Airflow controlling device and method
    1.
    发明授权
    Airflow controlling device and method 有权
    气流控制装置及方法

    公开(公告)号:US08734575B2

    公开(公告)日:2014-05-27

    申请号:US13176971

    申请日:2011-07-06

    IPC分类号: B03C3/40 B01D53/02

    CPC分类号: F24F3/1603 F24F11/74

    摘要: The airflow controlling device includes a bacteria counting portion counting bacteria of a controlled space; a first smoothing processing portion performing a first smoothing process on the bacteria count; a second smoothing processing portion performing a second smoothing process on the bacteria count; a bacteria reducing capability storing portion storing a bacteria reducing capability relative to each flow rate; a first flow rate evaluating portion selecting a flow rate matching a bacteria reducing capability compatible with an increase in a bacteria count forecasted from the processing result of the first smoothing processing portion; a second flow rate evaluating portion selecting a flow rate matching a bacteria reducing capability compatible with an increase in a bacteria count forecasted from the processing result of the second smoothing processing portion; and a flow rate determining portion selecting a flow rate into the controlled space based on the flow rates selected by the first and second flow rate evaluating portions.

    摘要翻译: 气流控制装置包括计数受控空间的细菌的细菌计数部分; 对细菌计数进行第一平滑处理的第一平滑化处理部; 对细菌计数进行第二平滑处理的第二平滑处理部; 细菌减少能力存储部分,其相对于每个流速存储细菌减少能力; 第一流量评价部,选择与从第一平滑化处理部的处理结果预测的细菌计数的增加相适应的细菌减少能力相匹配的流量; 第二流量评价部,选择与从所述第二平滑处理部的处理结果预测的细菌计数的增加相适应的细菌减少能力相匹配的流量; 以及流量决定部,基于由第一流量评价部和第二流量评价部选择的流量,选择进入受控空间的流量。

    AIRFLOW CONTROLLING DEVICE AND METHOD
    2.
    发明申请
    AIRFLOW CONTROLLING DEVICE AND METHOD 有权
    气流控制装置及方法

    公开(公告)号:US20120020831A1

    公开(公告)日:2012-01-26

    申请号:US13176971

    申请日:2011-07-06

    IPC分类号: A61L9/00 G01N33/00

    CPC分类号: F24F3/1603 F24F11/74

    摘要: The airflow controlling device includes a bacteria counting portion counting bacteria of a controlled space; a first smoothing processing portion performing a first smoothing process on the bacteria count; a second smoothing processing portion performing a second smoothing process on the bacteria count; a bacteria reducing capability storing portion storing a bacteria reducing capability relative to each flow rate; a first flow rate evaluating portion selecting a flow rate matching a bacteria reducing capability compatible with an increase in a bacteria count forecasted from the processing result of the first smoothing processing portion; a second flow rate evaluating portion selecting a flow rate matching a bacteria reducing capability compatible with an increase in a bacteria count forecasted from the processing result of the second smoothing processing portion; and a flow rate determining portion selecting a flow rate into the controlled space based on the flow rates selected by the first and second flow rate evaluating portions.

    摘要翻译: 气流控制装置包括计数受控空间的细菌的细菌计数部分; 对细菌计数进行第一平滑处理的第一平滑化处理部; 对细菌计数进行第二平滑处理的第二平滑处理部; 细菌减少能力存储部分,其相对于每个流速存储细菌减少能力; 第一流量评价部,选择与从第一平滑化处理部的处理结果预测的细菌计数的增加相适应的细菌减少能力相匹配的流量; 第二流量评价部,选择与从所述第二平滑处理部的处理结果预测的细菌计数的增加相适应的细菌减少能力相匹配的流量; 以及流量决定部,基于由第一流量评价部和第二流量评价部选择的流量,选择进入受控空间的流量。

    Method for measuring epitaxial film thickness of multilayer epitaxial
wafer
    3.
    发明授权
    Method for measuring epitaxial film thickness of multilayer epitaxial wafer 失效
    测量多层外延晶片的外延膜厚度的方法

    公开(公告)号:US06025596A

    公开(公告)日:2000-02-15

    申请号:US19049

    申请日:1998-02-05

    CPC分类号: G01B11/0625

    摘要: In a measurement method for measuring the epitaxial film thickness of a multilayer epitaxial wafer, a reflectivity spectrum of a multilayer epitaxial wafer having at least two epitaxial layers of different electric characteristics is measured by using infrared radiation in a far infrared region of at least 500 cm.sup.-1 or less, and frequency-analysis is performed on the reflection spectrum thus obtained by a maximum entropy method, and the film thickness of each epitaxial layer is calculated on the basis of the analysis spectrum thus obtained.

    摘要翻译: 在用于测量多层外延晶片的外延膜厚度的测量方法中,通过在至少500cm的远红外区域中使用红外辐射来测量具有不同电特性的至少两个外延层的多层外延晶片的反射率光谱 -1以下,对通过最大熵法得到的反射光谱进行频率分析,根据得到的分析光谱计算各外延层的膜厚。