摘要:
A substrate processing apparatus includes a processing chamber configured to process a plurality of substrates, a substrate holder accommodated within the processing chamber and configured to hold the substrates in a vertically spaced-apart relationship, a thermal insulation portion configured to support the substrate holder from below within the processing chamber, a heating unit provided to surround a substrate accommodating region within the processing chamber, and a gas supply system configured to supply a specified gas to at least a thermal insulation portion accommodating region within the processing chamber.
摘要:
Substrate positioning and substrate transporting are processed in parallel, thereby reducing substrate transfer apparatus wait time and improving substrate processing throughput. A substrate transfer apparatus 1 is configured in a single unit, a plural number of wafers W prior to notch alignment is transported at one time from a substrate accommodating container to a substrate alignment apparatus 22, and the plural number of notch aligned wafers is transported from the substrate alignment apparatus 22 to a boat 21. Two stages (upper and lower) of notch alignment units 4 and 5 that configure the substrate alignment apparatus 22 operate independently, and are capable of performing notch alignment, in total, on a number of wafers to be processed that is twice the number of wafers transported at one time by the substrate transfer apparatus 1. While notch alignment is being performed in the one notch alignment unit 4, notch aligned wafers W are transported by the substrate transfer apparatus from the other notch alignment unit 5 to the boat 21, and then wafers prior to notch alignment are transported from the substrate accommodating container to the other notch alignment unit 5.