Semiconductor device and method of manufacturing a semiconductor device
    1.
    发明授权
    Semiconductor device and method of manufacturing a semiconductor device 有权
    半导体装置及其制造方法

    公开(公告)号:US07939885B2

    公开(公告)日:2011-05-10

    申请号:US12112547

    申请日:2008-04-30

    IPC分类号: H01L29/76

    摘要: A semiconductor device has a substrate having a plurality of neighboring trenches, and a contact area, one mesa stripe each being formed between two neighboring trenches. The contact area contacts mesa stripes and surrounds an opening region in which the contact area is not formed and which is formed such that the contact area contacts the same mesa stripes at two positions between which the opening region is arranged, and the opening region having a region of elongate extension which intersects the mesa stripes in a skewed or perpendicular manner.

    摘要翻译: 半导体器件具有具有多个相邻沟槽的衬底,以及每个在两个相邻沟槽之间形成的接触区域,一个台面条纹。 接触区域接触台面条状并且围绕其中未形成接触区域的开口区域,并且其形成为使得接触区域在布置有开口区域的两个位置处接触相同的台面条纹,并且开口区域具有 细长延伸区域以斜面或垂直方式与台面条纹相交。