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    Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process
    3.
    发明授权
    Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process 有权
    在高k /金属栅极工艺中形成执行N功函数和P功函数的单一金属的方法

    公开(公告)号：US08524588B2

    公开(公告)日：2013-09-03

    申请号：US12492889

    申请日：2009-06-26

    申请人： Yih-Ann Lin ,  Ryan Chia-Jen Chen ,  Donald Y. Chao ,  Yi-Shien Mor ,  Kuo-Tai Huang

    发明人： Yih-Ann Lin ,  Ryan Chia-Jen Chen ,  Donald Y. Chao ,  Yi-Shien Mor ,  Kuo-Tai Huang

    IPC分类号： H01L21/3205 ,  H01L21/4763

    CPC分类号： H01L27/092 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517

    摘要： The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a gate dielectric over a semiconductor substrate, forming a capping layer over or under the gate dielectric, forming a metal layer over the capping layer, the metal layer having a first work function, treating a portion of the metal layer such that a work function of the portion of the metal layer changes from the first work function to a second work function, and forming a first metal gate from the untreated portion of the metal layer having the first work function and forming a second metal gate from the treated portion of the metal layer having the second work function.

    摘要翻译： 本公开提供了制造半导体器件的方法。 该方法包括在半导体衬底上形成栅极电介质，在栅极电介质上或之下形成覆盖层，在覆盖层上形成金属层，金属层具有第一功函数，处理金属层的一部分，使得 所述金属层的所述部分的功函数从所述第一功函数变化为第二功函数，并且从具有所述第一功函数的所述金属层的未处理部分形成第一金属栅极，并且从所述处理的所述第二金属栅极形成第二金属栅极 具有第二功函数的金属层的部分。

    METHOD OF FORMING A SINGLE METAL THAT PERFORMS N WORK FUNCTION AND P WORK FUNCTION IN A HIGH-K/METAL GATE PROCESS
    4.
    发明申请
    METHOD OF FORMING A SINGLE METAL THAT PERFORMS N WORK FUNCTION AND P WORK FUNCTION IN A HIGH-K/METAL GATE PROCESS 有权
    在高K /金属浇口工艺中形成单一金属的方法，其具有N个工作功能和P功能

    公开(公告)号：US20100038721A1

    公开(公告)日：2010-02-18

    申请号：US12492889

    申请日：2009-06-26

    申请人： Yih-Ann Lin ,  Ryan Chia-Jen Chen ,  Donald Y. Chao ,  Yi-Shien Mor ,  Kuo-Tai Huang

    发明人： Yih-Ann Lin ,  Ryan Chia-Jen Chen ,  Donald Y. Chao ,  Yi-Shien Mor ,  Kuo-Tai Huang

    IPC分类号： H01L27/092 ,  H01L21/28

    CPC分类号： H01L27/092 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517

    摘要： The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a gate dielectric over a semiconductor substrate, forming a capping layer over or under the gate dielectric, forming a metal layer over the capping layer, the metal layer having a first work function, treating a portion of the metal layer such that a work function of the portion of the metal layer changes from the first work function to a second work function, and forming a first metal gate from the untreated portion of the metal layer having the first work function and forming a second metal gate from the treated portion of the metal layer having the second work function.

    摘要翻译： 本公开提供了制造半导体器件的方法。 该方法包括在半导体衬底上形成栅极电介质，在栅极电介质之上或之下形成覆盖层，在覆盖层上形成金属层，金属层具有第一功函数，处理金属层的一部分，使得 所述金属层的所述部分的功函数从所述第一功函数变为第二功函数，并且从具有所述第一功函数的所述金属层的未处理部分形成第一金属栅极，并且从所述处理的所述金属栅极形成第二金属栅极 具有第二功函数的金属层的部分。

    MOSFET Device With Localized Stressor
    5.
    发明申请
    MOSFET Device With Localized Stressor 审中-公开
    具有局部应力的MOSFET器件

    公开(公告)号：US20080128765A1

    公开(公告)日：2008-06-05

    申请号：US12016499

    申请日：2008-01-18

    申请人： Chien-Hao Chen ,  Donald Y. Chao ,  Tze-Liang Lee ,  Shih-Chang Chen

    发明人： Chien-Hao Chen ,  Donald Y. Chao ,  Tze-Liang Lee ,  Shih-Chang Chen

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7833 ,  H01L29/6659 ,  H01L29/7843

    摘要： A metal-oxide-semiconductor field-effect transistors (MOSFET) having localized stressors is provided. In accordance with embodiments of the present invention, a transistor comprises a high-stress film over the source/drain regions, but not over the gate electrode. The high-stress film may be a tensile-stress film for use with n-channel devices or a compressive-stress film for use with p-channel devices. A method of fabricating a MOSFET with localized stressors over the source/drain regions comprises forming a transistor having a gate electrode and source/drain regions, forming a high-stress film over the gate electrode and the source/drain regions, and thereafter removing the high-stress film located over the gate electrode, thereby leaving the high-stress film located over the source/drain regions. A contact-etch stop layer may be formed over the transistor.

