公开(公告)号：US10461489B2

公开(公告)日：2019-10-29

申请号：US15718045

申请日：2017-09-28

申请人： Massachusetts Institute of Technology

发明人： Purnawirman Purnawirman ,  Michael R. Watts ,  Ehsan Shah Hosseini ,  Jonathan B. Bradley ,  Jie Sun ,  Matteo Cherchi

IPC分类号： H01S3/063 ,  H01S3/16 ,  H01S3/17 ,  H01S3/091 ,  H01S3/08 ,  H01S3/083 ,  H01S3/094 ,  H01S3/23 ,  H01S3/105

摘要： Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).