公开(公告)号：US08957306B2

公开(公告)日：2015-02-17

申请号：US12041490

申请日：2008-03-03

申请人： Mark A. Stan ,  Nein Y. Li ,  Frank A. Spadafora ,  Hong Q. Hou ,  Paul R. Sharps ,  Navid S. Fatemi

发明人： Mark A. Stan ,  Nein Y. Li ,  Frank A. Spadafora ,  Hong Q. Hou ,  Paul R. Sharps ,  Navid S. Fatemi

IPC分类号： H01L31/00 ,  H01L31/078 ,  H01L21/22 ,  H01L31/18 ,  H01L21/02

CPC分类号： H01L31/078 ,  H01L21/02381 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/2205 ,  H01L31/1852 ,  Y02E10/544

摘要： A solar cell having a first subcell including a germanium (Ge) substrate having a diffusion region doped with n-type dopants including phosphorus and arsenic, wherein the upper portion of such diffusion region has a higher concentration of phosphorus (P) atoms than arsenic (As) atoms, and a second subcell including a layer of either gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) disposed over the substrate.

摘要翻译： 一种具有第一子电池的太阳能电池，所述第一子电池包括具有掺杂有磷和砷的n型掺杂剂的扩散区的锗（Ge）基板，其中所述扩散区域的上部具有比砷更高的磷（P）原子浓度（ As）原子，以及包括设置在衬底上的砷化镓（GaAs）或砷化铟镓（InGaAs）的层的第二子电池。

公开(公告)号：US20100240171A1

公开(公告)日：2010-09-23

申请号：US12756799

申请日：2010-04-08

申请人： Mark A. Stan ,  Nein Y. Li ,  Frank A. Spadafora ,  Hong Q. Hou ,  Paul R. Sharps ,  Navid S. Fatemi

发明人： Mark A. Stan ,  Nein Y. Li ,  Frank A. Spadafora ,  Hong Q. Hou ,  Paul R. Sharps ,  Navid S. Fatemi

IPC分类号： H01L31/18 ,  H01L21/22

CPC分类号： H01L31/078 ,  H01L21/02381 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/2205 ,  H01L31/1852 ,  Y02E10/544

摘要： A multijunction solar cell is fabricated according to an embodiment by providing a substrate, depositing a nucleation first layer over and directly in contact with the substrate, depositing a second layer containing an arsenic dopant over the nucleation layer and depositing a sequence of layers over the second layer forming at least one solar subcell. The nucleation layer serves as a diffusion barrier to the arsenic dopant such that diffusion of the arsenic dopant into the substrate is limited in depth by the nucleation layer.

摘要翻译： 根据实施例，通过提供衬底，在基底上沉积成核第一层并直接与衬底接触来制造多结太阳能电池，在成核层上沉积含有砷掺杂剂的第二层，并在第二层上沉积一层层 层形成至少一个太阳能子电池。 成核层用作砷掺杂剂的扩散阻挡层，使得砷掺杂剂扩散到衬底中通过成核层的深度受到限制。

公开(公告)号：US08859886B2

公开(公告)日：2014-10-14

申请号：US12756799

申请日：2010-04-08

申请人： Mark A. Stan ,  Nein Y. Li ,  Frank A. Spadafora ,  Hong Q. Hou ,  Paul R. Sharps ,  Navid S. Fatemi

发明人： Mark A. Stan ,  Nein Y. Li ,  Frank A. Spadafora ,  Hong Q. Hou ,  Paul R. Sharps ,  Navid S. Fatemi

IPC分类号： H01L31/00 ,  H01L31/078 ,  H01L21/22 ,  H01L31/18 ,  H01L21/02

CPC分类号： H01L31/078 ,  H01L21/02381 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/2205 ,  H01L31/1852 ,  Y02E10/544

摘要： Methods of fabricating multijunction solar cells that may include providing a substrate, and depositing a nucleation first layer over and directly in contact with the substrate. The methods may also include depositing a second layer containing an arsenic dopant over the nucleation layer. The nucleation layer may serve as a diffusion barrier to the arsenic dopant such that diffusion of the arsenic dopant into the substrate is limited in depth by the nucleation layer. The methods may also include depositing a sequence of layers over the second layer forming at least one solar subcell.

摘要翻译： 制造可以包括提供衬底的多结太阳能电池的方法，以及在基底上沉积和直接与衬底接触的成核第一层。 所述方法还可以包括在成核层上沉积含有砷掺杂剂的第二层。 成核层可以用作砷掺杂剂的扩散阻挡层，使得砷掺杂剂进入衬底的扩散受成核层的深度限制。 所述方法还可以包括在形成至少一个太阳能子电池的第二层上沉积层序列。

公开(公告)号：US07629240B2

公开(公告)日：2009-12-08

申请号：US11143516

申请日：2005-06-02

申请人： Mark A. Stan ,  Nein Y. Li ,  Frank A. Spadafora ,  Hong Q. Hou ,  Paul R. Sharps ,  Navid S. Fatemi

发明人： Mark A. Stan ,  Nein Y. Li ,  Frank A. Spadafora ,  Hong Q. Hou ,  Paul R. Sharps ,  Navid S. Fatemi

IPC分类号： H01L21/22

CPC分类号： H01L31/078 ,  H01L21/02381 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/2205 ,  H01L31/1852 ,  Y02E10/544

摘要： Dopant diffusion into semiconductor material is controlled during fabrication of a semiconductor structure by depositing a nucleation layer over a first layer of the semiconductor structure and depositing a device layer containing the dopant over the nucleation layer. The nucleation layer serves as a diffusion barrier by limiting in depth the diffusion of the dopant into the first layer. The dopant can include arsenic (As).

