公开(公告)号：US10910559B2

公开(公告)日：2021-02-02

申请号：US16427597

申请日：2019-05-31

Applicant: Massachusetts Institute of Technology

Inventor： Thomas Defferriere ,  Dmitri Kalaev ,  Harry L. Tuller ,  Jennifer Lilia Rupp

IPC: G11C13/00 ,  G11C13/04 ,  H01L45/00

Abstract: An optoelectronic memristor includes a first electrode, a second electrode, and a solid electrolyte in between that is in electrical communication with the first electrode and the second electrode. The solid electrolyte has an electronic conductivity of about 10−10 Siemens/cm to about 10−4 Siemens/cm at room temperature. The first electrode, and optionally the second electrode, can be optically transparent at a specific wavelength and/or a wavelength range. A direct current (DC) voltage source is employed to apply an electric field across the solid electrolyte, which induces a spatial redistribution of ionic defects in the solid electrolyte. In turn, this causes a change in electrical resistance of the solid electrolyte. The application of the electric field can also cause a change in an optical property of the solid electrolyte at the specific wavelength, and/or at the wavelength range (or a portion thereof).