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公开(公告)号：US5514257A
公开(公告)日：1996-05-07
申请号：US305837
申请日：1994-09-14
CPC分类号： H01J37/3455 , C23C14/0641 , C23C14/165 , C23C14/564 , C23C14/568 , H01J37/3408
摘要： A method for forming Ti--TiN laminates adapted to reduce the formation of dust particles harmful to semiconductor devices without detriment to productivity, and a magnetron cathode for performing the method are provided. Ti films and TiN films are formed through sputtering of a Ti target using a multi-chamber system comprising at least two chambers each having a magnetron cathode in which a magnet can be moved to accommodate different films. The type of film being formed in each chamber is periodically alternated to prevent a buildup of TiN film adhered to the inner walls of the chambers which peels and causes dust particles.
摘要翻译： 提供一种用于形成适于减少对半导体器件有害的灰尘颗粒的形成而不损害生产率的Ti-TiN层压体的方法，以及用于执行该方法的磁控阴极。 使用包括至少两个室的多腔室系统通过溅射Ti靶而形成Ti膜和TiN膜，每个室具有可以移动磁体以适应不同膜的磁控阴极。 在每个室中形成的膜的类型周期性地交替，以防止粘附到室的内壁上的TiN膜的积聚，其剥落并引起灰尘颗粒。
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公开(公告)号：US5643427A
公开(公告)日：1997-07-01
申请号：US534646
申请日：1995-09-27
CPC分类号： H01J37/3455 , C23C14/0641 , C23C14/165 , C23C14/564 , C23C14/568 , H01J37/3408
摘要： A method for forming Ti--TiN laminates adapted to reduce the formation of dust particles harmful to semiconductor devices without detriment to productivity, and a magnetron cathode for performing the method are provided. Ti films and TiN films are formed through sputtering of a Ti target using a multi-chamber system comprising at least two chambers each having a magnetron cathode in which a magnet can be moved to accommodate different films. The type of film being formed in each chamber is periodically alternated to prevent a buildup of TiN film adhered to the inner walls of the chambers which peels and causes dust particles.
摘要翻译： 提供一种用于形成适于减少对半导体器件有害的灰尘颗粒的形成而不损害生产率的Ti-TiN层压体的方法，以及用于执行该方法的磁控阴极。 使用包括至少两个室的多腔室系统通过溅射Ti靶而形成Ti膜和TiN膜，每个室具有可以移动磁体以适应不同膜的磁控阴极。 在每个室中形成的膜的类型周期性地交替，以防止粘附到室的内壁上的TiN膜的积聚，其剥落并引起灰尘颗粒。
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公开(公告)号：US5728629A
公开(公告)日：1998-03-17
申请号：US311681
申请日：1994-09-23
IPC分类号： C23C16/44 , C23C16/54 , H01L21/205 , H01L21/285
CPC分类号： C23C16/4404 , Y10S438/905 , Y10S438/958
摘要： A process for forming a thin film by chemical vapor deposition which comprises repeating a substrate processing step on one or more substrates placed inside a reaction chamber by introducing a reaction gas inside the reaction chamber. The process includes a step of introducing a passivation gas or the like for passivating the surface of a thin film deposited on the fixing jig or other peripheral members between substrate processing steps. The passivation gas is, for example, an adsorbent gas or an oxidizing gas. More specifically, an example of an adsorbent gas is a mixture of an inert gas and from 0.1 to 10% of NH.sub.3 gas or SiH.sub.2 Cl.sub.2 gas, and an example of an oxidizing gas is a mixture of an inert gas and at least one selected from the group of oxygen, nitrogen, monoxide, and nitrogen dioxide. The inert gas may also be replaced with N.sub.2 gas.
摘要翻译： 一种通过化学气相沉积法形成薄膜的方法，包括通过在反应室内引入反应气体，在放置在反应室内的一个或多个基材上重复进行基板处理步骤。 该方法包括在衬底处理步骤之间引入钝化气体等以钝化沉积在固定夹具或其它周边部件上的薄膜的表面的步骤。 钝化气体例如是吸附气体或氧化气体。 更具体地，吸附气体的实例是惰性气体和0.1至10％的NH 3气体或SiH 2 Cl 2气体的混合物，氧化气体的实例是惰性气体和选自以下的至少一种的混合物： 一组氧气，氮气，一氧化氮和二氧化氮。 惰性气体也可以用N 2气体代替。
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