摘要翻译： 通过在半导体结构的第一层上沉积成核层并在成核层上沉积含有掺杂剂的器件层，在制造半导体结构期间控制掺入半导体材料的掺杂剂扩散。 成核层通过限制掺杂剂向第一层的扩散而作为扩散阻挡层。 掺杂剂可以包括砷（As）。

公开(公告)号：US20080149177A1

公开(公告)日：2008-06-26

申请号：US12041490

申请日：2008-03-03

申请人： Mark A. Stan ,  Nein Y. Li ,  Frank A. Spadafora ,  Hong Q. Hou ,  Paul R. Sharps ,  Navid S. Fatemi

发明人： Mark A. Stan ,  Nein Y. Li ,  Frank A. Spadafora ,  Hong Q. Hou ,  Paul R. Sharps ,  Navid S. Fatemi

IPC分类号： H01L31/06 ,  H01L31/0216

CPC分类号： H01L31/078 ,  H01L21/02381 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/2205 ,  H01L31/1852 ,  Y02E10/544

摘要： Apparatus and Method for Optimizing the Efficiency of Germanium Junctions in Multi-Junction Solar Cells. In a preferred embodiment, an indium gallium phosphide (InGaP) nucleation layer is disposed between the germanium (Ge) substrate and the overlying dual-junction epilayers for controlling the diffusion depth of the n-doping in the germanium junction. Specifically, by acting as a diffusion barrier to arsenic (As) contained in the overlying epilayers and as a source of n-type dopant for forming the germanium junction, the nucleation layer enables the growth time and temperature in the epilayer device process to be minimized without compromising the integrity of the dual-junction epilayer structure. This in turn allows the arsenic diffusion into the germanium substrate to be optimally controlled by varying the thickness of the nucleation layer. An active germanium junction formed in accordance with the present invention has a typical diffused junction depth that is ⅕ to ½ of that achievable in prior art devices. Furthermore, triple-junction solar cells incorporating a shallow n-p germanium junction of the present invention can attain 1 sun AMO efficiencies in excess of 26%.

摘要翻译： 用于优化多结太阳能电池中锗结的效率的装置和方法。 在优选实施例中，铟锗磷（InGaP）成核层设置在锗（Ge）衬底和上覆的双结外延层之间，用于控制锗结中的n掺杂的扩散深度。 具体地说，通过作为包含在上覆外延层中的砷（As）的扩散阻挡层，并且作为用于形成锗结的n型掺杂剂的源，成核层使外延层器件工艺中的生长时间和温度最小化 而不损害双结外延层结构的完整性。 这又允许通过改变成核层的厚度来最佳地控制砷扩散到锗衬底中。 根据本发明形成的活性锗结具有典型的扩散结深度，其为现有技术装置中可实现的1/5至1/2。 此外，结合本发明的浅n-p锗结的三结太阳能电池可以获得超过26％的1个太阳AMO效率。

公开(公告)号：US07339109B2

公开(公告)日：2008-03-04

申请号：US09885319

申请日：2001-06-19

申请人： Mark A. Stan ,  Nein Y. Li ,  Frank A. Spadafora ,  Hong Q. Hou ,  Paul R. Sharps ,  Navid S. Fatemi

发明人： Mark A. Stan ,  Nein Y. Li ,  Frank A. Spadafora ,  Hong Q. Hou ,  Paul R. Sharps ,  Navid S. Fatemi

IPC分类号： H01L31/0216 ,  H01L31/0256

CPC分类号： H01L31/078 ,  H01L21/02381 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/2205 ,  H01L31/1852 ,  Y02E10/544

摘要： Apparatus and Method for Optimizing the Efficiency of Germanium Junctions in Multi-Junction Solar Cells. In a preferred embodiment, an indium gallium phosphide (InGaP) nucleation layer is disposed between the germanium (Ge) substrate and the overlying dual-junction epilayers for controlling the diffusion depth of the n-doping in the germanium junction. Specifically, by acting as a diffusion barrier to arsenic (As) contained in the overlying epilayers and as a source of n-type dopant for forming the germanium junction, the nucleation layer enables the growth time and temperature in the epilayer device process to be minimized without compromising the integrity of the dual-junction epilayer structure. This in turn allows the arsenic diffusion into the germanium substrate to be optimally controlled by varying the thickness of the nucleation layer. An active germanium junction formed in accordance with the present invention has a typical diffused junction depth that is ⅕ to ½ of that achievable in prior art devices. Furthermore, triple-junction solar cells incorporating a shallow n-p germanium junction of the present invention can attain 1 sun AM0 efficiencies in excess of 26%.

摘要翻译： 用于优化多结太阳能电池中锗结的效率的装置和方法。 在优选实施例中，铟锗磷（InGaP）成核层设置在锗（Ge）衬底和上覆的双结外延层之间，用于控制锗结中n掺杂的扩散深度。 具体地说，通过作为包含在上覆外延层中的砷（As）的扩散阻挡层，并且作为用于形成锗结的n型掺杂剂的源，成核层使外延层器件工艺中的生长时间和温度最小化 而不损害双结外延层结构的完整性。 这又允许通过改变成核层的厚度来最佳地控制砷扩散到锗衬底中。 根据本发明形成的活性锗结具有典型的扩散结深度，其为现有技术装置中可实现的1/5至1/2。 此外，结合本发明的浅n-p锗结的三结太阳能电池可以获得超过26％的1个太阳AM0效率。