公开(公告)号：US11362293B2

公开(公告)日：2022-06-14

申请号：US16427192

申请日：2019-05-30

Applicant: Massachusetts Institute of Technology

Inventor： Marc A. Baldo ,  Tony Wu ,  Markus Einzinger

IPC: H01L51/42 ,  H01L51/00 ,  H01L51/44 ,  H01L31/0224 ,  H01L31/055

Abstract: Embodiments related to interlayers (e.g., interlayers comprising a transition metal oxide, a transition metal oxynitride, and/or a transition metal nitride) and associated systems, devices (e.g., photovoltaic devices), and methods are disclosed. In some embodiments, a system for exciton transfer includes a substrate including an inorganic semiconductor. An interlayer may be disposed on the substrate, and a layer including a material that undergoes singlet exciton fission when exposed to electromagnetic radiation may be disposed on the interlayer. The interlayer may be disposed between the substrate and the layer. In some embodiments, a method for manufacturing a system for exciton transfer involves depositing an interlayer onto a substrate that includes an inorganic semiconductor. The method may also include depositing a layer including a material that undergoes singlet exciton fission when exposed to electromagnetic radiation onto the interlayer.