier including a first MOS transistor with a drain defining a first terminal for controlling the amplifier with a current and a source connected to a first supply line. It also includes a second MOS transistor with a drain forming a terminal of current output of the amplifier and a source connected to the first supply line, and at least one first bipolar transistor having a base connected to the first control terminal, an emitter connected to a gate of the first MOS transistor and is, via a first biasing resistor, connected to the first supply line and having a collector of the first bipolar transistor being connected to a second supply line.

Abstract translation: 电流放大器技术领域本发明涉及一种电流放大器，包括：第一MOS晶体管，漏极限定第一端子，用于控制放大器，其电流和源极连接到第一电源线。 它还包括第二MOS晶体管，其漏极形成放大器的电流输出的端子，以及连接到第一电源线的源极和至少一个具有连接到第一控制端子的基极的第一双极晶体管，发射极连接到 第一MOS晶体管的栅极，并且经由第一偏置电阻器连接到第一电源线，并且具有连接到第二电源线的第一双极晶体管的集电极。

公开(公告)号：US6016079A

公开(公告)日：2000-01-18

申请号：US16606

申请日：1998-01-30

Applicant: Marius Reffay

Inventor： Marius Reffay

IPC: H03F1/32 ,  H03F3/45 ,  H03F1/14

CPC classification number: H03F1/3217

Abstract: A power amplifier device is disclosed, comprising a differential amplifier with determined transconductance followed by an intermediate amplification stage with a compensation capacitor between its output and its input and a push-pull output amplifier under low output impedance, for which the common point of connection between an upper stage and a lower stage gives an output of the device. A feedback loop between the output and the differential amplifier is provided in order to temporarily increase the transconductance of the differential amplifier at the passage of the conduction from one stage to the other stage of the push-pull amplifier.

Abstract translation: 公开了一种功率放大器装置，其包括具有确定的跨导的差分放大器，随后是具有在其输出端与其输入端之间的补偿电容器的中间放大级和在低输出阻抗下的推挽输出放大器之间的公共连接点 上级和下级给出装置的输出。 提供输出和差分放大器之间的反馈环路，以便在导通从推挽放大器的一级传递到另一级的过程中暂时增加差分放大器的跨导。

公开(公告)号：US5910748A

公开(公告)日：1999-06-08

申请号：US893248

申请日：1997-07-16

Applicant: Marius Reffay ,  Danika Chaussy

Inventor： Marius Reffay ,  Danika Chaussy

IPC: H03F3/30 ,  H03F3/345 ,  H03K17/60

CPC classification number: H03F3/345 ,  H03F3/3001

Abstract: The present invention relates to a power amplifier having an output stage in MOS technology, including an upper half-output stage comprised of two P-channel MOS power transistors mounted as a current mirror, a lower half-output stage comprised of two N-channel MOS power transistors mounted as a current mirror, an output terminal of the amplifier corresponding to the common drains of a first MOS transistor of the upper stage and of a first MOS transistor of the lower stage, and a control stage in bipolar technology for setting, according to a control voltage, two control currents of the half-output stages.

Abstract translation: 本发明涉及具有MOS技术的输出级的功率放大器，包括由安装为电流镜的两个P沟道MOS功率晶体管组成的上半部分输出级，由两个N沟道 作为电流镜安装的MOS功率晶体管，与上级的第一MOS晶体管和下级的第一MOS晶体管的公共漏极对应的放大器的输出端子，以及用于设定的双极技术的控制级， 根据控制电压，半输出级的两个控制电流。

公开(公告)号：US20060176086A1

公开(公告)日：2006-08-10

申请号：US11337818

申请日：2006-01-23

Applicant: Marius Reffay

Inventor： Marius Reffay

IPC: H03K5/153

CPC classification number: G05F3/245

Abstract: A circuit generates a reference voltage that is independent of temperature. The circuit is built on a substrate according to a CMOS technology, and includes a first stage for generating a first current proportional to temperature and a second stage for generating a second current inversely proportional to temperature. These first and second currents are summed in a resistor connected to a voltage distinct from the ground of the first and second stages and formed by the voltage of the substrate on which the circuit is built.

Abstract translation: 电路产生独立于温度的参考电压。 电路根据CMOS技术构建在衬底上，并且包括用于产生与温度成比例的第一电流的第一级和用于产生与温度成反比的第二电流的第二级。 这些第一和第二电流在连接到不同于第一和第二级的地的电压的电阻器中相加，并且由其上构建电路的衬底的电压形成。

公开(公告)号：US06784739B2

公开(公告)日：2004-08-31

申请号：US10245842

申请日：2002-09-17

Applicant: Marius Reffay ,  Michel Barou

Inventor： Marius Reffay ,  Michel Barou

IPC: H03F318

CPC classification number: H03F1/308 ,  H03F1/3217

Abstract: A class AB amplifier circuit includes a complementary output stage and a biasing circuit for biasing the output stage. The complementary output stage includes a P-type MOS transistor and an N-type MOS transistor, and the biasing circuit includes a bipolar transistor. The emitter and collector of the bipolar transistor are respectively connected to the gates of the P-type and N-type MOS transistors. The bipolar transistor is biased for controlling a bias voltage between the respective gates of the P-type and N-type MOS transistors.

Abstract translation: AB类放大器电路包括互补输出级和用于偏置输出级的偏置电路。 互补输出级包括P型MOS晶体管和N型MOS晶体管，偏置电路包括双极晶体管。 双极晶体管的发射极和集电极分别连接到P型和N型MOS晶体管的栅极。 双极晶体管被偏置用于控制P型和N型MOS晶体管的各个栅极之间的偏置电压。

公开(公告)号：US06407624B2

公开(公告)日：2002-06-18

申请号：US09808733

申请日：2001-03-14

Applicant: Michel Barou ,  Marius Reffay

Inventor： Michel Barou ,  Marius Reffay

IPC: G05F302

CPC classification number: G05F3/247 ,  G05F3/227

Abstract: A circuit for providing a reference voltage, including a first transistor of bipolar type, the emitter of which provides the reference voltage and the collector of which is connected to a first supply pole, a second MOS-type transistor, the drain of which is connected to the base of the first transistor and the source of which is connected to a second supply pole, a control block, an output of which is connected to the gate of the second transistor and an input of which is connected to the emitter of the first transistor, a capacitor connected to the output of the control block and coupled to the first supply pole via a first impedance, and a second impedance connected on the one hand to the second transistor and on the other hand to the connection point between the capacitor and the first impedance.

Abstract translation: 一种用于提供参考电压的电路，包括双极型的第一晶体管，其发射极提供参考电压，其集电极连接到第一电源极，第二MOS晶体管的漏极连接 到第一晶体管的基极，其源极连接到第二电源极，控制块，其输出端连接到第二晶体管的栅极，其输入端连接到第一晶体管的发射极 晶体管，连接到控制块的输出并经由第一阻抗耦合到第一电源极的电容器，以及一方面连接到第二晶体管的第二阻抗，另一方面连接到电容器和 第一阻抗。