摘要:
It is possible to accurately detect a physical block which has caused a fixture defect in a flash memory so as to limit the use of the physical block. By recording a history of generation of a physical block error and a history of physical erasing in an ECC error record, it is judged whether the error which has occurred is accidental or caused by a fixture defect. When no error is caused in the data written by physical erasing after a first read error occurrence, the first error is accidental and if another error is caused, the error is judged to be caused by a fixture defect. By using such an ECC error record, it is possible to accurately judge whether the error is accidental or caused by a fixture defect. By eliminating use of the physical block judged to have a fixture defect, it is possible to reduce read errors.
摘要:
It is possible to accurately detect a physical block which has caused a fixture defect in a flash memory so as to limit the use of the physical block. By recording a history of generation of a physical block error and a history of physical erasing in an ECC error record, it is judged whether the error which has occurred is accidental or caused by a fixture defect. When no error is caused in the data written by physical erasing after a first read error occurrence, the first error is accidental and if another error is caused, the error is judged to be caused by a fixture defect. By using such an ECC error record, it is possible to accurately judge whether the error is accidental or caused by a fixture defect. By eliminating use of the physical block judged to have a fixture defect, it is possible to reduce read errors.
摘要:
A nonvolatile memory device (101) includes a plurality of physical blocks, each of which is provide with a nonvolatile memory (103), a logic/physical address conversion table, a temporary block and a temporary table. The nonvolatile memory (103) includes a plurality of pages which are predetermined writing units, respectively. The logical-physical address conversion table (106) stores correspondence information between logic addresses and physical addresses of data to be stored in the physical blocks. The temporary block is a physical block to store data that are smaller in size than those of the page. The temporary table (107) stores correspondence information between logic addresses and physical addresses with respect to data to be stored in the temporary block.
摘要:
A nonvolatile memory device (101) includes a plurality of physical blocks, each of which is provide with a nonvolatile memory (103), a logic/physical address conversion table, a temporary block and a temporary table. The nonvolatile memory (103) includes a plurality of pages which are predetermined writing units, respectively. The logical-physical address conversion table (106) stores correspondence information between logic addresses and physical addresses of data to be stored in the physical blocks. The temporary block is a physical block to store data that are smaller in size than those of the page. The temporary table (107) stores correspondence information between logic addresses and physical addresses with respect to data to be stored in the temporary block.
摘要:
Used is a nonvolatile memory such as a multi-level NAND flash memory having memory cells for holding data of a plurality of pages. When the data is to be written in the nonvolatile memory 110, a physical unit is consisted in units of a plurality of paired pages. When all the physical units cannot be written, the data is copied from an old physical block holding an already written effective data, and is written in a new physical block till the written, from the first section of a new physical unit, so that an error can be prevented.
摘要:
A nonvolatile memory system includes a memory card (102) and host equipment (101). The memory card (102) includes a nonvolatile memory (106) including a plurality of physical blocks, and a memory controller (105) for writing data into the nonvolatile memory (106). The host equipment (101) provides to the memory card (102) an access instruction that designates a logical address and a channel number. The memory controller (105) has an address conversion function for converting the logical address into a physical address in the nonvolatile memory (106), a write destination determination function for determining in relation to the channel number a physical address in the nonvolatile memory (106) to which the data is to be written, and a channel management function for individually managing for each channel number a write state in which data of a smaller size than each physical block is written.
摘要:
A nonvolatile storage device includes a nonvolatile memory that stores data and a memory controller that controls the nonvolatile memory. The memory controller accepts a pause instruction to pause writing from the access device within a period in which data from the access device are written, and writes the data received from the access device to the nonvolatile memory within a predetermined time interval, then pauses the writing and accepts read and/or write of new data from the access device.
摘要:
A non-volatile storage device includes one or more non-volatile memories for storing data, and a memory controller for carrying out the control of the non-volatile memory. The non-volatile memory includes the plurality of blocks, which are erase units, and the block includes the plurality of pages, which are write units of data, in each of the blocks at least one set of pages existing which include at least two pages sharing one word line. The memory controller configures a plurality of error correcting groups, each including at least one data page, which is a page for storing data, and at least one error correcting code page for storing a code for error correcting calculation of the data page, and assigns a page of a separate word line with respect to each of the data page and the error correcting page in the same error correcting group.
摘要:
A plural-partitioned type nonvolatile storage device which solves the problem that a memory card composed of a flash memory and a controller, when a storage area is divided into a plurality of partitions, cannot be correctly used with a conventional host apparatus incapable of recognizing plural partitions. The memory card includes, as its storage areas, a device characteristic data storage area, a division table storage area, and a device storage area, where the device storage area is partitioned into plural partitions. The memory card can have different modes for adapting different accesses from the external host, and allows the external host to access partitions corresponding to the mode. Division information as to a dividing method for the plural partitions, and access information as to the host-accessible partitions corresponding to each individual mode are stored in the division table storage area. Plural types of device characteristic data corresponding to mode, respectively, are stored in the device characteristic data storage area.
摘要:
Upon copying data stored on a page in a copy source block of a nonvolatile memory (104) to a page of a copy destination block, an access control unit (108) of a memory controller (103) copies data stored on a page associated with a first copy method to a page of the copy destination block after error correction by an error correction control unit (109), copies data stored on a page associated with a second copy method to a page of the copy destination block without performing the error correction by the error correction control unit (109) according to a copy mode stored in a copy mode storage area, and changes the copy mode associated with the copy destination block to a copy mode that is different from the copy mode of the copy source block.