摘要:
The airflow controlling device includes a bacteria counting portion counting bacteria of a controlled space; a first smoothing processing portion performing a first smoothing process on the bacteria count; a second smoothing processing portion performing a second smoothing process on the bacteria count; a bacteria reducing capability storing portion storing a bacteria reducing capability relative to each flow rate; a first flow rate evaluating portion selecting a flow rate matching a bacteria reducing capability compatible with an increase in a bacteria count forecasted from the processing result of the first smoothing processing portion; a second flow rate evaluating portion selecting a flow rate matching a bacteria reducing capability compatible with an increase in a bacteria count forecasted from the processing result of the second smoothing processing portion; and a flow rate determining portion selecting a flow rate into the controlled space based on the flow rates selected by the first and second flow rate evaluating portions.
摘要:
The airflow controlling device includes a bacteria counting portion counting bacteria of a controlled space; a first smoothing processing portion performing a first smoothing process on the bacteria count; a second smoothing processing portion performing a second smoothing process on the bacteria count; a bacteria reducing capability storing portion storing a bacteria reducing capability relative to each flow rate; a first flow rate evaluating portion selecting a flow rate matching a bacteria reducing capability compatible with an increase in a bacteria count forecasted from the processing result of the first smoothing processing portion; a second flow rate evaluating portion selecting a flow rate matching a bacteria reducing capability compatible with an increase in a bacteria count forecasted from the processing result of the second smoothing processing portion; and a flow rate determining portion selecting a flow rate into the controlled space based on the flow rates selected by the first and second flow rate evaluating portions.
摘要:
In a measurement method for measuring the epitaxial film thickness of a multilayer epitaxial wafer, a reflectivity spectrum of a multilayer epitaxial wafer having at least two epitaxial layers of different electric characteristics is measured by using infrared radiation in a far infrared region of at least 500 cm.sup.-1 or less, and frequency-analysis is performed on the reflection spectrum thus obtained by a maximum entropy method, and the film thickness of each epitaxial layer is calculated on the basis of the analysis spectrum thus obtained.