公开(公告)号：US20060170078A1

公开(公告)日：2006-08-03

申请号：US11339564

申请日：2006-01-26

申请人： Masataka Moriya ,  Kazuhiko Kashima ,  Shinichi Miyano

发明人： Masataka Moriya ,  Kazuhiko Kashima ,  Shinichi Miyano

IPC分类号： H01L29/36

CPC分类号： H01L21/3225

摘要： There is provided a silicon member that can prevent the resistivity of a member itself from varying in a semiconductor manufacturing process, in particular, in a plasma processing process, thereby making wafer processing uniform and being not an impurity contamination source to a wafer to be processed, and a method for manufacturing the same. The silicon member having a resistivity of 0.1 Ω·cm or more and 100 Ω·cm or less is manufactured with steps which are manufacturing a P-type silicon single crystal doped with 13 group atoms of a periodic table having an intrinsic resistivity of 1 Ω·cm or more and 100 Ω·cm or less, and changing said P-type silicon single crystal into an N-type silicon single crystal by oxygen donors formed by annealing at a temperature of 300° C. or more and 500° C. or less.

摘要翻译： 提供了可以防止部件本身的电阻率在半导体制造工艺中变化的硅部件，特别是在等离子体处理工艺中，从而使晶片加工均匀并且不会成为待加工晶片的杂质污染源 及其制造方法。 制造具有0.1Ω·cm以上且100Ω·cm以下的电阻率的硅构件，其步骤是制造掺杂有13个原子的元素周期表的P型硅单晶，其具有1Ω cm以上且100Ω·cm以下，并且通过在300℃以上且500℃以下的退火形成的氧供体将所述P型硅单晶变更为N型硅单晶。 或更少。

公开(公告)号：US20080277768A1

公开(公告)日：2008-11-13

申请号：US12172534

申请日：2008-07-14

申请人： Masataka MORIYA ,  Kazuhiko Kashima ,  Shinichi Miyano

发明人： Masataka MORIYA ,  Kazuhiko Kashima ,  Shinichi Miyano

IPC分类号： H01L27/00

CPC分类号： H01L21/3225

摘要： There is provided a silicon member that can prevent the resistivity of a member itself from varying in a semiconductor manufacturing process, in particular, in a plasma processing process, thereby making wafer processing uniform and being not an impurity contamination source to a wafer to be processed, and a method for manufacturing the same. The silicon member having a resistivity of 0.1 Ω·cm or more and 100 Ω·cm or less is manufactured with steps which are manufacturing a P-type silicon single crystal doped with 13 group atoms of a periodic table having an intrinsic resistivity of 1 Ω·cm or more and 100 Ω·cm or less, and changing said P-type silicon single crystal into an N-type silicon single crystal by oxygen donors formed by annealing at a temperature of 300° C. or more and 500° C. or less.

摘要翻译： 提供了可以防止部件本身的电阻率在半导体制造工艺中变化的硅部件，特别是在等离子体处理工艺中，从而使晶片加工均匀并且不会成为待加工晶片的杂质污染源 及其制造方法。 制造具有0.1Ω·cm以上且100Ω·cm以下的电阻率的硅构件，其步骤是制造掺杂有13个原子的元素周期表的P型硅单晶，其具有1Ω cm以上且100Ω·cm以下，并且通过在300℃以上且500℃以下的退火形成的氧供体将所述P型硅单晶变更为N型硅单晶。 或更少。

公开(公告)号：US20060169209A1

公开(公告)日：2006-08-03

申请号：US11342613

申请日：2006-01-31

申请人： Shinichi Miyano

发明人： Shinichi Miyano

IPC分类号： H01L21/336 ,  C23C16/00

CPC分类号： H01J37/32642 ,  H01J37/32623 ,  H01L21/67069 ,  Y10T29/49995

摘要： A substrate processing apparatus that enables a plurality of substrates to be subjected to stable plasma processing. A chamber 11 houses a wafer W. The wafer W is subjected to reactive ion etching in the chamber 11. A focus ring 25 has p-type silicon as a parent material thereof. At least part of the focus ring 25 is exposed to an interior of the chamber 11. The focus ring 25 has been subjected to heat treatment at least once.

摘要翻译： 能够使多个基板经受稳定的等离子体处理的基板处理装置。 腔室11容纳晶片W.晶片W在腔室11中进行反应离子蚀刻。聚焦环25具有p型硅作为母体材料。 聚焦环25的至少一部分暴露于室11的内部。聚焦环25已进行至少一次热处理。

公开(公告)号：US20070131167A1

公开(公告)日：2007-06-14

申请号：US11506773

申请日：2006-08-21

申请人： Akira Kodashima ,  Shinichi Miyano ,  Takehiro Kato

发明人： Akira Kodashima ,  Shinichi Miyano ,  Takehiro Kato

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01L21/6719

摘要： A substrate processing apparatus which enables the work efficiency of maintenance to be improved. The substrate processing apparatus comprises a plurality of processing chambers 100 for carrying out plasma processing on a wafer to be processed. Each processing chamber 100 has a chamber lid 200 that can be suspended and supported by a crane unit 500. The crane unit 500 comprises an air cylinder 510 and a linear guide 520. The air cylinder 510 holds the chamber lid 200 movably in a vertical direction thereabove. The linear guide 520 holds the chamber lid 200 movably in a horizontal direction.

