利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

16 条记录 (耗时 0.013 秒)

    NANOSCALE CRYSTALLINE SILICON POWDER
    8.
    发明申请
    NANOSCALE CRYSTALLINE SILICON POWDER 有权
    纳米结晶硅粉

    公开(公告)号：US20100193746A1

    公开(公告)日：2010-08-05

    申请号：US12759346

    申请日：2010-04-13

    申请人： Markus PRIDOEHL ,  Paul ROTH ,  Hartmut WIGGERS ,  Frank-Martin PETRAT ,  Michael KRAEMER

    发明人： Markus PRIDOEHL ,  Paul ROTH ,  Hartmut WIGGERS ,  Frank-Martin PETRAT ,  Michael KRAEMER

    IPC分类号： C01B33/02 ,  H01B1/04

    CPC分类号： C01B33/03 ,  C01B33/02 ,  C01B33/029 ,  Y10T428/2982

    摘要： An aggregated crystalline silicon powder with a BET surface area of 20 to 150 m2/g is provided. The aggregated silicon powder may be doped with phosphorus, arsenic, antimony, bismuth, boron, aluminium, gallium, indium, thallium, europium, erbium, cerium, praseodymium, neodymium, samarium, gadolinium, terbium, dysprosium, holmium, thulium, lutetium, lithium, ytterbium, germanium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, silver, gold, or zinc.

    摘要翻译： 提供BET表面积为20-150m2 / g的聚集的结晶硅粉末。 聚集的硅粉末可以掺杂有磷，砷，锑，铋，硼，铝，镓，铟，铊，铕，铒，铈，镨，钕，钐，钆，铽，镝，钬，ium，镥， 锂，镱，锗，铁，钌，锇，钴，铑，铱，镍，钯，铂，铜，银，金或锌。

    INTERCALATION OF SILICON AND/OR TIN INTO POROUS CARBON SUBSTRATES
    9.
    发明申请
    INTERCALATION OF SILICON AND/OR TIN INTO POROUS CARBON SUBSTRATES 有权
    将硅和/或锡与多孔碳基体的交叉

    公开(公告)号：US20110311873A1

    公开(公告)日：2011-12-22

    申请号：US13054193

    申请日：2009-07-14

    申请人： Christof Schulz ,  Hartmut Wiggers

    发明人： Christof Schulz ,  Hartmut Wiggers

    IPC分类号： H01M4/583 ,  H01M4/587 ,  H01B1/04 ,  B32B3/26 ,  B82Y30/00

    CPC分类号： C01B31/00 ,  C01B32/00 ,  H01M4/0416 ,  H01M4/0471 ,  H01M4/133 ,  H01M4/134 ,  H01M4/1393 ,  H01M4/1395 ,  H01M4/386 ,  H01M4/387 ,  H01M4/587 ,  H01M10/0525

    摘要： The invention relates to a process for producing an electrically conductive, porous, silicon- and/or tin-containing carbon material which is suitable in particular for the production of an anode material, preferably for lithium ion batteries; in a first step of the process, preferably crystalline silicon nanoparticies and/or tin nanoparticies and/or silicon/tin nanoparticles are introduced into a matrix based on at least one organic polymer, being more particular dispersed therein, and subsequently, in a second step of the process, the resultant polymer matrix containing the silicon, tin and/or silicon/tin nanoparticies is carbonized to form carbon.

    摘要翻译： 本发明涉及一种用于生产导电，多孔，含硅和/或含锡的碳材料的方法，其特别适用于生产阳极材料，优选用于锂离子电池; 在该方法的第一步中，优选将晶体硅纳米颗粒和/或锡纳米颗粒和/或硅/锡纳米颗粒基于至少一种有机聚合物引入到基质中，更具体地分散在其中，随后在第二步骤 所得到的含有硅，锡和/或硅/锡纳米颗粒的聚合物基体被碳化以形成碳。

    Porous semiconductive film and process for its production
    10.
    发明授权
    Porous semiconductive film and process for its production 有权
    多孔半导体膜及其生产工艺

    公开(公告)号：US08043909B2

    公开(公告)日：2011-10-25

    申请号：US12053369

    申请日：2008-03-21

    申请人： André Ebbers ,  Martin Trocha ,  Robert Lechner ,  Martin S. Brandt ,  Martin Stutzmann ,  Hartmut Wiggers

    发明人： André Ebbers ,  Martin Trocha ,  Robert Lechner ,  Martin S. Brandt ,  Martin Stutzmann ,  Hartmut Wiggers

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/0257 ,  H01L21/02376 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02581 ,  H01L21/0259 ,  H01L21/02614 ,  H01L21/02628 ,  H01L29/78 ,  Y10S438/96

    摘要： The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5·10−8 S·cm−1 to 10 S·cm−1, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size of 1 nm to 500 nm, the solid fraction having at least partly crystalline doped constituents which are bonded to one another via sinter necks and have sizes of 5 nm to 500 nm and a spherical and/or ellipsoidal shape, which comprise the elements silicon, germanium or an alloy of these elements, and also a process for producing a porous semiconductive structure, characterized in that A. doped semimetal particles are obtained, and then B. a dispersion is obtained from the semimetal particles obtained after step A, and then C. a substrate is coated with the dispersion obtained after step B, and then D. the layer obtained after step C is treated by means of a solution of hydrogen fluoride in water, and then E. the layer obtained after step D is treated thermally to obtain a porous semiconductive structure.

    摘要翻译： 本发明提供一种多孔半导体结构体，其特征在于，该结构的导电率为5×10 -8 S·cm -1〜10 S·cm -1，电导率为0.1〜700meV ，固体成分为30〜60体积％，孔径为1〜500nm，固体部分具有至少部分结晶的掺杂成分，其通过烧结颈部彼此结合，并且具有5nm〜 500nm，并且包括元素硅，锗或这些元素的合金的球形和/或椭圆形形状，以及制造多孔半导体结构的方法，其特征在于获得A.掺杂的半金属颗粒，然后B 从在步骤A后获得的半金属颗粒中获得分散体，然后C.将基材涂布在步骤B之后获得的分散液中，然后D.将步骤C后获得的层用氟化氢溶液 在水中，然后E.在步骤D之后获得的层被热处理以获得多孔半导体结构。