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1.发明授权Method and system for advanced process control in an etch system by gas flow control on the basis of CD measurements 有权基于CD测量的气流控制在蚀刻系统中进行先进过程控制的方法和系统公开(公告)号：US08888947B2
公开(公告)日：2014-11-18
申请号：US12718037
申请日：2010-03-05
申请人： Matthias Schaller , Uwe Schulze , Mathias Baranyai
发明人： Matthias Schaller , Uwe Schulze , Mathias Baranyai
IPC分类号： C23F1/00
CPC分类号： H01L21/76808 , H01L22/20 , H01L2924/0002 , Y10T156/1168 , H01L2924/00
摘要： By controlling the flow rate of one or more gaseous components of an etch ambient during the formation of metal lines and vias on the basis of feedback measurement data from critical dimensions, process variations may be reduced, thereby enhancing performance and reliability of the respective metallization structure.
摘要翻译： 通过在基于关键尺寸的反馈测量数据的基础上控制在形成金属线和通孔期间蚀刻环境的一个或多个气体组分的流量，可以减少工艺变化，从而提高各个金属化结构的性能和可靠性 。
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2.发明授权Method and system for advanced process control in an etch system by gas flow control on the basis of CD measurements 有权基于CD测量的气流控制在蚀刻系统中进行先进过程控制的方法和系统公开(公告)号：US07704889B2
公开(公告)日：2010-04-27
申请号：US11538860
申请日：2006-10-05
申请人： Matthias Schaller , Uwe Schulze , Mathias Baranyai
发明人： Matthias Schaller , Uwe Schulze , Mathias Baranyai
IPC分类号： H01L21/302
CPC分类号： H01L21/76808 , H01L22/20 , H01L2924/0002 , Y10T156/1168 , H01L2924/00
摘要： By controlling the flow rate of one or more gaseous components of an etch ambient during the formation of metal lines and vias on the basis of feedback measurement data from critical dimensions, process variations may be reduced, thereby enhancing performance and reliability of the respective metallization structure.
摘要翻译： 通过在基于关键尺寸的反馈测量数据的基础上控制在形成金属线和通孔期间蚀刻环境的一个或多个气体组分的流量，可以减少工艺变化，从而提高各个金属化结构的性能和可靠性 。
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3.发明申请METHOD AND SYSTEM FOR ADVANCED PROCESS CONTROL IN AN ETCH SYSTEM BY GAS FLOW CONTROL ON THE BASIS OF CD MEASUREMENTS 有权基于CD测量的气体流量控制在ET系统中的先进过程控制方法与系统公开(公告)号：US20070178699A1
公开(公告)日：2007-08-02
申请号：US11538860
申请日：2006-10-05
申请人： Matthias Schaller , Uwe Schulze , Mathias Baranyai
发明人： Matthias Schaller , Uwe Schulze , Mathias Baranyai
IPC分类号： H01L21/302
CPC分类号： H01L21/76808 , H01L22/20 , H01L2924/0002 , Y10T156/1168 , H01L2924/00
摘要： By controlling the flow rate of one or more gaseous components of an etch ambient during the formation of metal lines and vias on the basis of feedback measurement data from critical dimensions, process variations may be reduced, thereby enhancing performance and reliability of the respective metallization structure.
摘要翻译： 通过在基于关键尺寸的反馈测量数据的基础上控制在形成金属线和通孔期间蚀刻环境的一个或多个气体组分的流量，可以减少工艺变化，从而提高各个金属化结构的性能和可靠性 。
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