公开(公告)号：US20230366086A1

公开(公告)日：2023-11-16

申请号：US18116662

申请日：2023-03-02

Applicant: Massachusetts Institute of Technology

Inventor： Vladimir Bulovic ,  Maximilian Hoerantner

IPC: C23C16/455 ,  C23C16/30

CPC classification number: C23C16/455 ,  H10K71/164 ,  C23C16/30 ,  H10K30/10

Abstract: Disclosed are vapor transport deposition systems and methods for alternating sequential vapor transport deposition of multi-component perovskite thin-films. The systems include multiple vaporizing sources that are mechanically or digitally controlled for high throughput deposition. Alternating sequential deposition provides faster sequential deposition, and allows for reduced material degradation due to different vapor temperatures.

公开(公告)号：US20200024733A1

公开(公告)日：2020-01-23

申请号：US16514004

申请日：2019-07-17

Applicant: Massachusetts Institute of Technology

Inventor： Vladimir Bulovic ,  Maximilian Hoerantner

IPC: C23C16/455 ,  C23C16/30 ,  H01L51/00

Abstract: Disclosed are vapor transport deposition systems and methods for alternating sequential vapor transport deposition of multi-component perovskite thin-films. The systems include multiple vaporizing sources that are mechanically or digitally controlled for high throughput deposition. Alternating sequential deposition provides faster sequential deposition, and allows for reduced material degradation due to different vapor temperatures.

公开(公告)号：US11629405B2

公开(公告)日：2023-04-18

申请号：US16514004

申请日：2019-07-17

Applicant: Massachusetts Institute of Technology

Inventor： Vladimir Bulovic ,  Maximilian Hoerantner

IPC: C23C16/455 ,  H01L51/00 ,  C23C16/30 ,  H01L51/42

Abstract: Disclosed are vapor transport deposition systems and methods for alternating sequential vapor transport deposition of multi-component perovskite thin-films. The systems include multiple vaporizing sources that are mechanically or digitally controlled for high throughput deposition. Alternating sequential deposition provides faster sequential deposition, and allows for reduced material degradation due to different vapor temperatures.