公开(公告)号：US20030141547A1

公开(公告)日：2003-07-31

申请号：US10345973

申请日：2003-01-17

申请人： Matsushita Electric Industrial Co., Ltd.

发明人： Katsushige Yamashita ,  Hisaji Nishimura ,  Hiromu Yamazaki ,  Masaki Inoue ,  Yoshinobu Satoh

IPC分类号： H01L021/00 ,  H01L027/12

CPC分类号： H01L27/1203 ,  H01L21/76264 ,  H01L21/76283 ,  H01L21/76286 ,  H01L21/84

摘要： An SOI semiconductor device includes at least an SOI substrate including an insulating film and a semiconductor layer formed on the insulating film; and an active semiconductor element formed on the semiconductor layer. The active semiconductor element is formed in an element formation region surrounded by an isolating region for isolating the semiconductor layer in a form of an island. A gettering layer containing a high concentration impurity is formed in a portion of the semiconductor layer excluding the element formation region in which the active semiconductor element is formed, and the gettering layer is not formed in the element formation region in which the active semiconductor element is formed.

摘要翻译： SOI半导体器件至少包括包含绝缘膜的SOI衬底和形成在绝缘膜上的半导体层; 以及形成在半导体层上的有源半导体元件。 活性半导体元件形成在由隔离区域包围的元件形成区域中，用于隔离半岛形式的岛状。 在除了形成有源半导体元件的元件形成区域之外的半导体层的一部分中形成含有高浓度杂质的吸杂层，并且在有源半导体元件的元素形成区域中不形成吸杂层 形成。