公开(公告)号：US10236450B2

公开(公告)日：2019-03-19

申请号：US15078817

申请日：2016-03-23

Applicant: Massachusetts Institute of Technology

Inventor： Timothy M. Swager ,  Troy Andrew Van Voorhis ,  Marc A. Baldo ,  Tony Wu ,  Katsuaki Kawasumi ,  Tianyu Zhu

IPC: C09K11/02 ,  C09K11/06 ,  H01L51/00

Abstract: Embodiments described herein relate to compositions including bridged bicyclic compounds such as iptycene-based structures and extended iptycene structures. In some embodiments, the compositions may be useful in organic light-emitting diodes (OLEDs), organic photovoltaics, and other devices.

公开(公告)号：US20160285007A1

公开(公告)日：2016-09-29

申请号：US15078817

申请日：2016-03-23

Applicant: Massachusetts Institute of Technology

Inventor： Timothy M. Swager ,  Troy Andrew Van Voorhis ,  Marc A. Baldo ,  Tony Wu ,  Katsuaki Kawasumi ,  Tianyu Zhu

IPC: H01L51/00 ,  C09K11/06 ,  C09K11/02

CPC classification number: H01L51/0071 ,  C09K11/025 ,  C09K11/06 ,  C09K2211/1014 ,  C09K2211/1022 ,  C09K2211/1051 ,  C09K2211/1074 ,  H01L51/0061 ,  Y02E10/549

Abstract: Embodiments described herein relate to compositions including bridged bicyclic compounds such as iptycene-based structures and extended iptycene structures. In some embodiments, the compositions may be useful in organic light-emitting diodes (OLEDs), organic photovoltaics, and other devices.

Abstract translation: 本文描述的实施方案涉及包含桥连双环化合物如基于iptycene的结构和延伸的iycycene结构的组合物。 在一些实施方案中，组合物可用于有机发光二极管（OLED），有机光伏和其它器件。

公开(公告)号：US11362293B2

公开(公告)日：2022-06-14

申请号：US16427192

申请日：2019-05-30

Applicant: Massachusetts Institute of Technology

Inventor： Marc A. Baldo ,  Tony Wu ,  Markus Einzinger

IPC: H01L51/42 ,  H01L51/00 ,  H01L51/44 ,  H01L31/0224 ,  H01L31/055

Abstract: Embodiments related to interlayers (e.g., interlayers comprising a transition metal oxide, a transition metal oxynitride, and/or a transition metal nitride) and associated systems, devices (e.g., photovoltaic devices), and methods are disclosed. In some embodiments, a system for exciton transfer includes a substrate including an inorganic semiconductor. An interlayer may be disposed on the substrate, and a layer including a material that undergoes singlet exciton fission when exposed to electromagnetic radiation may be disposed on the interlayer. The interlayer may be disposed between the substrate and the layer. In some embodiments, a method for manufacturing a system for exciton transfer involves depositing an interlayer onto a substrate that includes an inorganic semiconductor. The method may also include depositing a layer including a material that undergoes singlet exciton fission when exposed to electromagnetic radiation onto the interlayer.