摘要翻译： 能够提高维护工作效率的基板处理装置。 基板处理装置包括用于对要处理的晶片执行等离子体处理的多个处理室100。 每个处理室100具有可由起重机单元500悬挂和支撑的室盖200。 起重机单元500包括气缸510和直线导轨520。 气缸510沿着其上方的垂直方向可移动地保持室盖200。 线性引导件520沿水平方向可移动地保持室盖200。

公开(公告)号：US20120209146A1

公开(公告)日：2012-08-16

申请号：US13504718

申请日：2010-11-04

申请人： Takeo Matsumoto ,  Shinichi Miyano ,  Kazuaki Nagayama

发明人： Takeo Matsumoto ,  Shinichi Miyano ,  Kazuaki Nagayama

IPC分类号： A61B5/103

CPC分类号： G01N3/12 ,  A61B5/0055 ,  A61B5/442 ,  A61B5/45 ,  G01N2203/0046 ,  G01N2203/0089

摘要： An aspiration chamber is provided with an aspiration aperture, having a shape in which a width becomes larger from one edge toward another edge, and aspirates soft tissue through the aspiration aperture. A deformation amount measurement portion measures aspiration deformation amounts of the soft tissue within the aspiration aperture along a virtual line from the one edge to another edge. Based on the aspiration deformation amounts that have been measured by the deformation amount measurement portion, a computer uses a finite element model of the soft tissue to derive an approximation equation according to a numerical function for the aspiration deformation amounts and positions on the virtual line and determines a distribution of elasticity from the surface of the soft tissue into its interior by substituting parameters of the approximation equation into estimation equations that are derived by assuming that the deformation along the virtual line reflects elasticity distribution parameters.

摘要翻译： 抽吸室具有抽吸孔，其具有从一个边缘朝向另一个边缘的宽度变大的形状，并且通过抽吸孔吸出软组织。 变形量测量部分沿着从一个边缘到另一个边缘的假想线测量抽吸孔内的软组织的抽吸变形量。 基于由变形量测量部测量的抽吸变形量，计算机使用软组织的有限元模型，根据虚拟线上的抽吸变形量和位置的数值函数导出近似方程， 通过将近似方程的参数代入到通过假设沿着虚拟线的变形反映弹性分布参数而导出的估计方程式来确定从软组织表面到其内部的弹性分布。

公开(公告)号：US07883579B2

公开(公告)日：2011-02-08

申请号：US11506773

申请日：2006-08-21

申请人： Akira Kodashima ,  Shinichi Miyano ,  Takehiro Kato

发明人： Akira Kodashima ,  Shinichi Miyano ,  Takehiro Kato

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/6719

摘要： A substrate processing apparatus which enables the work efficiency of maintenance to be improved. The substrate processing apparatus comprises a plurality of processing chambers 100 for carrying out plasma processing on a wafer to be processed. Each processing chamber 100 has a chamber lid 200 that can be suspended and supported by a crane unit 500. The crane unit 500 comprises an air cylinder 510 and a linear guide 520. The air cylinder 510 holds the chamber lid 200 movably in a vertical direction thereabove. The linear guide 520 holds the chamber lid 200 movably in a horizontal direction.

摘要翻译： 能够提高维护工作效率的基板处理装置。 基板处理装置包括用于对要处理的晶片执行等离子体处理的多个处理室100。 每个处理室100具有能够由起重机单元500悬挂和支撑的室盖200.起重机单元500包括气缸510和直线导轨520.气缸510沿垂直方向可移动地保持室盖200 在上面 线性引导件520沿水平方向可移动地保持室盖200。

公开(公告)号：US20070256638A1

公开(公告)日：2007-11-08

申请号：US11730193

申请日：2007-03-29

申请人： Masanobu Honda ,  Shinichi Miyano ,  Naoki Matsumoto ,  Yutaka Matsui

发明人： Masanobu Honda ,  Shinichi Miyano ,  Naoki Matsumoto ,  Yutaka Matsui

IPC分类号： C23C16/00 ,  C23F1/00

CPC分类号： H01J37/3255 ,  H01J37/32091

摘要： The present invention is an electrode plate for use in plasma processing, to be placed in a plasma processing system so that it faces to a substrate to be subjected to plasma processing, characterized in that its resistivity is in the range of 0.01 mΩcm to 2 Ωcm.

摘要翻译： 本发明是一种用于等离子体处理的电极板，其被放置在等离子体处理系统中，使其面向待进行等离子体处理的基板，其特征在于其电阻率在0.01mΩ〜2Ωm范围内 。