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公开(公告)号:US20200285083A1
公开(公告)日:2020-09-10
申请号:US16826489
申请日:2020-03-23
Applicant: Massachusetts Institute of Technology
Inventor: Zhuoran FANG , Tian GU , Juejun Hu , Junying LI , Yifei ZHANG
Abstract: An alloy of GexSbySezTem includes atoms of Ge, Sb, Se, and Te that form a crystalline structure having a plurality of vacancies randomly distributed in the crystalline structure. The alloy can be used to construct an optical device including a first waveguide to guide a light beam and a modulation layer disposed on the first waveguide. The modulation includes the alloy of GexSbySezTem which has a first refractive index n1 in an amorphous state and a second refractive index n2, greater than the first refractive index by at least 1, in a crystalline state. The first waveguide and the modulation layer are configured to guide about 1% to about 50% of the light beam in the modulation layer when the alloy is in the amorphous state and guide no optical mode when the alloy is in the crystalline state.
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公开(公告)号:US20180284492A1
公开(公告)日:2018-10-04
申请号:US15941879
申请日:2018-03-30
Applicant: Massachusetts Institute of Technology
Inventor: Zhuoran FANG , Tian GU , Juejun HU , Junying LI , Yifei ZHANG
Abstract: An alloy of GexSbySezTem includes atoms of Ge, Sb, Se, and Te that form a crystalline structure having a plurality of vacancies randomly distributed in the crystalline structure. The alloy can be used to construct an optical device including a first waveguide to guide a light beam and a modulation layer disposed on the first waveguide. The modulation includes the alloy of GexSbySezTem which has a first refractive index n1 in an amorphous state and a second refractive index n2, greater than the first refractive index by at least 1, in a crystalline state. The first waveguide and the modulation layer are configured to guide about 1% to about 50% of the light beam in the modulation layer when the alloy is in the amorphous state and guide no optical mode when the alloy is in the crystalline state.
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