公开(公告)号：US5312774A

公开(公告)日：1994-05-17

申请号：US983438

申请日：1992-12-03

申请人： Kazuyo Nakamura ,  Keiichiro Uda ,  Osamu Yamazaki ,  Hiromi Hattori ,  Nobutaka Fukushima ,  Shigeo Onishi

发明人： Kazuyo Nakamura ,  Keiichiro Uda ,  Osamu Yamazaki ,  Hiromi Hattori ,  Nobutaka Fukushima ,  Shigeo Onishi

IPC分类号： H01L21/285 ,  H01L21/768

CPC分类号： H01L21/76867 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/76849 ,  H01L21/76852 ,  H01L21/76877

摘要： A method for manufacturing a semiconductor device comprising forming a titanium or titanium compound film by a CVD method which uses a material gas containing an organic titanium compound of the formula (I) ##STR1## wherein R is a hydrogen atom, a lower alkyl group, a C.sub.8-13 condensed polycyclic hydrocarbonyl group or a silyl group which is substituted with a lower alkyl and/or an aryl, and a reducing gas.

摘要翻译： 一种半导体器件的制造方法，包括通过CVD法形成钛或钛化合物膜，所述CVD法使用含有式（I）的有机钛化合物（I）的原料气体，其中R是氢原子，低级 烷基，C8-13缩合多环烃基或被低级烷基和/或芳基取代的甲硅烷基和还原气体。

公开(公告)号：US20130206228A1

公开(公告)日：2013-08-15

申请号：US13880804

申请日：2011-10-17

申请人： Hiroshi Yamaguchi ,  Kazuyo Nakamura

发明人： Hiroshi Yamaguchi ,  Kazuyo Nakamura

IPC分类号： H01L31/02

CPC分类号： H01L31/02013 ,  H01L31/022433 ,  H01L31/044 ,  H01L31/048 ,  H01L31/0504 ,  Y02E10/50

摘要： A connection part for connecting an interconnector is separated from a region having a photoelectric conversion layer formed thereon to improve a strength of the connection pad, thereby provide a solar cell suppressing cracks, breaks, and the like. A solar cell includes a photoelectric conversion layer, an electrode pad formed on the photoelectric conversion layer, an interconnector connected to the electrode pad, a metal thin film formed under the photoelectric conversion layer, a relay terminal being spaced apart from the photoelectric conversion layer and the metal thin film and connected to the metal thin film by connection conductor, and a connection pad formed on the relay terminal.

摘要翻译： 用于连接互连器的连接部分与其上形成有光电转换层的区域分离，以提高连接焊盘的强度，从而提供抑制裂纹，断裂等的太阳能电池。 太阳能电池包括光电转换层，形成在光电转换层上的电极焊盘，连接到电极焊盘的互连器，形成在光电转换层下面的金属薄膜，与光电转换层隔开的中继端子和 金属薄膜并通过连接导体与金属薄膜连接，以及形成在中继端子上的连接焊盘。

公开(公告)号：US06504091B2

公开(公告)日：2003-01-07

申请号：US09779827

申请日：2001-02-09

申请人： Tadashi Hisamatsu ,  Kazuyo Nakamura ,  Yuji Komatsu ,  Masafumi Shimizu

发明人： Tadashi Hisamatsu ,  Kazuyo Nakamura ,  Yuji Komatsu ,  Masafumi Shimizu

IPC分类号： H01L3104

CPC分类号： H01L31/1852 ,  H01L31/03046 ,  H01L31/0687 ,  H01L31/1844 ,  Y02E10/544

摘要： A photoelectric converting device is provided with enhanced photoelectric conversion efficiency by optimizing a combination of materials used for top and bottom cells. The photoelectric converting device of the present invention is provided with first and second pn junctions. The first pn junction is formed in a semiconductor substantially represented by (Al1-yGay)1-xInxP, and the second pn junction is formed in a semiconductor substantially represented by Ga1-zInzAs.

摘要翻译： 通过优化用于顶部和底部电池的材料的组合，光电转换装置具有增强的光电转换效率。 本发明的光电转换装置具有第一和第二pn结。 第一pn结形成在基本上由（Al1-yGay）1-xInxP表示的半导体中，并且第二pn结形成在基本上由Ga1-zInzAs表示的半导体中。

公开(公告)号：US5739574A

公开(公告)日：1998-04-14

申请号：US459163

申请日：1995-06-02

申请人： Kazuyo Nakamura

发明人： Kazuyo Nakamura

IPC分类号： H01L21/336 ,  H01L21/762 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L27/01 ,  H01L21/265 ,  H01L29/06 ,  H01L29/76

CPC分类号： H01L29/78696 ,  H01L21/76264 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/42384 ,  H01L29/66757 ,  H01L21/76281

摘要： A semiconductor device which includes a mesa type silicon film with a source/drain region and a channel region formed therein, a gate oxide film formed on the mesa type silicon film, and a gate electrode provided on the mesa type silicon film through the gate oxide film, wherein an oxide film having a thickness greater than that of the gate film is formed at the top edge section of the mesa type silicon which is present under the gate electrode, as well as a method for manufacturing it.

