Radio frequency power amplifier
    1.
    发明申请
    Radio frequency power amplifier 有权
    射频功率放大器

    公开(公告)号:US20070096809A1

    公开(公告)日:2007-05-03

    申请号:US11499650

    申请日:2006-08-07

    IPC分类号: H03F3/68

    CPC分类号: H03F1/32 H03F3/68

    摘要: A bias voltage is applied via a first resistance to the base of a first transistor, and a radio frequency signal is input via a first capacitor to the base of the first transistor. The bias voltage is applied via a second resistance to the base of a second transistor. The bias voltage is applied via a third resistance to the base of a third transistor, and the radio frequency signal RF is input via a third capacitor to the base of the third transistor. A first band rejection filter is provided between the base of the first transistor and the base of the second transistor. A second band rejection filter is provided between the base of the second transistor and the base of the third transistor. The collectors of the first to third transistors are connected in common and the emitters thereof are all grounded.

    摘要翻译: 偏置电压通过第一电阻施加到第一晶体管的基极,并且射频信号经由第一电容器输入到第一晶体管的基极。 偏置电压通过第二电阻施加到第二晶体管的基极。 偏置电压通过第三电阻施加到第三晶体管的基极,并且射频信号RF经由第三电容器输入到第三晶体管的基极。 第一带阻滤波器设置在第一晶体管的基极和第二晶体管的基极之间。 第二带阻滤波器设置在第二晶体管的基极和第三晶体管的基极之间。 第一至第三晶体管的集电极共同连接,其发射极全部接地。

    Radio frequency power amplifier
    2.
    发明授权
    Radio frequency power amplifier 有权
    射频功率放大器

    公开(公告)号:US07425872B2

    公开(公告)日:2008-09-16

    申请号:US11499650

    申请日:2006-08-07

    IPC分类号: H03F3/68 H03F3/191

    CPC分类号: H03F1/32 H03F3/68

    摘要: A bias voltage is applied via a first resistance to the base of a first transistor, and a radio frequency signal is input via a first capacitor to the base of the first transistor. The bias voltage is applied via a second resistance to the base of a second transistor. The bias voltage is applied via a third resistance to the base of a third transistor, and the radio frequency signal RF is input via a third capacitor to the base of the third transistor. A first band rejection filter is provided between the base of the first transistor and the base of the second transistor. A second band rejection filter is provided between the base of the second transistor and the base of the third transistor. The collectors of the first to third transistors are connected in common and the emitters thereof are all grounded.

    摘要翻译: 偏置电压通过第一电阻施加到第一晶体管的基极,并且射频信号经由第一电容器输入到第一晶体管的基极。 偏置电压通过第二电阻施加到第二晶体管的基极。 偏置电压通过第三电阻施加到第三晶体管的基极,并且射频信号RF经由第三电容器输入到第三晶体管的基极。 第一带阻滤波器设置在第一晶体管的基极和第二晶体管的基极之间。 第二带阻滤波器设置在第二晶体管的基极和第三晶体管的基极之间。 第一至第三晶体管的集电极共同连接,其发射极全部接地。

    RF power amplifier
    3.
    发明授权
    RF power amplifier 有权
    射频功率放大器

    公开(公告)号:US07312661B2

    公开(公告)日:2007-12-25

    申请号:US11204051

    申请日:2005-08-16

    IPC分类号: H03F3/04

    摘要: A bias current to be supplied to an amplification circuit 60 is drawn out of a collector of a transistor Q11 of a bias circuit 10. The drawn-out bias current is input to a base of a transistor Q13 via an attenuation filter F2 and is output from an emitter of the transistor Q13 in the state where the voltage thereof is reduced by a level corresponding to Vbe. The attenuation filter F2 is conducted in a DC manner, and attenuates a component of a frequency fH(=2ft−fr) defined by a transmission frequency ft and a receiving frequency fr of a radio frequency signal. The bias current output from the emitter of the transistor Q13 is supplied to the amplification circuit 60 via an attenuation filter F1. The attenuation filter F1 is conducted in a DC manner, and attenuates a component of a frequency fL(=|fr−ft|).

    摘要翻译: 将要提供给放大电路60的偏置电流从偏置电路10的晶体管Q 11的集电极引出。 引出偏置电流经由衰减滤波器F 2输入到晶体管Q13的基极,并且在其电压降低到对应于Vbe的电平的状态下从晶体管Q 13的发射极输出。 衰减滤波器F 2以直流方式传导,并且衰减由射频信号的发送频率ft和接收频率fr定义的频率fH(= 2ft-fr)的分量。 从晶体管Q13的发射极输出的偏置电流通过衰减滤波器F 1被提供给放大电路60。 衰减滤波器F 1以直流方式传导,并衰减频率fL(= | fr-ft |)的分量。

    RF power amplifier
    4.
    发明申请
    RF power amplifier 有权
    射频功率放大器

    公开(公告)号:US20060214733A1

    公开(公告)日:2006-09-28

    申请号:US11204051

    申请日:2005-08-16

    IPC分类号: H03F3/04

    摘要: A bias current to be supplied to an amplification circuit 60 is drawn out of a collector of a transistor Q11 of a bias circuit 10. The drawn-out bias current is input to a base of a transistor Q13 via an attenuation filter F2 and is output from an emitter of the transistor Q13 in the state where the voltage thereof is reduced by a level corresponding to Vbe. The attenuation filter F2 is conducted in a DC manner, and attenuates a component of a frequency fH(=2ft−fr) defined by a transmission frequency ft and a receiving frequency fr of a radio frequency signal. The bias current output from the emitter of the transistor Q13 is supplied to the amplification circuit 60 via an attenuation filter attenuates a component of a frequency fL(=|fr−ft|).

    摘要翻译: 要提供给放大电路60的偏置电流从偏置电路10的晶体管Q 11的集电极引出。所提取的偏置电流经由衰减滤波器F 2输入到晶体管Q 13的基极 并且在其电压降低到对应于Vbe的电平的状态下从晶体管Q 13的发射极输出。 衰减滤波器F 2以直流方式传导,并且衰减由射频信号的发送频率ft和接收频率fr定义的频率fH(= 2ft-fr)的分量。 从晶体管Q13的发射极输出的偏置电流通过衰减滤波器提供给放大电路60,衰减频率fL(= | fr-ft |)的分量。