公开(公告)号：US09459103B2

公开(公告)日：2016-10-04

申请号：US13541196

申请日：2012-07-03

申请人： Masahiro Sato ,  Takayuki Takeuchi ,  Kyotaro Tomoda ,  Minoru Mitsui ,  Tsutomu Ishii ,  Shigehiko Sasaki ,  Akira Ichiboshi ,  Takao Naito

发明人： Masahiro Sato ,  Takayuki Takeuchi ,  Kyotaro Tomoda ,  Minoru Mitsui ,  Tsutomu Ishii ,  Shigehiko Sasaki ,  Akira Ichiboshi ,  Takao Naito

IPC分类号： G01P15/00 ,  G01C21/12

CPC分类号： G01C21/12 ,  H04M2250/12

摘要： A non-transitory computer readable medium stores a movement situation determining program for causing a computer to function as a two-axial direction correlation value calculating portion that calculates a correlation value indicating a relationship between motions in two axial directions of a plurality of axial directions on the basis of information obtained by detecting motions of a moving target in the plurality of axial directions, and a movement situation determining portion that determines a movement situation of the moving target on the basis of the correlation value.

摘要翻译： 非暂时性计算机可读介质存储运动状况确定程序，用于使计算机用作双轴方向相关值计算部分，其计算指示多个轴向方向上的两个轴向方向上的运动之间的关系的相关值 通过检测多个轴向方向上的移动目标的运动获得的信息的基础;以及移动状况确定部，其基于相关值来确定移动目标的移动情况。

公开(公告)号：US09092083B2

公开(公告)日：2015-07-28

申请号：US13458786

申请日：2012-04-27

申请人： Akira Ichiboshi ,  Tsutomu Ishii ,  Takayuki Takeuchi ,  Shigehiko Sasaki ,  Masahiro Sato ,  Kyotaro Tomoda ,  Takao Naito ,  Minoru Mitsui

发明人： Akira Ichiboshi ,  Tsutomu Ishii ,  Takayuki Takeuchi ,  Shigehiko Sasaki ,  Masahiro Sato ,  Kyotaro Tomoda ,  Takao Naito ,  Minoru Mitsui

IPC分类号： G09G5/00 ,  G06F3/041

CPC分类号： G06F3/041 ,  G06F3/03545 ,  G06F3/038 ,  G06F3/0418 ,  G06F3/04883 ,  G06F2203/04104

摘要： A contact detecting device includes a plurality of detecting elements, a generating unit, and a determining unit. The plurality of detecting elements are related to one another in a two-dimensional configuration on a predetermined contacted surface, and respectively detect a contact of an object with the contacted surface. The generating unit generates, on the basis of the result of detection by the plurality of detecting elements, feature information representing a feature of a trajectory drawn on the basis of a contact of an object with the contacted surface. The determining unit determines whether or not the feature information generated by the generating unit corresponds to previously registered specific contact feature information representing a feature of a trajectory drawn on the basis of a specific contact of an object with the contacted surface.

摘要翻译： 接触检测装置包括多个检测元件，生成单元和确定单元。 多个检测元件在预定的接触表面上以二维构造彼此相关，并且分别检测物体与接触表面的接触。 生成单元基于多个检测元件的检测结果生成表示基于物体与被接触表面的接触而画出的轨迹的特征的特征信息。 确定单元确定由生成单元生成的特征信息是否对应于先前登记的特定联系特征信息，其表示基于与接触表面的对象的特定接触绘制的轨迹的特征。

公开(公告)号：US09018738B2

公开(公告)日：2015-04-28

申请号：US13365794

申请日：2012-02-03

申请人： Minoru Mitsui

发明人： Minoru Mitsui

IPC分类号： H01L29/06 ,  H01L21/20 ,  H01L21/762 ,  H01L21/02

CPC分类号： H01L21/2007 ,  H01L21/02376 ,  H01L21/02381 ,  H01L21/76251 ,  H01L21/76254

摘要： A silicon layer transfer substrate includes a silicon substrate of a first substrate, a sacrificial layer, and a transfer silicon layer transferred to a second substrate, wherein the sacrificial layer has a silicon compound layer containing a compound of silicon and at least one element selected from a group consisting of germanium and carbon, and is provided on the silicon substrate of the first substrate, the silicon compound layer having a thickness equal to or smaller than a critical film thickness, the transfer silicon layer transferred to the second substrate is provided on the sacrificial layer, and at least either the silicon substrate or the silicon layer has a groove or a hole connected to the sacrificial layer.

摘要翻译： 硅层转移衬底包括第一衬底的硅衬底，牺牲层和转移到第二衬底的转移硅层，其中所述牺牲层具有包含硅化合物的硅化合物层和选自以下的至少一种元素： 由锗和碳组成的组，并且设置在第一衬底的硅衬底上，硅化合物层的厚度等于或小于临界膜厚度，转移到第二衬底的转移硅层设置在 牺牲层，并且硅衬底或硅层中的至少一个具有连接到牺牲层的沟槽或孔。

公开(公告)号：US20080135890A1

公开(公告)日：2008-06-12

申请号：US11579944

申请日：2005-05-31

申请人： Kiyokazu Nakagawa ,  Keisuke Arimoto ,  Minoru Mitsui

发明人： Kiyokazu Nakagawa ,  Keisuke Arimoto ,  Minoru Mitsui

IPC分类号： H01L29/94 ,  H01L21/00

CPC分类号： H01L29/66742 ,  H01L21/2254 ,  H01L29/78687

摘要： Disclosed is a manufacturing method for forming a FET on a glass substrate at low temperatures. A polycrystalline silicon layer 2 is formed on a glass substrate 1, germanium layers 11, 12 are formed on the polycrystalline silicon layer in regions that are to become a source and a drain, ions serving as a dopant are implanted into at least the germanium layers, and annealing is subsequently applied to thereby cause the implanted dopant to diffuse into the polycrystalline. silicon layer, form a source region S and a drain region D and crystallize the germanium layers. Alternatively, the dopant is implanted also into the polycrystalline silicon layer at such a dosage that will not cause the polycrystalline silicon layer to become amorphous. Annealing for crystallizing the germanium is subsequently carried out. Annealing may be performed in the neighborhood of 500° C.

摘要翻译： 公开了一种在低温下在玻璃基板上形成FET的制造方法。 在玻璃基板1上形成多晶硅层2，在要成为源极和漏极的区域中，在多晶硅层上形成锗层11,12，在至少锗层中注入用作掺杂剂的离子 随后施加退火，从而使注入的掺杂剂扩散到多晶中。 硅层，形成源区S和漏区D，并使锗层结晶。 或者，掺杂剂也以不会导致多晶硅层变得无定形的剂量也被注入到多晶硅层中。 随后进行用于结晶锗的退火。 退火可以在500°C附近进行。