公开(公告)号：US08357617B2

公开(公告)日：2013-01-22

申请号：US12371672

申请日：2009-02-16

申请人： Matt Yeh ,  Shun Wu Lin ,  Chi-Chun Chen ,  Ryan Chia-Jen Chen ,  Yi-Hsing Chen ,  Chien-Hao Chen ,  Donald Y. Chao ,  Kuo-Bin Huang

发明人： Matt Yeh ,  Shun Wu Lin ,  Chi-Chun Chen ,  Ryan Chia-Jen Chen ,  Yi-Hsing Chen ,  Chien-Hao Chen ,  Donald Y. Chao ,  Kuo-Bin Huang

IPC分类号： H01L21/302

CPC分类号： H01L21/28105 ,  H01L21/28123 ,  H01L21/28158 ,  H01L21/31111 ,  H01L21/32139 ,  H01L29/401

摘要： Provided are methods of patterning metal gate structures including a high-k gate dielectric. In an embodiment, a soluble hard mask layer may be used to provide a masking element to pattern a metal gate. The soluble hard mask layer may be removed from the substrate by water or a photoresist developer. In an embodiment, a hard mask including a high-k dielectric is formed. In a further embodiment, a protection layer is formed underlying a photoresist pattern. The protection layer may protect one or more layers formed on the substrate from a photoresist stripping process.

公开(公告)号：US20100048011A1

公开(公告)日：2010-02-25

申请号：US12371672

申请日：2009-02-16

申请人： Matt Yeh ,  Shun Wu Lin ,  Chi-Chun Chen ,  Ryan Chia-Jen Chen ,  Yi-Hsing Chen ,  Chien-Hao Chen ,  Donald Y. Chao ,  Kuo-Bin Huang

发明人： Matt Yeh ,  Shun Wu Lin ,  Chi-Chun Chen ,  Ryan Chia-Jen Chen ,  Yi-Hsing Chen ,  Chien-Hao Chen ,  Donald Y. Chao ,  Kuo-Bin Huang

IPC分类号： H01L21/3205

CPC分类号： H01L21/28105 ,  H01L21/28123 ,  H01L21/28158 ,  H01L21/31111 ,  H01L21/32139 ,  H01L29/401

摘要： Provided are methods of patterning metal gate structures including a high-k gate dielectric. In an embodiment, a soluble hard mask layer may be used to provide a masking element to pattern a metal gate. The soluble hard mask layer may be removed from the substrate by water or a photoresist developer. In an embodiment, a hard mask including a high-k dielectric is formed. In a further embodiment, a protection layer is formed underlying a photoresist pattern. The protection layer may protect one or more layers formed on the substrate from a photoresist stripping process.

摘要翻译： 提供了包括高k栅极电介质的金属栅极结构的图案化方法。 在一个实施方案中，可以使用可溶性硬掩模层来提供掩模元件以对金属栅极进行图案化。 可溶性硬掩模层可以通过水或光致抗蚀剂显影剂从基底上去除。 在一个实施例中，形成包括高k电介质的硬掩模。 在另一个实施例中，保护层形成在光致抗蚀剂图案下面。 保护层可以保护形成在衬底上的一个或多个层与光致抗蚀剂剥离工艺。

公开(公告)号：US06642128B1

公开(公告)日：2003-11-04

申请号：US10140396

申请日：2002-05-06

申请人： Ching-Shan Lu ,  Kuo-Bin Huang ,  Jih-Churng Twu

发明人： Ching-Shan Lu ,  Kuo-Bin Huang ,  Jih-Churng Twu

IPC分类号： H01L21322

CPC分类号： H01L21/76224

摘要： A method for preventing oxide layer peeling in a high temperature annealing process including providing a plurality of spaced apart stacked semiconductor wafers for carrying out a high temperature annealing process including ambient nitrogen gas the plurality of spaced apart stacked semiconductor wafers stacked such that a process surface including an oxide layer of at least one semiconductor wafer is adjacent to a backside surface of another semiconductor wafer said backside surface having a layer of silicon nitride formed thereon prior to carrying out the high temperature annealing process; and, carrying out the high temperature annealing process.

摘要翻译： 一种用于防止在高温退火过程中氧化层剥离的方法，包括提供多个间隔堆叠的半导体晶片，用于执行包括环境氮气的高温退火工艺，所述多个间隔堆叠的半导体晶片被堆叠，使得处理表面包括 在进行高温退火处理之前，至少一个半导体晶片的氧化物层与另一半导体晶片的背面相邻，所述背面具有形成在其上的氮化硅层; 并进行高温退火处理。