公开(公告)号：US6057592A

公开(公告)日：2000-05-02

申请号：US101431

申请日：1998-10-21

申请人： Masataka Watanabe ,  Tsuneyuki Kaise ,  Masayuki Shinohara ,  Masahisa Endou ,  Tohru Takahashi

发明人： Masataka Watanabe ,  Tsuneyuki Kaise ,  Masayuki Shinohara ,  Masahisa Endou ,  Tohru Takahashi

IPC分类号： H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L33/30 ,  H01L29/167

CPC分类号： H01L33/30 ,  H01L33/12

摘要： At the time of forming an alloy composition gradient layer 4 of gallium arsenide phosphide GaAs.sub.x P.sub.1-x having an arsenic alloy composition x changed in such a range as not to exceed a predetermined alloy composition a with an increase of a layer thickness d between a GaP layer 3 and a composition constant layer 5 of gallium arsenide phosphide GaAs.sub.a P.sub.1-a having the predetermined alloy composition a to be grown above the GaP layer; the alloy composition x is abruptly ascended as in composition ascending zones C11 to C13 with the ascended thickness d of an epitaxial layer and then descended as in crystal stabilizing zones S11 to S13 in such a range as not to cancel the previous ascent amount. One or more combinations of such ascent and descent in the alloy composition are repeated to form as distributed in the alloy composition gradient layer 4, and then the alloy composition x is ascended to the predetermined alloy composition a. Thereby there is obtained a compound semiconductor epitaxial wafer which can effectively eliminate stresses caused by lattice mismatching, can be made thinner with an excellent productivity, and can have a high luminance due to employment of a reflective layer.

摘要翻译： PCT No.PCT / JP97 / 00050 Sec。 371日期：1998年10月21日 102（e）日期1998年10月21日PCT 1997年1月13日PCT PCT。 公开号WO97 / 25747 日期1997年7月17日在形成具有砷合金组成x的砷化镓磷化镓GaAs xP 1-x的合金组成梯度层4的时间在不超过预定合金组成a的范围内变化，层厚增加 在GaP层上方生长具有规定的合金组成a的GaP层3和砷化磷化镓GaAsaP1-a的组成恒定层5之间的d; 如同外延层的上升厚度d的组成上升区域C11至C13中的合金组成x突然上升，然后如在晶体稳定区域S11至S13中下降到不消除先前上升量的范围内。 重复合金组合物中这种上升和下降的一种或多种组合，以形成分布在合金组成梯度层4中，然后合金组合物x上升到预定的合金组成a。 由此，可以获得能有效消除由晶格失配引起的应力的化合物半导体外延晶片，能够以优异的生产率变薄，并且由于使用反射层而具有高的亮度。

公开(公告)号：US5912476A

公开(公告)日：1999-06-15

申请号：US770500

申请日：1996-12-20

申请人： Masataka Watanabe ,  Tsuneyuki Kaise ,  Masayuki Shinohara ,  Masahisa Endou

发明人： Masataka Watanabe ,  Tsuneyuki Kaise ,  Masayuki Shinohara ,  Masahisa Endou

IPC分类号： H01L21/205 ,  H01L33/30 ,  H01L33/00

CPC分类号： H01L33/305 ,  H01L33/025

摘要： A compound semiconductor epitaxial wafer added with nitrogen to provide a high luminous efficiency. Epitaxial layers are grown on a single crystalline substrate 4 made of gallium phosphide or gallium arsenide to form a compound semiconductor epitaxial wafer EW. The epitaxial layers include at least an nitrogen-added gallium phosphide arsenide mixed crystalline epitaxial layer having an n-type carrier concentration descending gradually toward the uppermost surface of the grown layer in a continuous or stepwise manner before p-type impurity is diffused, and contain an intermediate layer 83 with an n-type carrier concentration of 4.times.10.sup.14 /cm.sup.3 or more and less than 3.5.times.10.sup.15 /cm.sup.3, and a surface layer 84 having an n-type carrier concentration equals to or lower than that for the intermediate layer 83.

摘要翻译： 添加氮气的化合物半导体外延晶片以提供高发光效率。 外延层在由磷化镓或砷化镓制成的单晶衬底4上生长以形成化合物半导体外延晶片EW。 外延层至少包括在p型杂质扩散之前，以连续或逐步的方式逐渐向生长层的最上表面逐渐下降的n型载流子浓度的氮化镓磷化砷混合晶体外延层，并且含有 n型载流子浓度为4×10 14 / cm 3以上且小于3.5×10 15 / cm 3的中间层83和具有n型载流子浓度的表面层84等于或低于中间层83的表面层。