摘要翻译： 一种半导体器件，包括具有形成在其中的源极/漏极区域和沟道区域的台面型硅膜，形成在台面型硅膜上的栅极氧化膜，以及通过栅极氧化物设置在台面型硅膜上的栅电极 其特征在于，在栅电极下方的台面型硅的顶缘部形成有厚度大于栅极膜的氧化膜的膜，以及其制造方法。

公开(公告)号：US06184056B2

公开(公告)日：2001-02-06

申请号：US09304280

申请日：1999-05-03

申请人： Kazuyo Nakamura ,  Keiji Shimada

发明人： Kazuyo Nakamura ,  Keiji Shimada

IPC分类号： H01L2100

CPC分类号： H01L31/0445 ,  B64G1/443 ,  H01L31/041 ,  H01L31/046 ,  H01L31/0504 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A process for producing a solar cell comprises the steps of; forming at least one electrode on a first surface of a semiconductor substrate for constructing a solar cell, attaching a support substrate to the first surface of the semiconductor substrate on which said electrode is formed, and then processing the semiconductor substrate into a thin-film semiconductor substrate.

摘要翻译： 一种制造太阳能电池的方法包括以下步骤： 在用于构造太阳能电池的半导体衬底的第一表面上形成至少一个电极，将支撑衬底附接到其上形成有所述电极的半导体衬底的第一表面，然后将半导体衬底加工成薄膜半导体 基质。

公开(公告)号：US6130380A

公开(公告)日：2000-10-10

申请号：US66822

申请日：1998-04-28

申请人： Kazuyo Nakamura

发明人： Kazuyo Nakamura

IPC分类号： H01L31/04 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/068 ,  H01L31/18 ,  H01L31/06

CPC分类号： H01L31/022425 ,  H01L31/022441 ,  H01L31/036 ,  H01L31/061 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： In a solar cell, a crystal defect layer by ion implantation or an amorphous layer by ion implantation is formed between p type diffusion layers provided in an island-like manner at a side opposite to a light receiving surface of a low concentration p type semiconductor single crystalline substrate. The element of the ion implantation may be at least one selected from the group consisting of hydrogen, silicon, germanium, fluorine, oxygen and carbon. The constituent substance of the semiconductor substrate, such as Si is preferably used for the ion implantation. In such a solar cell structure having the crystal defect or amorphous layer, relatively long wavelength light that could not effectively be utilized in the prior art solar cell may be utilized so that the photoelectric conversion efficiency may be improved.

摘要翻译： 在太阳能电池中，通过离子注入的晶体缺陷层或通过离子注入的非晶层形成在岛状的p型扩散层的与低浓度p型半导体单体的受光面相反的一侧 晶体衬底。 离子注入的元素可以是选自氢，硅，锗，氟，氧和碳中的至少一种。 诸如Si的半导体衬底的构成物质优选用于离子注入。 在具有晶体缺陷或非晶层的这种太阳能电池结构中，可以利用在现有技术的太阳能电池中不能有效利用的相对长的波长的光，从而可以提高光电转换效率。

公开(公告)号：US06799742B2

公开(公告)日：2004-10-05

申请号：US10000488

申请日：2001-12-04

申请人： Kazuyo Nakamura ,  Tatsuo Saga ,  Kunio Kamimura ,  Tadashi Hisamatsu

发明人： Kazuyo Nakamura ,  Tatsuo Saga ,  Kunio Kamimura ,  Tadashi Hisamatsu

IPC分类号： B64G144

CPC分类号： B64G1/443 ,  Y02E10/52 ,  Y10S136/292

摘要： The object of the invention is to provide a solar panel and a method for manufacturing the same, wherein the manufacture of the solar panel for use in space and repair work thereon can be performed easily and in little time. An entirety of the solar panel is configured by detachably linking a plurality of unit solar cell modules, which include a plurality of solar cells and connection wires for connecting the solar cells, and electrically connecting the unit solar cell modules to one another. Thus, a solar panel can be easily fabricated by combining standardized unit solar cell modules. Moreover, by simply mechanically connecting the unit solar cell modules, they can be electrically connected, and thus the time necessary for manufacture or repair of solar panels can be shortened.

