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    MEMORY CONTROLLER, NONVOLATILE MEMORY DEVICE, AND NONVOLATILE MEMORY SYSTEM
    1.
    发明申请
    MEMORY CONTROLLER, NONVOLATILE MEMORY DEVICE, AND NONVOLATILE MEMORY SYSTEM 审中-公开
    内存控制器，非易失性存储器件和非易失性存储器系统

    公开(公告)号：US20100318723A1

    公开(公告)日：2010-12-16

    申请号：US12526089

    申请日：2008-01-29

    申请人： Masahiro Nakanishi ,  Tetsushi Kasahara ,  Takefumi Sugai ,  Hironori Mori ,  Kunihiro Maki ,  Kazuaki Tamura

    发明人： Masahiro Nakanishi ,  Tetsushi Kasahara ,  Takefumi Sugai ,  Hironori Mori ,  Kunihiro Maki ,  Kazuaki Tamura

    IPC分类号： G06F12/00 ,  G06F12/02

    CPC分类号： G06F12/0246

    摘要： A nonvolatile memory device includes a plurality of memory controllers. Each of the memory controllers has an aggregation processing part and an aggregation synchronization part. Based on a signal from the aggregation synchronization part, the aggregation processing part aggregates valid data of a temporary physical block into another physical block. When one of the memory controllers requires an aggregation process, the aggregation synchronization part sends a synchronization signal to the other memory controller, so that the aggregation process is simultaneously carried out by the other memory controller. Thus, in the nonvolatile memory device having a plurality of memory controllers, it is possible to reduce the time required for the aggregation process and carry out a high-speed writing process.

    摘要翻译： 非易失性存储器件包括多个存储器控制器。 每个存储器控制器具有聚合处理部分和聚合同步部分。 基于聚合同步部分的信号，聚合处理部分将临时物理块的有效数据聚合成另一个物理块。 当其中一个存储器控制器需要聚合过程时，聚合同步部分向另一个存储器控制器发送一个同步信号，从而由另一个存储器控制器同时执行聚合过程。 因此，在具有多个存储器控制器的非易失性存储器件中，可以减少聚集处理所需的时间并执行高速写入处理。

    MEMORY CONTROLLER, NONVOLATILE STORAGE DEVICE, NONVOLATILE STORAGE SYSTEM, AND DATA WRITING METHOD
    5.
    发明申请
    MEMORY CONTROLLER, NONVOLATILE STORAGE DEVICE, NONVOLATILE STORAGE SYSTEM, AND DATA WRITING METHOD 审中-公开
    存储器控制器，非易失存储器件，非易失性存储系统和数据写入方法

    公开(公告)号：US20100082878A1

    公开(公告)日：2010-04-01

    申请号：US11993631

    申请日：2006-05-24

    申请人： Manabu Inoue ,  Masahiro Nakanichi ,  Tomoaki Izumi ,  Hironori Mori ,  Kunihiro Maki ,  Toshiyuki Honda

    发明人： Manabu Inoue ,  Masahiro Nakanichi ,  Tomoaki Izumi ,  Hironori Mori ,  Kunihiro Maki ,  Toshiyuki Honda

    IPC分类号： G06F12/00 ,  G06F12/08

    CPC分类号： G06F12/0246

    摘要： Used is a nonvolatile memory such as a multi-level NAND flash memory having memory cells for holding data of a plurality of pages. When the data is to be written in the nonvolatile memory 110, a physical unit is consisted in units of a plurality of paired pages. When all the physical units cannot be written, the data is copied from an old physical block holding an already written effective data, and is written in a new physical block till the written, from the first section of a new physical unit, so that an error can be prevented.

