Nanoscale crystalline silicon powder
    2.
    发明授权
    Nanoscale crystalline silicon powder 有权
    纳米级结晶硅粉

    公开(公告)号:US08043593B2

    公开(公告)日:2011-10-25

    申请号:US12759346

    申请日:2010-04-13

    IPC分类号: C01B33/02 C01B33/029

    摘要: An aggregated crystalline silicon powder with a BET surface area of 20 to 150 m2/g is provided. The aggregated silicon powder may be doped with phosphorus, arsenic, antimony, bismuth, boron, aluminium, gallium, indium, thallium, europium, erbium, cerium, praseodymium, neodymium, samarium, gadolinium, terbium, dysprosium, holmium, thulium, lutetium, lithium, ytterbium, germanium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, silver, gold, or zinc.

    摘要翻译: 提供BET表面积为20-150m2 / g的聚集的结晶硅粉末。 聚集的硅粉末可以掺杂有磷,砷,锑,铋,硼,铝,镓,铟,铊,铕,铒,铈,镨,钕,钐,钆,铽,镝,钬,ium,镥, 锂,镱,锗,铁,钌,锇,钴,铑,铱,镍,钯,铂,铜,银,金或锌。

    Nanoscale crystalline silicon powder
    3.
    发明授权
    Nanoscale crystalline silicon powder 有权
    纳米级结晶硅粉

    公开(公告)号:US07776304B2

    公开(公告)日:2010-08-17

    申请号:US10579460

    申请日:2004-11-13

    摘要: Aggregated crystalline silicon powder with a BET surface area of 20 to 150 m2/g. It is prepared by subjecting at least one vaporous or gaseous silane and optionally at least one vaporous or gaseous doping material, an inert gas and hydrogen to heat in a hot wall reactor, cooling the reaction mixture or allowing the reaction mixture to cool and separating the product from gaseous substances in the form of a powder, wherein the proportion of silane is between 0.1 and 90 wt. %, with respect to the sum of silane, doping material, hydrogen and inert gases, and wherein the proportion of hydrogen, with respect to the sum of hydrogen, silane, inert gas and doping material, is in the range 1 mol. % to 96 mol. %. It can be used to produce electronic components.

    摘要翻译: 聚合结晶硅粉末,BET表面积为20〜150m2 / g。 通过使至少一种蒸气或气态硅烷和任选的至少一种蒸气或气态掺杂材料,惰性气体和氢气在热壁反应器中加热,冷却反应混合物或使反应混合物冷却和分离 来自气态物质的粉末形式的产物,其中硅烷的比例为0.1-90wt。 相对于硅烷,掺杂材料,氢气和惰性气体的总和,其中相对于氢,硅烷,惰性气体和掺杂材料之和的氢的比例在1mol的范围内。 %至96mol。 %。 它可用于生产电子元件。

    Nanoscale, crystalline silicon powder
    4.
    发明申请
    Nanoscale, crystalline silicon powder 审中-公开
    纳米级,晶体硅粉末

    公开(公告)号:US20070172406A1

    公开(公告)日:2007-07-26

    申请号:US10579762

    申请日:2004-11-13

    IPC分类号: C01B33/00

    CPC分类号: C01B33/02 C01B33/027

    摘要: Aggregated, crystalline silicon powder with a BET surface of more than 50 m2/g. The powder is produced by continuously feeding at least one vaporous or gaseous silane and optionally at least one vaporous or gaseous doping substance and an inert gas into a reactor and mixing the components there, wherein the proportion of silane is between 0.1 and 90 wt. % referred to the sum total of silane, doping substance and inert gas, the mixture is caused to react by input of energy, wherein a plasma is produced by the input of energy by means of electromagnetic radiation in the microwave range at a pressure of 10 to 1100 mbar, the reaction mixture is allowed to cool and the reaction product is separated in the form of a powder from gaseous substances. The powder may be used for the production of electronic components.

    摘要翻译: 聚集的BET表面积大于50m 2 / g的结晶硅粉末。 通过将至少一种蒸气或气态硅烷和任选的至少一种蒸汽或气态掺杂物质和惰性气体连续地供入反应器并混合其中的组分来生产粉末,其中硅烷的比例为0.1-90重量%。 %是指硅烷,掺杂物质和惰性气体的总和,通过输入能量使混合物反应,其中通过在微波范围内以10的压力通过电磁辐射输入能量来产生等离子体 至1100毫巴,使反应混合物冷却,将反应产物以粉末形式从气态物质中分离。 粉末可用于生产电子元件。

    Nanoscale crystalline silicon powder
    5.
    发明申请
    Nanoscale crystalline silicon powder 有权
    纳米级结晶硅粉

    公开(公告)号:US20070094757A1

    公开(公告)日:2007-04-26

    申请号:US10579460

    申请日:2004-11-13

    IPC分类号: C07F7/00

    摘要: Aggregated crystalline silicon powder with a BET surface area of 20 to 150 m2/g. It is prepared by subjecting at least one vaporous or gaseous silane and optionally at least one vaporous or gaseous doping material, an inert gas and hydrogen to heat in a hot wall reactor, cooling the reaction mixture or allowing the reaction mixture to cool and separating the product from gaseous substances in the form of a powder, wherein the proportion of silane is between 0.1 and 90 wt.%, with respect to the sum of silane, doping material, hydrogen and inert gases, and wherein the proportion of hydrogen, with respect to the sum of hydrogen, silane, inert gas and doping material, is in the range 1 mol. % to 96 mol. %. It can be used to produce electronic components.

    摘要翻译: 聚合的结晶硅粉末,其BET表面积为20至150m 2 / g。 通过使至少一种蒸气或气态硅烷和任选的至少一种蒸气或气态掺杂材料,惰性气体和氢气在热壁反应器中加热,冷却反应混合物或使反应混合物冷却和分离 来自气态物质的粉末形式的产物,其中相对于硅烷,掺杂材料,氢气和惰性气体的总和,硅烷的比例为0.1-90重量%,并且其中氢的比例相对于 相对于氢,硅烷,惰性气体和掺杂材料的总和为1mol。 %至96mol。 %。 它可用于生产电子元件。