    摘要翻译： 提供了具有局部应力源的金属氧化物半导体场效应晶体管（MOSFET）。 根据本发明的实施例，晶体管包括源/漏区上的高应力膜，但不在栅电极上。 高应力膜可以是用于n沟道器件的拉伸应力膜或用于p沟道器件的压应力膜。 在源极/漏极区域上制造具有局部应力源的MOSFET的方法包括形成具有栅电极和源/漏区的晶体管，在栅电极和源/漏区上形成高应力膜，然后除去 高应力膜位于栅电极之上，从而使高应力膜位于源极/漏极区之上。 接触蚀刻停止层可以形成在晶体管上。

    Integrated circuit metal gate structure and method of fabrication
    6.
    发明授权
    Integrated circuit metal gate structure and method of fabrication 有权
    集成电路金属栅极结构及其制造方法

    公开(公告)号：US08679962B2

    公开(公告)日：2014-03-25

    申请号：US12264822

    申请日：2008-11-04

    申请人： Yong-Tian Hou ,  Chien-Hao Chen ,  Donald Y. Chao ,  Cheng-Lung Hung

    发明人： Yong-Tian Hou ,  Chien-Hao Chen ,  Donald Y. Chao ,  Cheng-Lung Hung

    IPC分类号： H01L21/3205

    CPC分类号： H01L29/4966 ,  H01L21/28088 ,  H01L21/28176 ,  H01L21/28229 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

    摘要： A method of forming a gate structure is provided. The method includes providing a metal layer in the gate structure, the metal layer includes an oxygen-gettering composition. The metal layer getters oxygen from the interface layer, which may decrease the thickness of the interface layer. The gettered oxygen converts the metal layer to a metal oxide, which may act as a gate dielectric for the gate structure. A multi-layer metal gate structure is also provided including a oxygen-gettering metal layer, an oxygen-containing metal layer, and a polysilicon interface metal layer overlying a high-k gate dielectric.

    摘要翻译： 提供一种形成栅极结构的方法。 该方法包括在栅极结构中提供金属层，金属层包括吸氧组合物。 金属层从界面层吸收氧气，这可能会降低界面层的厚度。 吸收的氧将金属层转化为金属氧化物，其可以用作栅极结构的栅极电介质。 还提供了多层金属栅极结构，其包括吸氧过程金属层，含氧金属层和覆盖在高k栅极电介质上的多晶硅界面金属层。

    INTEGRATED CIRCUIT METAL GATE STRUCTURE AND METHOD OF FABRICATION
    7.
    发明申请
    INTEGRATED CIRCUIT METAL GATE STRUCTURE AND METHOD OF FABRICATION 有权
    集成电路金属结构和制造方法

    公开(公告)号：US20100044806A1

    公开(公告)日：2010-02-25

    申请号：US12264822

    申请日：2008-11-04

    申请人： Yong-Tian Hou ,  Chien-Hao Chen ,  Donald Y. Chao ,  Cheng-Lung Hung

    发明人： Yong-Tian Hou ,  Chien-Hao Chen ,  Donald Y. Chao ,  Cheng-Lung Hung

    IPC分类号： H01L29/78 ,  H01L21/3205

    CPC分类号： H01L29/4966 ,  H01L21/28088 ,  H01L21/28176 ,  H01L21/28229 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

    摘要： A method of forming a gate structure is provided. The method includes providing a metal layer in the gate structure, the metal layer includes an oxygen-gettering composition. The metal layer getters oxygen from the interface layer, which may decrease the thickness of the interface layer. The gettered oxygen converts the metal layer to a metal oxide, which may act as a gate dielectric for the gate structure. A multi-layer metal gate structure is also provided including a oxygen-gettering metal layer, an oxygen-containing metal layer, and a polysilicon interface metal layer overlying a high-k gate dielectric.

    摘要翻译： 提供一种形成栅极结构的方法。 该方法包括在栅极结构中提供金属层，金属层包括吸氧组合物。 金属层从界面层吸收氧气，这可能会降低界面层的厚度。 吸收的氧将金属层转化为金属氧化物，其可以用作栅极结构的栅极电介质。 还提供了多层金属栅极结构，其包括吸氧过程金属层，含氧金属层和覆盖在高k栅极电介质上的多晶硅界面金属层。

    Method of making MOSFET device with localized stressor
    10.
    发明授权
    Method of making MOSFET device with localized stressor 有权
    制造具有局部应力源的MOSFET器件的方法

    公开(公告)号：US07335544B2

    公开(公告)日：2008-02-26

    申请号：US11012413

    申请日：2004-12-15

    申请人： Chien-Hao Chen ,  Donald Y. Chao ,  Tze-Liang Lee ,  Shih-Chang Chen

    发明人： Chien-Hao Chen ,  Donald Y. Chao ,  Tze-Liang Lee ,  Shih-Chang Chen

    IPC分类号： H01L29/739

    CPC分类号： H01L29/7833 ,  H01L29/6659 ,  H01L29/7843

    摘要： A metal-oxide-semiconductor field-effect transistors (MOSFET) having localized stressors is provided. In accordance with embodiments of the present invention, a transistor comprises a high-stress film over the source/drain regions, but not over the gate electrode. The high-stress film may be a tensile-stress film for use with n-channel devices or a compressive-stress film for use with p-channel devices. A method of fabricating a MOSFET with localized stressors over the source/drain regions comprises forming a transistor having a gate electrode and source/drain regions, forming a high-stress film over the gate electrode and the source/drain regions, and thereafter removing the high-stress film located over the gate electrode, thereby leaving the high-stress film located over the source/drain regions. A contact-etch stop layer may be formed over the transistor.

    摘要翻译： 提供了具有局部应力源的金属氧化物半导体场效应晶体管（MOSFET）。 根据本发明的实施例，晶体管包括源/漏区上的高应力膜，但不在栅电极上。 高应力膜可以是用于n沟道器件的拉伸应力膜或用于p沟道器件的压应力膜。 在源极/漏极区域上制造具有局部应力源的MOSFET的方法包括形成具有栅电极和源极/漏极区的晶体管，在栅电极和源极/漏极区上形成高应力膜，然后除去 高应力膜位于栅电极之上，从而使高应力膜位于源极/漏极区之上。 接触蚀刻停止层可以形成在晶体管上。