    摘要翻译： 使用的是非易失性存储器，例如具有用于保存多页数据的存储单元的多级NAND闪存。 当将数据写入非易失性存储器110时，物理单元以多个成对页的单位组成。 当所有物理单元都不能被写入时，数据从保存已经写入的有效数据的旧物理块复制，并被写入新的物理块，直到从新的物理单元的第一部分写入， 可以防止错误。

    NONVOLATILE STORAGE DEVICE, MEMORY CONTROLLER, AND DEFECTIVE REGION DETECTION METHOD
    6.
    发明申请
    NONVOLATILE STORAGE DEVICE, MEMORY CONTROLLER, AND DEFECTIVE REGION DETECTION METHOD 有权
    非易失存储器件，存储器控制器和缺陷区域检测方法

    公开(公告)号：US20090055680A1

    公开(公告)日：2009-02-26

    申请号：US11995600

    申请日：2006-07-13

    申请人： Toshiyuki Honda ,  Kunihiro Maki ,  Shigekazu Kogita

    发明人： Toshiyuki Honda ,  Kunihiro Maki ,  Shigekazu Kogita

    IPC分类号： G06F11/07

    CPC分类号： G06F11/1068

    摘要： It is possible to accurately detect a physical block which has caused a fixture defect in a flash memory so as to limit the use of the physical block. By recording a history of generation of a physical block error and a history of physical erasing in an ECC error record, it is judged whether the error which has occurred is accidental or caused by a fixture defect. When no error is caused in the data written by physical erasing after a first read error occurrence, the first error is accidental and if another error is caused, the error is judged to be caused by a fixture defect. By using such an ECC error record, it is possible to accurately judge whether the error is accidental or caused by a fixture defect. By eliminating use of the physical block judged to have a fixture defect, it is possible to reduce read errors.

    摘要翻译： 可以精确地检测在闪速存储器中造成夹具缺陷的物理块，从而限制物理块的使用。 通过在ECC错误记录中记录生成物理块错误和物理擦除历史的历史，判断发生的错误是偶然的还是由固定缺陷引起的。 在第一次读取错误发生后，通过物理擦除写入的数据没有引起错误时，第一个错误是偶然的，如果引起另一个错误，则判断该错误是由于一个夹具缺陷引起的。 通过使用这样的ECC错误记录，可以准确地判断误差是偶然的还是由夹具缺陷引起的。 通过消除被认为具有夹具缺陷的物理块的使用，可以减少读取错误。

    Nonvolatile storage device, memory controller, and defective region detection method
    7.
    发明授权
    Nonvolatile storage device, memory controller, and defective region detection method 有权
    非易失性存储装置，存储器控制器和缺陷区域检测方法

    公开(公告)号：US09092361B2

    公开(公告)日：2015-07-28

    申请号：US11995600

    申请日：2006-07-13

    申请人： Toshiyuki Honda ,  Kunihiro Maki ,  Shigekazu Kogita

    发明人： Toshiyuki Honda ,  Kunihiro Maki ,  Shigekazu Kogita

    IPC分类号： G06F11/00 ,  G06F11/10

    CPC分类号： G06F11/1068

    摘要： It is possible to accurately detect a physical block which has caused a fixture defect in a flash memory so as to limit the use of the physical block. By recording a history of generation of a physical block error and a history of physical erasing in an ECC error record, it is judged whether the error which has occurred is accidental or caused by a fixture defect. When no error is caused in the data written by physical erasing after a first read error occurrence, the first error is accidental and if another error is caused, the error is judged to be caused by a fixture defect. By using such an ECC error record, it is possible to accurately judge whether the error is accidental or caused by a fixture defect. By eliminating use of the physical block judged to have a fixture defect, it is possible to reduce read errors.

    摘要翻译： 可以精确地检测在闪速存储器中造成夹具缺陷的物理块，从而限制物理块的使用。 通过在ECC错误记录中记录生成物理块错误和物理擦除历史的历史，判断发生的错误是偶然的还是由固定缺陷引起的。 在第一次读取错误发生后，通过物理擦除写入的数据没有引起错误时，第一个错误是偶然的，如果引起另一个错误，则判断该错误是由于一个夹具缺陷引起的。 通过使用这样的ECC错误记录，可以准确地判断误差是偶然的还是由夹具缺陷引起的。 通过消除被认为具有夹具缺陷的物理块的使用，可以减少读取错误。