摘要翻译： 发明内容本发明的目的在于提供一种太阳能电池板及其制造方法，其特征在于，能够容易地且短时间地进行用于空间的太阳能电池板的制造和修理工作。 整个太阳能电池板通过可拆卸地连接多个单元太阳能电池模块而构成，多个单元太阳能电池模块包括多个太阳能电池和用于连接太阳能电池的连接线，并且将单元太阳能电池模块彼此电连接。 因此，可以通过组合标准化的单元太阳能电池模块来容易地制造太阳能电池板。 此外，通过简单地机械地连接单元太阳能电池模块，它们可以电连接，因此可以缩短太阳能电池板的制造或修理所需的时间。

公开(公告)号：US6127623A

公开(公告)日：2000-10-03

申请号：US342505

申请日：1999-06-29

申请人： Kazuyo Nakamura ,  Kenzo Kawano ,  Hidetoshi Washio ,  Yoshifumi Tonomura ,  Kunio Kamimura ,  Hideyuki Ueyama

发明人： Kazuyo Nakamura ,  Kenzo Kawano ,  Hidetoshi Washio ,  Yoshifumi Tonomura ,  Kunio Kamimura ,  Hideyuki Ueyama

IPC分类号： H01L31/04 ,  H01L21/306 ,  H01L21/308 ,  H01L31/0236 ,  H01L31/068 ,  H01C31/0236

CPC分类号： H01L31/068 ,  H01L31/0236 ,  H01L21/30608 ,  H01L21/308 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell comprises a crystalline substrate having projections and depressions formed on either side or both sides of the substrate, wherein a projection-depression depth is 25 .mu.m or more.

摘要翻译： 太阳能电池包括具有形成在基板的任一侧或两侧上的突起和凹陷的结晶基板，其中突起凹陷深度为25μm或更大。

公开(公告)号：US5738732A

公开(公告)日：1998-04-14

申请号：US657289

申请日：1996-06-04

申请人： Kazuyo Nakamura ,  Tadashi Hisamatsu

发明人： Kazuyo Nakamura ,  Tadashi Hisamatsu

IPC分类号： H01L31/04 ,  H01L31/0312 ,  H01L31/052 ,  H01L31/06 ,  H01L31/077 ,  H01L31/18

CPC分类号： H01L31/077 ,  H01L31/06 ,  H01L31/1804 ,  H01L31/1812 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell includes an n type diffusion layer formed on a first main surface side of a p.sup.- type monocrystalline Si substrate, and a p.sup.+ type semiconductor layer formed on a second main surface side of substrate and having an energy bandgap narrower than that of Si and a dopant impurity concentration higher than that of substrate.

摘要翻译： 太阳能电池包括形成在p型单晶Si衬底的第一主表面侧上的n型扩散层和形成在衬底的第二主表面侧上并且具有比Si的能带隙窄的能带隙的p +型半导体层 并且掺杂剂杂质浓度高于衬底的掺杂剂杂质浓度。

公开(公告)号：US09236503B2

公开(公告)日：2016-01-12

申请号：US13880804

申请日：2011-10-17

申请人： Hiroshi Yamaguchi ,  Kazuyo Nakamura

发明人： Hiroshi Yamaguchi ,  Kazuyo Nakamura

IPC分类号： H01L31/00 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/048 ,  H01L31/05 ,  H01L31/044

CPC分类号： H01L31/02013 ,  H01L31/022433 ,  H01L31/044 ,  H01L31/048 ,  H01L31/0504 ,  Y02E10/50

摘要： A connection part for connecting an interconnector is separated from a region having a photoelectric conversion layer formed thereon to improve a strength of the connection pad, thereby provide a solar cell suppressing cracks, breaks, and the like. A solar cell includes a photoelectric conversion layer, an electrode pad formed on the photoelectric conversion layer, an interconnector connected to the electrode pad, a metal thin film formed under the photoelectric conversion layer, a relay terminal being spaced apart from the photoelectric conversion layer and the metal thin film and connected to the metal thin film by connection conductor, and a connection pad formed on the relay terminal.

摘要翻译： 用于连接互连器的连接部分与其上形成有光电转换层的区域分离，以提高连接焊盘的强度，从而提供抑制裂纹，断裂等的太阳能电池。 太阳能电池包括光电转换层，形成在光电转换层上的电极焊盘，连接到电极焊盘的互连器，形成在光电转换层下面的金属薄膜，与光电转换层隔开的中继端子和 金属薄膜并通过连接导体与金属薄膜连接，以及形成在中继端子上的连接焊盘。