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    Power-driven screwdriver
    1.
    发明授权
    Power-driven screwdriver 失效
    电动螺丝刀

    公开(公告)号：US4404877A

    公开(公告)日：1983-09-20

    申请号：US309975

    申请日：1981-10-09

    申请人： Megumi Mizuno ,  Shigeru Ishikawa ,  Eiki Kubo

    发明人： Megumi Mizuno ,  Shigeru Ishikawa ,  Eiki Kubo

    IPC分类号： B25B23/04

    CPC分类号： B25B23/045

    摘要： A power-driven screwdriver for use with a motor-driven tool for driving a strip of screws one at a time into a workpiece and having an outer guide frame in which a slide block and a slide plate are slidably mounted. A screw indexing lever is angularly movably mounted on the slide block and has a pin received in a first cam slot having an oblique portion and defined in the outer guide frame and a second cam slot defined in the slide plate. When the motor-driven tool is pushed toward a workpiece, the slide block and the slide plate are slid into the outer guide frame, allowing a screwdriver bit to engage and drive a screw into the workpiece. After the screw has been driven, the motor-driven tool is retracted away from the workpiece, whereupon the slide block and the slide plate are forced to slide out of the outer guide frame under the bias of a spring around the screwdriver bit. As the pin on the screw indexing lever enters the oblique portion of the first cam, the screw indexing lever is caused to turn feeding a next screw to a position aligned with the screwdriver bit.

    摘要翻译： 一种用于电动驱动工具的动力驱动螺丝刀，用于一次一个地将一根螺丝带驱动到工件中，并具有滑动块和滑动板可滑动地安装在其中的外部引导框架。 螺杆分度杆可角度地可移动地安装在滑块上，并且具有容纳在具有倾斜部分并限定在外引导框架中的第一凸轮槽中的销和限定在滑板中的第二凸轮槽。 当电动工具被推向工件时，滑块和滑板滑入外引导架，从而使螺丝刀接合并将螺丝驱动到工件中。 在螺杆被驱动之后，马达驱动的工具从工件中退回，于是滑块和滑板被弹簧围绕螺丝起子位的偏压力从外导向架滑出。 当螺钉分度杆上的销钉进入第一凸轮的倾斜部分时，使螺杆分度杆将下一个螺丝转动到与螺丝起子位置对准的位置。

    SEMICONDUCTOR APPARATUS
    2.
    发明申请
    SEMICONDUCTOR APPARATUS 有权

    公开(公告)号：US20080036088A1

    公开(公告)日：2008-02-14

    申请号：US11834734

    申请日：2007-08-07

    申请人： Chikara Nakajima ,  Takeshi Kurosawa ,  Megumi Mizuno

    发明人： Chikara Nakajima ,  Takeshi Kurosawa ,  Megumi Mizuno

    IPC分类号： H01L23/48

    CPC分类号： H01L23/24 ,  H01L23/051 ,  H01L23/4827 ,  H01L24/01 ,  H01L24/32 ,  H01L24/33 ,  H01L2224/29111 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： The present invention provides a semiconductor apparatus having the improved thermal fatigue life against temperature change by lowering the maximum temperature on a jointing member existing between a semiconductor element and an electrode terminal and reducing the range of the temperature change. The semiconductor apparatus has a jointing member placed in between a semiconductor chip and a lead electrode to make the jointing member joint the semiconductor chip with the lead electrode; has a thermal stress relaxation body arranged between the semiconductor chip and a support electrode; has jointing members respectively placed between the thermal stress relaxation body and the semiconductor chip and between the thermal stress relaxation body and the support electrode, and makes the first thermal stress relaxation body connected to the support electrode; wherein the second thermal stress relaxation body is made from a material which has a thermal expansion coefficient in between the coefficients of the semiconductor chip and the lead electrode, and the first thermal stress relaxation body is made from a material which has a thermal expansion coefficient in between the coefficients of the semiconductor chip and the support electrode, and has a thermal conductivity of 50 to 300 W/(m·° C.).

    摘要翻译： 本发明提供一种通过降低存在于半导体元件和电极端子之间的接合构件上的最大温度并降低温度变化的范围而具有改善的耐温度变化的热疲劳寿命的半导体装置。 半导体装置具有放置在半导体芯片和引线电极之间的接合构件，以使接合构件将半导体芯片与引线电极接合; 具有布置在半导体芯片和支撑电极之间的热应力松弛体; 具有分别放置在热应力松弛体和半导体芯片之间以及热应力松弛体和支撑电极之间的接合构件，并使第一热应力松弛体与支撑电极连接; 其中所述第二热应力松弛体由半导体芯片和所述引线电极的系数之间的热膨胀系数的材料制成，并且所述第一热应力松弛体由具有热膨胀系数的材料制成 在半导体芯片和支撑电极的系数之间，并且具有50至300W /（m·℃）的热导率。