Process for making an electrophotographic photoreceptor having
protective layer
    3.
    发明授权
    Process for making an electrophotographic photoreceptor having protective layer 失效
    制造具有保护层的电子照相感光体的方法

    公开(公告)号:US5459009A

    公开(公告)日:1995-10-17

    申请号:US624533

    申请日:1990-12-10

    IPC分类号: G03G5/082 G03G5/00

    CPC分类号: G03G5/08278

    摘要: A process for producing an electrophotographic photoreceptor comprising the steps of forming a photoconductive layer on a conductive substrate in a reaction chamber, and after the photoconductive layer is formed, forming a surface protection layer on the photoconductive layer by introducing into the reaction chamber a gaseous mixture comprising (i) a first component, fluorohydrocarbon gas, and (ii) a second component silicon, hydride gas, or a hydrocarbon gas and/or hydrogen gas and decomposing the gaseous mixture by glow discharge, wherein the surface protection layer thus formed comprises amorphous silicon carbide when the second component is a silicon hydride gas or amorphous carbon when the second component is a hydrocarbon gas and/or hydrogen gas. The surface protection layer exhibits sufficient hardness to protect the photoconductive layer from frictional scratches and other related damage.

    摘要翻译: 一种电子照相感光体的制造方法,包括以下步骤:在反应室中的导电性基板上形成光电导层,在形成光电导层之后,在光电导层上形成表面保护层,将反应室内的气体混合物 包括(i)第一组分,氟代烃气体和(ii)第二组分硅,氢化物气体或烃气体和/或氢气,并通过辉光放电分解气体混合物,其中由此形成的表面保护层包含无定形 当第二组分是烃气体和/或氢气时,当第二组分是氢化硅气体或无定形碳时,碳化硅。 表面保护层表现出足够的硬度,以保护光电导层不受摩擦划痕和其他相关损害。

    Multilayered electrophotographic photoreceptor of amorphous silicon
having a surface layer of nitrogenated amorphous silicon
    7.
    发明授权
    Multilayered electrophotographic photoreceptor of amorphous silicon having a surface layer of nitrogenated amorphous silicon 失效
    具有氮化非晶硅表面层的非晶硅的多层电子照相感光体

    公开(公告)号:US4923773A

    公开(公告)日:1990-05-08

    申请号:US259238

    申请日:1988-10-18

    CPC分类号: G03G5/08235

    摘要: An electrophotographic photoreceptor comprising a support, a charge blocking layer, a first photoconductive layer composed of at least amorphous silicon, a second photoconductive layer composed of at least boron-containing amorphous silicon, a surface layer composed of at least nitrogenated amorphous silicon, the surface layer having an interface for contacting the second photoconductive layer, the surface layer including a lower region corresponding to an area not greater than approximately 100 .ANG. away from the interface, the lower region having a ratio of not less than 0.5 parts of nitrogen atoms for one part of silicon atoms, the nitrogen ratio of the lower region and the boron content of the second photoconductive layer corresponding to the relation B.gtoreq.10.sup.(9N-5.5) where B is the boron content in PPM and N is the ratio of nitrogen atoms to silicon atoms.

    摘要翻译: 一种电子照相感光体,包括载体,电荷阻挡层,至少由非晶硅组成的第一光电导层,至少由含硼非晶硅构成的第二光电导层,至少由含氮非晶硅构成的表面层, 层具有用于接触第二光电导层的界面,该表面层包括对应于离界面不大于约100角度的区域的下部区域,下部区域的氮原子比例不小于0.5 对应于B> / = 10(9N-5.5)的关系,其中B是PPM中的硼含量,N是氮的一部分,下部区域的氮比和第二光电导层的硼含量是氮的比例 原子到硅原子。

    Electrophotographic photoreceptor having surface layers
    10.
    发明授权
    Electrophotographic photoreceptor having surface layers 失效
    具有表面层的电子照相感光体

    公开(公告)号:US4965154A

    公开(公告)日:1990-10-23

    申请号:US368103

    申请日:1989-06-19

    IPC分类号: G03G5/082

    CPC分类号: G03G5/08235

    摘要: An electrophotographic photoreceptor comprising a photoconductive layer, a first surface layer and a second surface layer formed in sequence on a support, said photoconductive layer being substantially composed of amorphous silicon, and each of said first and second surface layers being substantially composed of nitrogen-doped amorphous silicon, the concentration of nitrogen atoms in the second surface layer being higher than that in the first surface layer. The photoconductive layer is doped with atoms of an element of group III, or in at least a part of the photoconductive layer doped with germanium atoms in place of the element of group III.

    摘要翻译: 一种电子照相感光体,包括光电导层,第一表面层和在支撑体上依次形成的第二表面层,所述光电导层基本上由非晶硅组成,并且所述第一和第二表面层中的每一个基本上由氮掺杂 非晶硅中,第二表面层中的氮原子浓度高于第一表面层中的氮原子浓度。 光电导层掺杂有III族元素的原子,或掺杂有锗原子的光电导层的至少一部分代替III族元素。