公开(公告)号：US20130196474A1

公开(公告)日：2013-08-01

申请号：US13814343

申请日：2011-08-04

申请人： Matthew Meitl ,  Christopher Bower ,  Etienne Menard ,  James Carter ,  Allen Gray ,  Salvatore Bonafede

发明人： Matthew Meitl ,  Christopher Bower ,  Etienne Menard ,  James Carter ,  Allen Gray ,  Salvatore Bonafede

IPC分类号： H01L21/306

CPC分类号： H01L21/306 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02664 ,  H01L21/30612 ,  H01L21/7813 ,  H01L23/053 ,  H01L23/28 ,  H01L31/02168 ,  H01L31/048 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1892 ,  H01L2924/0002 ,  Y02E10/544 ,  H01L2924/00

摘要： A method of fabricating transferable semiconductor devices includes providing a release layer including indium aluminum phosphide on a substrate, and providing a support layer on the release layer. The support layer and the substrate include respective materials, such as arsenide-based materials, such that the release layer has an etching selectivity relative to the support layer and the substrate. At least one device layer is provided on the support layer. The release layer is selectively etched without substantially etching the support layer and the substrate. Related structures and methods are also discussed.

摘要翻译： 制造可转移半导体器件的方法包括在衬底上提供包括磷化铝铟的释放层，并在释放层上提供支撑层。 支撑层和基板包括各种材料，例如基于砷化物的材料，使得剥离层相对于支撑层和基底具有蚀刻选择性。 在支撑层上提供至少一个器件层。 选择性地蚀刻释放层，而基本上不蚀刻支撑层和基底。 还讨论了相关的结构和方法。

公开(公告)号：US09355854B2

公开(公告)日：2016-05-31

申请号：US13814343

申请日：2011-08-04

申请人： Matthew Meitl ,  Christopher Bower ,  Etienne Menard ,  James Carter ,  Allen Gray ,  Salvatore Bonafede

发明人： Matthew Meitl ,  Christopher Bower ,  Etienne Menard ,  James Carter ,  Allen Gray ,  Salvatore Bonafede

IPC分类号： H01L21/82 ,  H01L21/306 ,  H01L31/18 ,  H01L23/28 ,  H01L31/0216 ,  H01L31/048 ,  H01L23/053 ,  H01L21/02 ,  H01L21/78

CPC分类号： H01L21/306 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02664 ,  H01L21/30612 ,  H01L21/7813 ,  H01L23/053 ,  H01L23/28 ,  H01L31/02168 ,  H01L31/048 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1892 ,  H01L2924/0002 ,  Y02E10/544 ,  H01L2924/00

摘要： A method of fabricating transferable semiconductor devices includes providing a release layer including indium aluminum phosphide on a substrate, and providing a support layer on the release layer. The support layer and the substrate include respective materials, such as arsenide-based materials, such that the release layer has an etching selectivity relative to the support layer and the substrate. At least one device layer is provided on the support layer. The release layer is selectively etched without substantially etching the support layer and the substrate. Related structures and methods are also discussed.

摘要翻译： 制造可转移半导体器件的方法包括在衬底上提供包括磷化铝铟的释放层，并在释放层上提供支撑层。 支撑层和基板包括各种材料，例如基于砷化物的材料，使得剥离层相对于支撑层和基底具有蚀刻选择性。 在支撑层上提供至少一个器件层。 选择性地蚀刻释放层，而基本上不蚀刻支撑层和基底。 还讨论了相关的结构和方法。