公开(公告)号：US20060170078A1

公开(公告)日：2006-08-03

申请号：US11339564

申请日：2006-01-26

申请人： Masataka Moriya ,  Kazuhiko Kashima ,  Shinichi Miyano

发明人： Masataka Moriya ,  Kazuhiko Kashima ,  Shinichi Miyano

IPC分类号： H01L29/36

CPC分类号： H01L21/3225

摘要： There is provided a silicon member that can prevent the resistivity of a member itself from varying in a semiconductor manufacturing process, in particular, in a plasma processing process, thereby making wafer processing uniform and being not an impurity contamination source to a wafer to be processed, and a method for manufacturing the same. The silicon member having a resistivity of 0.1 Ω·cm or more and 100 Ω·cm or less is manufactured with steps which are manufacturing a P-type silicon single crystal doped with 13 group atoms of a periodic table having an intrinsic resistivity of 1 Ω·cm or more and 100 Ω·cm or less, and changing said P-type silicon single crystal into an N-type silicon single crystal by oxygen donors formed by annealing at a temperature of 300° C. or more and 500° C. or less.

摘要翻译： 提供了可以防止部件本身的电阻率在半导体制造工艺中变化的硅部件，特别是在等离子体处理工艺中，从而使晶片加工均匀并且不会成为待加工晶片的杂质污染源 及其制造方法。 制造具有0.1Ω·cm以上且100Ω·cm以下的电阻率的硅构件，其步骤是制造掺杂有13个原子的元素周期表的P型硅单晶，其具有1Ω cm以上且100Ω·cm以下，并且通过在300℃以上且500℃以下的退火形成的氧供体将所述P型硅单晶变更为N型硅单晶。 或更少。