High fill-factor avalanche photodiode
    1.
    发明授权
    High fill-factor avalanche photodiode 有权
    高填充因子雪崩光电二极管

    公开(公告)号:US08093624B1

    公开(公告)日:2012-01-10

    申请号:US11354799

    申请日:2006-02-15

    IPC分类号: H01L31/107

    CPC分类号: H01L31/107 H01L27/1446

    摘要: A photodiode is provided by the invention, including an n-type active region and a p-type active region. A first one of the n-type and p-type active regions is disposed in a semiconductor substrate at a first substrate surface. A second one of the n-type and p-type active regions includes a high-field zone disposed beneath the first one of the active regions at a first depth in the substrate, a mid-field zone disposed laterally outward of the first active region at a second depth in the substrate greater than the first depth, and a step zone connecting the high-field zone and the mid-field zone in the substrate.

    摘要翻译: 本发明提供一种光电二极管,包括n型有源区和p型有源区。 n型和p型有源区中的第一种被设置在第一衬底表面的半导体衬底中。 n型和p型有源区中的第二个包括设置在衬底中的第一深度处的第一有源区下面的高场区,设置在第一有源区的横向外侧的中场区 在大于第一深度的衬底中的第二深度处,以及连接衬底中的高场区和中场区的阶段区。

    CMOS READOUT ARCHITECTURE AND METHOD FOR PHOTON-COUNTING ARRAYS
    2.
    发明申请
    CMOS READOUT ARCHITECTURE AND METHOD FOR PHOTON-COUNTING ARRAYS 有权
    用于光电计数阵列的CMOS读出架构和方法

    公开(公告)号:US20110235771A1

    公开(公告)日:2011-09-29

    申请号:US12730048

    申请日:2010-03-23

    IPC分类号: H03K21/40 G01F15/06

    CPC分类号: H04N5/37455 H04N5/355

    摘要: Embodiments of the present invention include complementary metal-oxide-semiconductor (CMOS) readout architectures for photon-counting arrays with a photon-counting detector, a digital counter, and an overflow bit in each of the sensing elements in the array. Typically, the photon-counting detector is a Geiger-mode avalanche photodiode (APD) that emits brief pulses every time it detects a photon. The pulse increments the digital counters, which, in turn, sets the overflow bit once it reaches a given count. A rolling readout system operably coupled to each sensing element polls the overflow bit, and, if the overflow bit is high, initiates a data transfer from the overflow bit to a frame store. Compared to other photo-counting imagers, photon-counting imagers with counters and overflow bits operate with decreased transfer bandwidth, high dynamic range, and fine spatial resolution.

    摘要翻译: 本发明的实施例包括用于具有光子计数检测器的光子计数阵列的互补金属氧化物半导体(CMOS)读出结构,阵列中每个感测元件中的数字计数器和溢出位。 通常,光子计数检测器是Geiger模式雪崩光电二极管(APD),每次检测到光子时都会发出短脉冲。 脉冲递增数字计数器,一旦它达到给定的计数,这又会设置溢出位。 可操作地耦合到每个感测元件的滚动读出系统轮询溢出位,并且如果溢出位为高,则启动从溢出位到帧存储的数据传送。 与其他光计数成像仪相比,具有计数器和溢出位的光子计数成像器可以减少传输带宽,高动态范围和精细的空间分辨率。

    CMOS readout architecture and method for photon-counting arrays
    3.
    发明授权
    CMOS readout architecture and method for photon-counting arrays 有权
    CMOS读出架构和光子计数阵列的方法

    公开(公告)号:US08426797B2

    公开(公告)日:2013-04-23

    申请号:US12730048

    申请日:2010-03-23

    IPC分类号: H03K21/40

    CPC分类号: H04N5/37455 H04N5/355

    摘要: Embodiments of the present invention include complementary metal-oxide-semiconductor (CMOS) readout architectures for photon-counting arrays with a photon-counting detector, a digital counter, and an overflow bit in each of the sensing elements in the array. Typically, the photon-counting detector is a Geiger-mode avalanche photodiode (APD) that emits brief pulses every time it detects a photon. The pulse increments the digital counters, which, in turn, sets the overflow bit once it reaches a given count. A rolling readout system operably coupled to each sensing element polls the overflow bit, and, if the overflow bit is high, initiates a data transfer from the overflow bit to a frame store. Compared to other photo-counting imagers, photon-counting imagers with counters and overflow bits operate with decreased transfer bandwidth, high dynamic range, and fine spatial resolution.

    摘要翻译: 本发明的实施例包括用于具有光子计数检测器的光子计数阵列的互补金属氧化物半导体(CMOS)读出结构,阵列中每个感测元件中的数字计数器和溢出位。 通常,光子计数检测器是Geiger模式雪崩光电二极管(APD),每次检测到光子时都会发出短脉冲。 脉冲递增数字计数器,一旦它达到给定的计数,这又会设置溢出位。 可操作地耦合到每个感测元件的滚动读出系统轮询溢出位,并且如果溢出位为高,则启动从溢出位到帧存储的数据传送。 与其他光计数成像仪相比,具有计数器和溢出位的光子计数成像器可以减少传输带宽,高动态范围和精细的空间分辨率。